Diodes LMN200B02 200 ma load switch featuring pre-biased pnp transistor and n-mosfet with gate pull down resistor Datasheet

LMN200B02
Lead-free Green
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH GATE PULL DOWN RESISTOR
NEW PRODUCT
General Description
•
LMN200B02 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators etc. particularly at a point
of load. It features a discrete pass transistor with stable
VCE(SAT) which does not depend on the input voltage and
can support continuous maximum current of 200 mA . It
also contains a discrete N-MOSFET that can be used as
control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part
of a circuit or as a stand alone discrete device.
6
5
4
1
2
3
Features
•
•
•
•
•
•
Fig. 1: SOT-363
Voltage Controlled Small Signal Switch
N-MOSFET with Gate Pull-Down Resistor
Surface Mount Package
Ideally Suited for Automated Assembly Processes
•
•
•
•
•
•
B_Q1
S_Q2
6
5
4
Lead Free By Design/ROHS Compliant (Note 1)
"Green" Device (Note 2)
C
DDTB142JU_DIE
Mechanical Data
•
•
C_Q1
Q1
B
PNP
Case: SOT-363
R2
R3
470
37K
E
R1
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
S
G
10K
Q2
NMOS
DSNM6047_DIE D
Moisture sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
1
2
3
E_Q1
G_Q2
D_Q2
Marking & Type Code Information: See Last Page
Fig. 2 Schematic and Pin Configuration
Ordering Information: See Last Page
Weight: 0.016 grams (approximate)
Refere
nce
Device Type
R1 (NOM)
R2 (NOM)
R3
(NOM)
Figure
DDTB142JU_DIE
Q1
PNP Transistor
10K
470

2
DSNM6047_DIE (with Gate
Pull-Down Resistor)
Q2
N-MOSFET


37K
2
Sub-Component P/N
Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Pd
200
mW
Power Derating Factor above 125°C
Pder
1.6
mW/°C
Output Current
Iout
200
mA
Symbol
Value
Unit
Tj,Tstg
-55 to +150
°C
RθJA
625
°C/W
Power Dissipation (Note 3)
Unit
Thermal Characteristics
Characteristic
Junction Operation and Storage Temperature Range
Thermal Resistance, Junction to Ambient Air (Equivalent to
One Heated Junction of PNP Transistor)
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS30658 Rev. 4 - 2
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LMN200B02
 Diodes Incorporated
NEW PRODUCT
Maximum Ratings:
Sub-Component Device: Pre-Biased PNP Transistor (Q1)
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Supply Voltage
Vcc
-50
V
Input Voltage
Vin
+5 to -6
V
Output Current
IC
-200
mA
Sub-Component Device: N-MOSFET With Gate
Pull-Down Resistor (Q2)
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Drain-Source Voltage
VDSS
60
V
Drain Gate Voltage (RGS ≤1MOhm)
VDGR
60
V
Gate-Source Voltage
Continuous
VGSS
Pulsed (tp<50 uS)
Drain Current (Page 1: Note 3)
Continuous (Vgs = 10V)
Pulsed (tp <10 uS, Duty Cycle <1%)
Continuous Source Current
DS30658 Rev. 4 - 2
ID
IS
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+/-20
+/-40
115
800
115
V
mA
mA
LMN200B02
NEW PRODUCT
Electrical Characteristics: Pre-Biased PNP Transistor (Q1)
Characteristic
@ TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Cut Off Current
ICBO


-100
nA
VCB = -50V, IE = 0
Collector-Emitter Cut Off Current
ICEO


-500
nA
VCE = -50V, IB = 0
OFF CHARACTERISTICS
IEBO

-0.5
-1
mA
VEB = -5V, IC = 0
Collector-Base Breakdown Voltage
V(BR)CBO
-50


V
IC = -10 uA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-50


V
IC = -2 mA, IB = 0
VI(OFF)

-0.55
-0.3
V
VCE = -5V, IC = -100uA
VOH
-4.9


V
VCC = -5V, VB = -0.05V,
RL = 1K
IO(OFF)


