Catalyst CAT93C56VP2I-T3 2-kb microwire serial cmos eeprom Datasheet

CAT93C56, CAT93C57
2-Kb Microwire Serial CMOS EEPROM
FEATURES
DESCRIPTION
„ High speed operation: 2MHz
The CAT93C56/57 is a 2-Kb CMOS Serial EEPROM
device which is organized as either 128 registers of 16
bits (ORG pin at VCC) or 256 registers of 8 bits (ORG pin
at GND). Each register can be written (or read) serially
by using the DI (or DO) pin. The CAT93C56/57 features
sequential read and self-timed internal write with autoclear. On-chip Power-On Reset circuitry protects the
internal logic against powering up in the wrong state.
„ 1.8V to 5.5V supply voltage range
„ Selectable x8 or x16 memory organization
„ Sequential read
„ Software write protection
„ Power-up inadvertant write protection
„ Low power CMOS technology
„ 1,000,000 Program/erase cycles
„ 100 year data retention
„ Industrial temperature ranges
For Ordering Information details, see page 16.
„ RoHS-compliant 8-pin PDIP, SOIC, TSSOP and
8-pad TDFN packages
FUNCTIONAL SYMBOL
PIN CONFIGURATION
PDIP (L)
SOIC (V, X)
TSSOP (Y)
TDFN (VP2, ZD4*)
VCC
SOIC (W*)
ORG
CS
1
8 VCC
NC
1
8 ORG
SK
2
7 NC
VCC
2
7 GND
CS
DI
3
6 ORG
CS
3
6 DO
SK
DO
4
5 GND
SK
4
5 DI
DI
* TDFN 3x3mm (ZD4) and SOIC (W) rotated pin-out packages are
available for CAT93C57 and CAT93C56, Rev. E only (not
recommended for new designs of CAT93C56)
CAT93C56
CAT93C57
DO
GND
PIN FUNCTION
Pin Name
CS
SK
DI
DO
VCC
GND
ORG
NC
Function
Chip Select
Clock Input
Serial Data Input
Serial Data Output
Power Supply
Ground
Memory Organization
No Connection
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Note: When the ORG pin is connected to VCC, the x16 organization
is selected. When it is connected to ground, the x8 pin is selected. If
the ORG pin is left unconnected, then am internal pullup device will
select the x16 organization
1
Doc. No. MD-1088 Rev. P
CAT93C56, CAT93C57
Absolute Maximum Ratings(1)
Parameters
Storage Temperature
Voltage on Any Pin with Respect to Ground
(2)
Ratings
Units
-65 to +150
°C
-0.5 to +6.5
V
Reliability Characteristics(3)
Symbol
Parameter
Min
Units
NEND(4)
Endurance
1,000,000
Program/ Erase Cycles
100
Years
TDR
Data Retention
D.C. OPERATING CHARACTERISTICS, CAT93C56, Die Rev. G – New Product
VCC = +1.8V to +5.5V, TA=-40°C to +85°C unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC1
Power Supply Current (Write)
fSK = 1MHz, VCC = 5.0V
1
mA
ICC2
Power Supply Current (Read)
fSK = 1MHz, VCC = 5.0V
500
µA
ISB1
Power Supply Current
(Standby) (x8 Mode)
VIN = GND or VCC, CS = GND
ORG = GND
2
µA
ISB2
Power Supply Current
(Standby) (x16 Mode)
VIN = GND or VCC, CS = GND
ORG = Float or VCC
1
µA
ILI
Input Leakage Current
VIN = GND to VCC
1
µA
ILO
Output Leakage Current
VOUT = GND to VCC, CS = GND
1
µA
VIL1
Input Low Voltage
4.5V ≤ VCC < 5.5V
-0.1
0.8
V
VIH1
Input High Voltage
4.5V ≤ VCC < 5.5V
2
VCC + 1
V
VIL2
Input Low Voltage
1.8V ≤ VCC < 4.5V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.8V ≤ VCC < 4.5V
VCC x 0.7
VCC + 1
V
VOL1
Output Low Voltage
4.5V ≤ VCC < 5.5V, IOL = 2.1mA
0.4
V
VOH1
Output High Voltage
4.5V ≤ VCC < 5.5V, IOH = -400µA
VOL2
Output Low Voltage
1.8V ≤ VCC < 4.5V, IOL = 1mA
VOH2
Output High Voltage
1.8V ≤ VCC < 4.5V, IOH = -100µA
2.4
V
0.2
VCC - 0.2
V
V
Notes:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The DC input voltage on any pin should not be lower than -0.5V or higher than VCC + 0.5V. During transitions, the voltage on any pin may
undershoot to no less than -1.5V or overshoot to no more than VCC + 1.5V, for periods of less than 20 ns.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Block Mode, VCC = 5V, 25°C
Doc. No. MD-1088 Rev. P
2
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT93C56, CAT93C57
D.C. OPERATING CHARACTERISTICS, CAT93C56/57, Die Rev. E – Mature Product
(CAT93C56, Rev. E – NOT RECOMMENDED FOR NEW DESIGNS)
VCC = +1.8V to +5.5V, TA=-40°C to +125°C unless otherwise specified.
