BU406 NPN Epitaxial Silicon Transistor Features Description • High-Voltage Capability The BU406 is a 400 V 7 A Silicon Epitaxial Planar NPN Transistor. The BU406 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation. • High Switching Speed • Low Saturation Voltage Applications • Horizontal deflection for TV and CRT 1 1.Base TO-220 2.Collector 3.Emitter Ordering Information Part Number Marking BU406 BU406 BU406TU BU406 Package Packing Method TO-220 3L Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted. Symbol Parameter Value Units 400 200 V V VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO IC Emitter-Base Voltage Collector Current (DC) 6 7 V A ICP IB Collector Current (Pulse) Base Current 10 4 A A PC TJ Collector Dissipation Junction Temperature 60 150 W °C TSTG Storage Temperature - 55 to 150 °C © 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1 www.fairchildsemi.com 1 BU406 — NPN Epitaxial Silicon Transistor September 2013 Values are at TC = 25°C unless otherwise noted. Symbol ICES IEBO VCE(sat) VBE(sat) fT tOFF Parameter Collector Cut-Off Current Test Condition VCE = 400 V, VBE = 0 VCE = 250 V, VBE = 0 Emitter Cut-Off Current VCE = 250 V, VBE = 0 at TC = 150°C VBE = 6 V, IC = 0 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 5 A, IB = 0.5 A IC = 5 A, IB = 0.5 A Current Gain Bandwidth Product Turn-Off Time VCE = 10 V, IC = 0.5 A IC = 5 A, IB = 0.5 A © 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1 Min. Max. Units 5 100 mA μA 1 mA 1 mA 1 1.2 V V 0.75 MHz μs 10 www.fairchildsemi.com 2 BU406 — NPN Epitaxial Silicon Transistor Electrical Characteristics A 00m IB = 2 IB = 1000 mA 180 60mA IB = 1 A = 140m IB 4 VCE = 5V 0mA IB = 12 0mA IB = 10 mA = I B 80 IB = 60 3 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 mA mA I B = 40 2 IB = 20mA 1 0 0 1 2 3 4 5 6 7 8 9 100 10 1 10 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE 1000 10000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain 10000 1000 f = 1MHz IC = 10 IB Cob [pF], CAPACITANCE VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE 100 VBE(sat) 1000 100 VCE(sat) 100 10 10 1 1 10 100 1000 10000 1 10 IC[mA], COLLECTOR CURRENT 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 80 PC [W], POWER DISSIPATIOAN 10 IC Max. (Continuous) s s m 10 s 0m 10 ited m Li n io at 1m ip ss Di 1 VCE MAX. d ite im bL S/ IC[A], COLLECTOR CURRENT 70 IC Max. (Pulsed) 0.1 1 10 50 40 30 20 10 0 100 0 25 50 75 100 125 150 175 200 o TC[ C], CASE TEMPERATURE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area © 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1 60 Figure 6. Power Derating www.fairchildsemi.com 3 BU406 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics BU406 — NPN Epitaxial Silicon Transistor Physical Dimensions TO-220 Figure 7. TO-220, MOLDED, 3-LEAD, JEDEC VARIATION AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/TO/TO220Y03.pdf. For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-TO220Y03_SHEDCL.pdf. © 2000 Fairchild Semiconductor Corporation BU406 Rev. 1.2.1 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool¥ AccuPower¥ AX-CAP®* BitSiC¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL¥ Current Transfer Logic¥ DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax¥ ESBC¥ FPS¥ F-PFS¥ FRFET® SM Global Power Resource GreenBridge¥ Green FPS¥ Green FPS¥ e-Series¥ Gmax¥ GTO¥ IntelliMAX¥ ISOPLANAR¥ Making Small Speakers Sound Louder and Better™ MegaBuck¥ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MicroPak2¥ MillerDrive¥ MotionMax¥ mWSaver® OptoHiT¥ OPTOLOGIC® OPTOPLANAR® ® Fairchild® Fairchild Semiconductor® FACT Quiet Series¥ ® FACT FAST® FastvCore¥ FETBench¥ Sync-Lock™ ® PowerTrench® PowerXS™ Programmable Active Droop¥ QFET® QS¥ Quiet Series¥ RapidConfigure¥ ¥ Saving our world, 1mW/W/kW at a time™ SignalWise¥ SmartMax¥ SMART START¥ Solutions for Your Success¥ SPM® STEALTH¥ SuperFET® SuperSOT¥-3 SuperSOT¥-6 SuperSOT¥-8 SupreMOS® SyncFET¥ ®* TinyBoost® ® TinyBuck TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TranSiC¥ TriFault Detect¥ TRUECURRENT®* PSerDes¥ ® UHC Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ VoltagePlus¥ XS™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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