SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL718 ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=210mΩ at 1.5A COMPLEMENTARY TYPE – FMMTL618 PARTMARKING DETAIL – L78 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -1 A Peak Pulse Current ICM -2 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot -500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C FMMTL718 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -20 -65 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -55 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -8.8 V IE=-100µA -20 -5 MAX. Collector Cut-Off Current ICBO -10 nA VCB=-15V Emitter Cut-Off Current IEBO -10 nA VEB=-4V Collector Cut-Off Current ICES -10 nA VCE=-15V Collector-Emitter Saturation Voltage VCE(sat) -33 -130 -230 -315 -50 -180 -320 -450 mV mV mV mV IC=-100mA, IB=-10mA* IC=-500mA, IB=-20mA* IC=-1A, IB=-50mA* IC=-1.5A,IB=-100mA Base-Emitter Saturation Voltage VBE(sat) -950 -1100 mV IC=-1.25A, IB=-100mA* Base-Emitter Turn On Voltage VBE(on) -850 -1000 mV IC=-1.25A, VCE=-2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 265 Collector-Base Breakdown Voltage Cobo 9 Switching times ton toff 108 121 300 300 200 120 50 500 450 320 200 80 IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-0.5A, VCE=-2V* IC=-1A, VCE=-2V* IC=-1.5A, VCE=-2V* 12 MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz ns ns IC=-1A, VCC=-10V IB1=IB2=-10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FMMTL718 TYPICAL CHARACTERISTICS 0.5 0.5 +25°C IC/IB=10 0.4 VCE(sat) - (V) VCE(sat) - (V) 0.4 IC/IB=10 IC/IB=20 IC/IB=50 0.3 0.2 -55°C +25°C +100°C +150°C 0.3 0.2 0.1 0.1 0 0 1m 10m 100m 1 10 10m 1m IC - Collector Current (A) VCE(sat) v IC 1 100m 10 IC - Collector Current (A) VCE(sat) v IC 800 IC/IB=10 1.2 +100°C +25°C -55°C VBE(sat) - (V) hFE - Typical Gain VCE=2V 400 0 0.8 -55°C +25°C +100°C +150°C 0.4 0 10m 1m 1 100m 10 1m IC - Collector Current (A) hFE v IC 10m 1 100m 10 IC - Collector Current (A) VBE(sat) v IC 1.2 2 IC - Collector Current (A) VCE=2V VBE(on) - (V) 1 0.8 0.6 0.4 -55°C +25°C +100°C +150°C 0.2 0 1 DC 1s 100ms 10ms 1ms 100µs 100m 10m 1m 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 0.1 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100