Symbol
Parameter
Test Conditions
Min
Max
Units
ICC1
Power Supply Current (Write)
fSK = 1MHz, VCC = 5.0V
3
mA
ICC2
Power Supply Current (Read)
fSK = 1MHz, VCC = 5.0V
500
µA
ISB1
Power Supply Current
(Standby) (x8 Mode)
VIN = GND or VCC, CS = GND
ORG = GND
10
µA
ISB2
Power Supply Current
(Standby) (x16 Mode)
VIN = GND or VCC, CS = GND
ORG = Float or VCC
10
µA
ILI
Input Leakage Current
VIN = GND to VCC
1
µA
ILO
Output Leakage Current
VOUT = GND to VCC, CS = GND
1
µA
VIL1
Input Low Voltage
4.5V ≤ VCC < 5.5V
-0.1
0.8
V
VIH1
Input High Voltage
4.5V ≤ VCC < 5.5V
2
VCC + 1
V
VIL2
Input Low Voltage
1.8V ≤ VCC < 4.5V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.8V ≤ VCC < 4.5V
VCC x 0.7
VCC + 1
V
VOL1
Output Low Voltage
4.5V ≤ VCC < 5.5V, IOL = 2.1mA
0.4
V
VOH1
Output High Voltage
4.5V ≤ VCC < 5.5V, IOH = -400µA
VOL2
Output Low Voltage
1.8V ≤ VCC < 4.5V, IOL = 1mA
VOH2
Output High Voltage
1.8V ≤ VCC < 4.5V, IOH = -100µA
2.4
V
0.2
VCC - 0.2
V
V
PIN CAPACITANCE
TA = 25°C, f = 1MHz, VCC = 5V
Symbol
COUT
CIN
(1)
(1)
Test
Conditions
Output Capacitance (DO)
Input Capacitance (CS, SK, DI, ORG)
Min
Typ
Max
Units
VOUT = 0V
5
pF
VIN = 0V
5
pF
Notes:
(1) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc. No. MD-1088 Rev. P
CAT93C56, CAT93C57
A.C. CHARACTERISTICS(1), CAT93C56, Die Rev. G – New Product
VCC = +1.8V to +5.5V, TA = -40°C to +85°C, unless otherwise specified.