-500
nA
VCC = -50V, VI = 0V


-0.15
V
IC = -10 mA, IB = -0.5 mA


-0.2
V
IC = -50mA, IB = -5mA


-0.2
V
IC = -20mA, IB = -1mA


-0.25
V
IC = -100mA, IB= -10mA


-0.25
V
IC = -200mA, IB= -10mA


-0.3
V
IC = -200mA, IB = -20mA
Emitter-Base Cut Off Current
Input Off Voltage
Output Voltage
Ouput Current (leakage current same as ICEO)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
Equivalent on-resistance*
DC Current Gain
Input On Voltage
Output Voltage (equivalent to VCE(SAT) or VO(ON) )
Input Current
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
VCE(SAT)


1.5
Ω
IC = -200mA, IB = -10mA
60
150


VCE = -5V, IC = -20 mA
60
215


VCE = -5V, IC = -50 mA
60
245


VCE = -5V, IC = -100 mA
60
250


VCE = -5V, IC = -200 mA
VI(ON)
-2.45
-0.7

V
VO = -0.3V, IC = -2 mA
VOL

-0.065
-0.15
V
VCC = -5V, VB = -2.5V,
Io/II = -50mA /-2.5mA
Ii

-9.2
-28
mA
VBE(ON)

-1.125
-1.3
V

-3.2
-3.6
RCE(SAT)
hFE
VBE(SAT)
V
VI = -5V
VCE = -5V, IC = 200mA
IC = -50mA, IB = -5mA

-4.55
-5.5
Input Resistor (Base), +/- 30%
R2

0.47

KΩ

Pull-up Resistor (Base to Vcc supply), +/- 30%
R1

10

KΩ

R1/R2

21



Transition Frequency (gain bandwidth product)
fT

200

Collector capacitance, (Ccbo-Output
Capacitance)
CC

20

Resistor Ratio (Input Resistor/Pull-up
resistor) +/- 20%
IC = -80mA, IB = -8mA
SMALL SIGNAL CHARACTERISTICS
CE = -10V, IE = -5mA,
MHz V
f = 100MHz
pF
VCB = -10V, IE = 0A,
f = 1MHz
* Pulse Test: Pulse width, tp<300 µS, Duty Cycle, d<=0.02
DS30658 Rev. 4 - 2
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LMN200B02
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
V(BR)DSS
60


V
VGS = 0V, ID = 10µA
IDSS


1
µA
VGS =0V, VDS = 60V
Gate-Body Leakage Current, Forward
IGSSF


0.95
mA
VGS = 20V, VDS = 0V
Gate-Body Leakage Current, Reverse
IGSSR


-0.95
mΑ
VGS = -20V, VDS = 0V
Gate Source Threshold Voltage (Control Supply
Voltage)
VGS(th)
1
1.86
2.2
V
Static Drain-Source On-State Voltage
VDS(on)

0.08
1.5

0.15
3.75
500



1.55
3

1.4
2
80
240

80
350

OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage, BVDSS
Zero Gate Voltage Drain Current (Drain Leakage
Current)
ON CHARACTERISTICS (Note 4)
ID(on)
On-State Drain Current
RDS(on)
Static Drain-Source On Resistance
V
mA
Ω
VDS = VGS, ID = 0.25mA
VGS = 5V, ID = 50mA
VGS = 10V, ID = 115mA
VGS = 10V,
VDS ≥2XVDS(ON)
VGS = 5V, ID = 50mA
VGS = 10V, ID = 500mA
VDS ≥2XVDS(ON), ID = 115 mA
Forward Transconductance
gFS
Gate Pull-Down Resistor, +/- 30%
R3

37

ΚΩ
Input Capacitance
Ciss


50
pF
Output Capacitance
Coss


25
pF
Reverse Transfer Capacitance
Crss


5
pF
Turn-On Delay Time
td(on)


20
ns
Turn-Off Delay Time
td(off)


40
ns
VDD = 30V, VGS =10V,
ID = 200mA,
RG = 25 Ohm, RL = 150 Ohm
VGS = 0V, IS = 115 mA*
mS
VDS ≥2XVDS(ON), ID = 200 mA

DYNAMIC CHARACTERISTICS
VDS = -25V, VGS = 0V,
ƒ= 1MHz
SWITCHING CHARACTERISTICS*
SOURCE-DRAIN (BODY) DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward On-Voltage
Maximum Continuous Drain-Source Diode Forward
Current (Reverse Drain Current)
Maximum Pulsed Drain-Source Diode Forward
Current
VSD

