ON MC74VHC157DTR2 Quad 2--channel multiplexer Datasheet

MC74VHC157
Quad 2-- Channel Multiplexer
The MC74VHC157 is an advanced high--speed CMOS quad
2--channel multiplexer, fabricated with silicon gate CMOS
technology. It achieves high--speed operation similar to equivalent
Bipolar--Schottky TTL, while maintaining CMOS low--power
dissipation.
It consists of four 2--input digital multiplexers with common select
(S) and enable (E) inputs. When E is held High, selection of data is
inhibited and all the outputs go Low.
The select decoding determines whether the A or B inputs get routed
to the corresponding Y outputs.
The internal circuit is composed of three stages, including a buffer
output which provides high noise immunity and stable output. The
inputs tolerate voltages up to 7 V, allowing the interface of 5 V systems
to 3 V systems.
•
•
•
•
•
•
•
•
•
•
•
•
High Speed: tPD = 4.1 ns (Typ) at VCC = 5 V
Low Power Dissipation: ICC = 4 mA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2 V to 5.5 V Operating Range
Low Noise: VOLP = 0.8 V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V; Machine Model > 200 V
Chip Complexity: 82 FETs
These devices are available in Pb--free package(s). Specifications herein
apply to both standard and Pb--free devices. Please see our website at
www.onsemi.com for specific Pb--free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
S
1
16
VCC
A0
2
15
E
B0
3
14
A3
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MARKING
DIAGRAMS
16
SOIC--16
D SUFFIX
CASE 751B
8
9
VHC
157
ALYW
TSSOP--16
DT SUFFIX
CASE 948F
1
8
16
SOIC EIAJ--16
M SUFFIX
CASE 966
A
L, WL
Y, YY
W, WW
9
74VHC157
ALYW
1
8
= Assembly Location
= Wafer Lot
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MC74VHC157D
SOIC--16
48 Units/Rail
MC74VHC157DR2
SOIC--16
2500 Units/Reel
TSSOP--16
96 Units/Rail
4
13
B3
A1
5
12
Y3
B1
6
11
A2
MC74VHC157DT
Y1
7
10
B2
GND
8
9
MC74VHC157DTR2 TSSOP--16 2500 Units/Reel
Y2
Figure 1. Pin Assignment
March, 2006 -- Rev. 5
1
16
Y0
© Semiconductor Components Industries, LLC, 2006
9
VHC157
AWLYYWW
1
MC74VHC157M
SOIC
EIAJ--16
50 Units/Rail
MC74VHC157MEL
SOIC
EIAJ--16
2000 Units/Reel
Publication Order Number:
MC74VHC157/D
MC74VHC157
A0
B0
A1
B1
NIBBLE
INPUTS
A2
B2
A3
B3
E
S
2
4
3
Y0
5
7
6
Y1
DATA
OUTPUTS
11
9
10
Y2
14
12 Y3
13
15
1
Figure 2. Expanded Logic Diagram
E
S
A0
B0
A1
B1
15
1
EN
G1
2
3
5
6
1
1
MUX
4
7
11
A2
10
B2
14
A3
13
B3
9
12
Figure 3. IEC Logic Symbol
FUNCTION TABLE
Inputs
Outputs
E
S
Y0 -- Y3
H
L
L
X
L
H
L
A0--A3
B0--B3
A0 -- A3, B0 -- B3 = the levels
of the respective Data--Word
Inputs.
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2
Y0
Y1
Y2
Y3
MC74VHC157
MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Value
Unit
−0.5 to +7.0
V
VCC
DC Supply Voltage
VI
DC Input Voltage
−0.5 to VCC +7.0
V
VO
DC Output Voltage
−0.5 to VCC +7.0
V
IIK
DC Input Diode Current
VI < GND
−20
mA
IOK
DC Output Diode Current
VO < GND
±20
mA
IO
DC Output Sink Current
±25
mA
ICC
DC Supply Current per Supply Pin
±100
mA
TSTG
Storage Temperature Range
−65 to +150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
TJ
Junction Temperature under Bias
θJA
Thermal Resistance
PD
Power Dissipation in Still Air at 85_C
MSL
Moisture Sensitivity
FR
Flammability Rating
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
>2000
>200
N/A
V
ILatch--Up
Latch--Up Performance
Above VCC and Below GND at 85_C (Note 5)
±500
mA
260
_C
+150
_C
250
_C/W
250
mW
Level 1
Oxygen Index: 30% -- 35%
UL--94--VO (0.125 in)
1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to these
conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum--rated
conditions is not implied.
2. Tested to EIA/JESD22--A114--A.
3. Tested to EIA/JESD22--A115--A.
4. Tested to JESD22--C101--A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
VCC
DC Supply Voltage
VIN
DC Input Voltage
VOUT
DC Output Voltage
TA
Operating Temperature Range, all Package Types
tr, tf
Input Rise or Fall Time
(Note 6)
VCC = 3.3 V ± 0.3 V
VCC = 5.0 V ± 0.5 V
Min
Max
Unit
2.0
5.5
V
0
5.5
V
0
VCC
V
−55
125
_C
0
0
100
20
ns/V
6. Unused inputs may not be left open. All inputs must be tied to a high--logic voltage level or a low--logic input voltage level.