0.88
1.5
V
IS


115
mA

ISM


800
mA

* Pulse Test: Pulse width, tp<300 µS, Duty Cycle, d<=0.02
Notes: 4. Short duration test pulse used to minimize self-heating effect.
Typical Characteristics
350
300
PD, POWER DISSIPATION (mW)
NEW PRODUCT
Electrical Characteristics:
N-MOSFET with Gate Pull-Down Resistor (Q2) @ TA = 25°C unless otherwise specified
250
200
150
100
50
0
0
25
50
75
100
125
150
175
TA, AMBIENT TEMPERATURE (°C)
Fig. 3, Max Power Dissipation vs
Ambient Temperature (Total Device)
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LMN200B02
0.6
0.4
IC/IB = 20
VCE(SAT), COLLECTOR VOLTAGE (V)
VCE(SAT), COLLECTOR VOLTAGE (V)
IC/IB = 10
TA = 125°C
0.3
TA = 150°C
0.2
TA = -55°C
0.1
TA = 85°C
TA = 25°C
0
0.5
0.4
0.3
TA = 125°C
0.2
TA =-55°C
TA = 150°C
TA = 25°C
0.1
TA = 85°C
0
0.01
1
0.1
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Fig. 5 VCE(SAT) vs. IC
IC, COLLECTOR CURRENT (A)
Fig. 4 VCE(SAT) vs. IC
30
3
TA = 85°C
IC/IB = 10
VBE(ON), BASE EMITTER VOLTAGE (V)
VBE(SAT), BASE EMITTER VOLTAGE (V)
TA = 25°C
25
TA = 150°C
TA = 125°C
20
15
TA = -55°C
10
5
IC/IB = 10
VCE = 5V
2.5
2
TA = -55°C
1.5
TA = 25°C
1
0.5
TA = 150°C
TA = 85°C
TA = 125°C
0
0
1
10
100
1
1000
10
IC, COLLECTOR CURRENT (mA)
Fig. 6 VBE(SAT) vs. IC
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 7 VBE(ON) vs. IC
VCE = 5V
TA = 150°C
400
hFE, DC CURRENT GAIN
NEW PRODUCT
Typical Pre-Biased PNP Transistor (Q1) Characteristics
TA = 125°C
300
TA = 85°C
TA = 25°C
200
100
TA = -55°C
0
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 8 hFE vs. IC
DS30658 Rev. 4 - 2
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LMN200B02
Typical N-Channel MOSFET (Q2) Characteristics
1.4
1.8
VDS = 10V
1.2
VGS = 8V
1.4
VGS = 6V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TA =-55°C
VGS = 10V
1.6
1.2
VGS = 5V
1.0
0.8
VGS = 4V
0.6
TA = 25°C
TA = 125°C
1
TA = 85°C
0.8
0.6
TA = 150°C
0.4
0.4
0.2
0.2
VGS = 3V
0
0
1
0
2
4
3
5
6
0
7
5
4
3
2
1
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 10 Transfer Characteristics
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Output Characteristics
2
1.8
1.6
1.4
1.2
0
-75
-50 -25
0
25
50
75
VGS=5V
Pulsed
5
VDS = 10V
VDS = VGS
ID = 0.25mA
Pulsed
RDS(ON), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (W)
VGS(th), GATE THRESHOLD VOLTAGE (V)
2.2
4
TA = 125°C
TA = 150°C
3
TA = 85°C
2
TA = 25°C
TA = -55°C
1
0
100 125 150
0.1
0.01
ID, DRAIN CURRENT (A)
Fig. 12 Static Drain-Source On-Resistance
vs. Drain Current
0.001
TJ, JUNCTION TEMPERATURE (°C)
Fig. 11 Gate Threshold Voltage
vs. Junction Temperature
1
7
4
RDS(ON), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (W)
VGS = 10V
Pulsed
RDS(ON), STATIC DRAIN-SOURCE
ON-STATE RESISTANCE (W)
NEW PRODUCT
TA = 25°C
3
TA = 125°C
2
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
1
TA = 25°C
Pulsed
6
5
4
ID = 115mA
3
2
ID = 50mA
1
0
0
0.01
0.001
1
0.1
ID, DRAIN CURRENT (A)
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
DS30658 Rev. 4 - 2
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0
2
4
6
8
10
12
14
16
18
20
VGS, GATE SOURCE VOLTAGE (V)
Fig. 14 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
LMN200B02
1
VGS = 10V
Pulsed
ID = 115mA
2
ID = 50mA
1.5
1
IS, REVERSE DRAIN CURRENT (A)
NEW PRODUCT
2.5
TA = 125°C
TA = 25°C
0.1
TA = 150°C
TA = 85°C
TA = -55°C
0.01
VGS = 5V
Pulsed
0.001
0.5
-75 -50
-25
0
25
50
75
100 125 150
gFS, FORWARD TRANSCONDUCTANCE (mS)
IS, REVERSE DRAIN CURRENT (A)
VGS = 10V
VGS = 5V
TA= 25°C
Pulsed
0.1
0.01
0.001
0