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80_C
117.8
TJ = 90_C
1,032,200
TJ = 100_C
80
TJ = 110_C
Time, Years
TJ = 120_C
Time, Hours
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 130_C
Junction
Temperature _C
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
1
1
10
100
1000
TIME, YEARS
Figure 4. Failure Rate vs. Time Junction Temperature
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3
MC74VHC157
DC CHARACTERISTICS (Voltages Referenced to GND)
VCC
Symbol
Parameter
Condition
TA = 25_C
(V)
Min
1.5
0.7 VCC
VIH
High--Level
Input Voltage
2.0
3.0 to 5.5
VIL
Low--Level
Input Voltage
2.0
3.0 to 5.5
VOH
High--Level
Output Voltage
VOL
Low--Level
Output Voltage
TA ≤85_C
Typ
Max
Min
2.0
3.0
4.5
1.9
2.9
4.4
VIN = VIH or VIL
IOH = --4 mA
IOH = --8 mA
3.0
4.5
2.58
3.94
VIN = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
VIN = VIH or VIL
IOH = 4 mA
IOH = 8 mA
Min
1.5
0.7 VCC
0.5
0.3 VCC
VIN = VIH or VIL
IOH = --50 mA
--55_C ≤TA≤125_C
Max
2.0
3.0
4.5
0.0
0.0
0.0
Max
1.5
0.7 VCC
0.5
0.3 VCC
V
0.5
0.3 VCC
1.9
2.9
4.4
1.9
2.9
4.4
2.48
3.8
2.34
3.66
Unit
V
V
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
IIN
Input Leakage
Current
VIN = 5.5 V or
GND
0 to 5.5
±0.1
±1.0
±1.0
mA
ICC
Quiescent
Supply Current
VIN = VCC or
GND
5.5
4.0
40.0
40.0
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
TA = 25_C
Symbol
tPLH,
tPHL
tPLH,
tPHL
tPLH,
tPHL
CIN
Characteristic
Propagation Delay,
A to B to Y
Propagation Delay,
S to Y
Propagation Delay,
E to Y
Test Conditions
Min
TA ≤85_C
--55_C ≤TA≤125_C
Typ
Max
Typ
Max
Typ
Max
Unit
ns
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
6.2
8.7
9.7
13.2
1.0
1.0
11.5
15.0
1.0
1.0
11.5
15.0
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
4.1
5.6
6.4
8.4
1.0
1.0
7.5
9.5
1.0
1.0
7.5
9.5
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
8.4
10.9
13.2
16.7
1.0
1.0
15.5
19.0
1.0
1.0
15.5
19.0
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
5.3
6.8
8.1
10.1
1.0
1.0
9.5
11.5
1.0
1.0
9.5
11.5
VCC = 3.3 ± 0.3 V
CL = 15 pF
CL = 50 pF
8.7
11.2
13.6
17.1
1.0
1.0
16.0
19.5
1.0
1.0
16.0
19.5
VCC = 5.0 ± 0.5 V
CL = 15 pF
CL = 50 pF
5.6
7.1
8.6
10.6
1.0
1.0
10.0
12.0
1.0
1.0
10.0
12.0
4
10
Input Capacitance
10
10
ns
ns
pF
Typical @ 25_C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Note 7)
20
pF
7. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD ¯ VCC ¯ fin + ICC. CPD is used to determine the no--load dynamic
power consumption: PD = CPD ¯ VCC2 ¯ fin + ICC ¯ VCC.
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4
MC74VHC157
NOISE CHARACTERISTICS (Input tr = tf = 3.0 ns; CL = 50 pF; VCC = 5.0 V)
TA = 25_C
Characteristic
Symbol
Typ
Max
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
−0.3
−0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
VCC
A, B, or S
50%
tPLH
Y
VCC
E
50%
GND
tPHL
GND
tPLH
50% VCC
50% VCC
Y
Figure 5. Switching Waveform
tPHL
Figure 6. Inverting Switching
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance.
Figure 7. Test Circuit
INPUT
Figure 8. Input Equivalent Circuit
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5
MC74VHC157
PACKAGE DIMENSIONS
SOIC--16
D SUFFIX
CASE 751B--05
ISSUE J
--A-16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
9
--B-1
P
8 PL
0.25 (0.010)
8
M
B
S
G
R
K
DIM
A
B
C
D
F
G
J
K
M
P
R
F
X 45 _
C
--T--
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
0.10 (0.004)
M
T U
V
S
S
S
K
K1
2X
L/2
16
9
J1
B
--U--
L
SECTION N--N
J
PIN 1
IDENT.
8
1
N
0.15 (0.006) T U
S
0.25 (0.010)
A
--V--
M
N
F
DETAIL E
--W--
C
0.10 (0.004)
--T-- SEATING
PLANE
D
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
TSSOP
DT SUFFIX
CASE 948F--01
ISSUE O
16X K REF
0.15 (0.006) T U
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
G
H
DETAIL E
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6
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH.
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE --W--.
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
-----1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.18
0.28
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193
0.200
0.169
0.177
-----0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.007
0.011
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
MC74VHC157
PACKAGE DIMENSIONS
SOIC EIAJ--16
M SUFFIX
CASE 966--01
ISSUE O
16
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH OR PROTRUSIONS AND ARE MEASURED
AT THE PARTING LINE. MOLD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
LE
9
Q1
E HE
1
M_
L
8
Z
DETAIL P
D
e
VIEW P
A
A1
b
0.13 (0.005)
c
M
0.10 (0.004)
DIM
A
A1
b
c
D
E
e
HE
L
LE
M
Q1
Z
MILLIMETERS
MIN
MAX
-----2.05
0.05
0.20
0.35
0.50
0.18
0.27
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
-----0.78
INCHES
MIN
MAX
-----0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
-----0.031
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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