0.5
1
1.5
2
2.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
Fig. 17 Reverse Drain Current
vs. Body Diode Forward Voltage
DS30658 Rev. 4 - 2
3
5
4
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 16 Reverse Drain Current
vs. Source-Drain Voltage
Tj, JUNCTION TEMPERATURE (°C)
Fig. 15 Static Drain-Source On-State Resistance
vs. Junction Temperature
1
2
1
0
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900
800
TA = -55°C
TA = 25°C
700
600
TA = 85°C
500
400
TA = 125°C
TA = 150°C
300
200
100
0
0
0.2
0.4
0.8
0.6
ID, DRAIN CURRENT (A)
Fig. 18 Forward Transfer Conductance
vs. Drain Current (VDS > ID *RDS(ON))
LMN200B02
 Diodes Incorporated
NEW PRODUCT
Application Details:
•
PNP Transistor (DDTB142JU) and N-MOSFET
(DSNM6047) with gate pull-down resistor integrated
as one in LMN200B02 can be used as a discrete
entity for general purpose applications or as an
integrated circuit to function as a Load Switch. When
it is used as the latter as shown in Fig 19, various
input voltage sources can be used as long as it does
not exceed the maximum ratings of the device.
These devices are designed to deliver continuous
output load current up to a maximum of 200 mA. The
MOSFET Switch draws no current, hence loading of
control circuit is prevented. Care must be taken for
higher levels of dissipation while designing for higher
load conditions. These devices provide high power
and also consume less space. The product mainly
helps in optimizing power usage, thereby conserving
battery life in a controlled load system like portable
battery powered applications. (Please see Fig. 20
for one example of a typical application circuit used
in conjunction with voltage regulator as a part of a
power management system)
DDTB142JU
Vin
E
Vout
C
Q1
PNP
B
R1
10K
LOAD
R2
470
DSNM6047
D
S
NMOS
Q2
G
Control
R3
37K
Fig. 19 Circuit Diagram
Typical Application Circuit
5v Supply
U1
U2
Load Switch
Vin
U3
Control Logic
Circuit (PIC,
Comparator
etc)
GND
Vin
OUT1
1
Control 2
3
E_Q1
C_Q1
G_Q2
B_Q1
D_Q2
S_Q2
LNM200B02
6 Vout
Point of
Load
IN
OUT
5
4 Gnd
Voltage Regulator
Diodes Inc.
Fig. 20
DS30658 Rev. 4 - 2
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LMN200B02
Note:
(Note 5)
Device
Marking Code
Packaging
Shipping
LMN200B02-7
PM2
SOT-363
3000/Tape & Reel
5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PM2
YM
NEW PRODUCT
Ordering Information
PM2 = Product Type Marking Code,
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Fig. 21
Date Code Key
Year
2006
2007
2008
2009
Code
T
U
V
W
Month
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
DS30658 Rev. 4 - 2
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LMN200B02
NEW PRODUCT
Mechanical Details
SOT-363
A
B C
Dim
Min
Max
A
0.1
0.3
B
1.15
1.35
C
2
2.2
D
H
K
M
J
F
D
L
Fig. 22
0.65 Nominal
F
0.3
0.4
H
1.8
2.2
J
-
0.1
K
0.9
1
L
0.25
0.4
M
0.1
0.25
α
0°
8°
All Dimensions in mm
Suggested Pad Layout: (Based on IPC-SM-782)
E
Z
E
C
G
Y
X
Figure 23
Dimensions
SOT-363*
Z
2.5
G
1.3
X
0.42
Y
0.6
C
1.9
E
0.65
* Typical dimensions in mm
Fig. 23
IMPORTANT NOTICE
Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein;
neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such
use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages.
LIFE SUPPORT
The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the
component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated.
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LMN200B02
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