Limits
Symbol
Parameter
Min
Units
Max
tCSS
CS Setup Time
50
ns
tCSH
CS Hold Time
0
ns
tDIS
DI Setup Time
100
ns
tDIH
DI Hold Time
100
ns
tPD1
Output Delay to 1
0.25
µs
tPD0
Output Delay to 0
0.25
µs
tHZ(2)
Output Delay to High-Z
100
ns
tEW
Program/Erase Pulse Width
5
ms
tCSMIN
Minimum CS Low Time
0.25
µs
tSKHI
Minimum SK High Time
0.25
µs
tSKLOW
Minimum SK Low Time
0.25
µs
tSV
Output Delay to Status Valid
SKMAX
Maximum Clock Frequency
DC
0.25
µs
2000
kHz
A.C. CHARACTERISTICS (1), CAT93C56/57, Die Rev. E – Mature Product
(CAT93C56 Rev. E - NOT RECOMMENDED FOR NEW DESIGNS)
Limits
Symbol
Parameter
VCC = 1.8V - 5.5V
Min
Max
VCC = 2.5V - 5.5V
Min
Max
VCC = 4.5V - 5.5V
Min
Units
Max
tCSS
CS Setup Time
200
100
50
ns
tCSH
CS Hold Time
0
0
0
ns
tDIS
DI Setup Time
400
200
100
ns
tDIH
DI Hold Time
400
200
100
ns
tPD1
Output Delay to 1
1
0.5
0.25
µs
tPD0
Output Delay to 0
1
0.5
0.25
µs
tHZ(2)
Output Delay to High-Z
400
200
100
ns
tEW
Program/Erase Pulse Width
10
10
10
ms
tCSMIN
Minimum CS Low Time
1
0.5
0.25
µs
tSKHI
Minimum SK High Time
1
0.5
0.25
µs
tSKLOW
Minimum SK Low Time
1
0.5
0.25
µs
tSV
Output Delay to Status Valid
SKMAX
Maximum Clock Frequency
1
DC
250
0.5
DC
500
DC
0.25
µs
1000
kHz
Notes:
(1)
Test conditions according to “A.C. Test Conditions” table.
(2)
These parameters are tested initially and after a design or process change that affects the parameter according to appropriate
AEC-Q100 and JEDEC test methods.
Doc. No. MD-1088 Rev. P
4
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT93C56, CAT93C57
POWER-UP TIMING(1) (2)
Symbol
Parameter
Max
Units
tPUR
Power-up to Read Operation
1
ms
tPUW
Power-up to Write Operation
1
ms
Notes:
(1) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate
AEC-Q100 and JEDEC test methods.
(2) tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
A.C. Test Conditions
Input Rise and Fall Times
≤ 50 ns
Input Pulse Voltages
0.4V to 2.4V
4.5V ≤ VCC ≤ 5.5V
Timing Reference Voltages
0.8V, 2.0V
4.5V ≤ VCC ≤ 5.5V
Input Pulse Voltages
0.2VCC to 0.7VCC
1.8V ≤ VCC ≤ 4.5V
Timing Reference Voltages
0.5VCC
1.8V ≤ VCC ≤ 4.5V
Output Load
Current Source IOLmax/IOHmax; CL=100pF
DEVICE OPERATION
The CAT93C56/57 is a 2048-bit nonvolatile memory
intended for use with industry standard microprocessors. The CAT93C56/57 can be organized as
either registers of 16 bits or 8 bits. When organized as
X16, seven 10-bit instructions for 93C57 or seven 11bit instructions for 93C56 control the reading, writing
and erase operations of the device. When organized
as X8, seven 11-bit instructions for 93C57 or seven
12-bit instructions for 93C56 control the reading,
writing and erase operations of the device. The
CAT93C56/57 operates on a single power supply and
will generate on chip, the high voltage required during
any write operation.
except when reading data from the device, or when
checking the ready/busy status after a write operation.
The serial communication protocol follows the timing
shown in Figure 1.
The ready/busy status can be determined after the start
of internal write cycle by selecting the device (CS high)
and polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that
the device is ready for the next instruction. If necessary,
the DO pin may be placed back into a high impedance
state during chip select by shifting a dummy “1” into the
DI pin. The DO pin will enter the high impedance state
on the rising edge of the clock (SK). Placing the DO pin
into the high impedance state is recommended in
applications where the DI pin and the DO pin are to be
tied together to form a common DI/O pin.
Instructions, addresses, and write data are clocked
into the DI pin on the rising edge of the clock (SK).
The DO pin is normally in a high impedance state
Figure 1. Sychronous Data Timing
tSKHI
tSKLOW
tCSH
SK
tDIS
tDIH
VALID
DI
VALID
tCSS
CS
tDIS
DO
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
tPD0,tPD1
tCSMIN
DATA VALID
5
Doc. No. MD-1088 Rev. P
CAT93C56, CAT93C57
The format for all instructions sent to the device is a
logical “1” start bit, a 2-bit (or 4-bit) opcode, 7-bit
address (CAT93C57) / 8-bit address (CAT93C56) (an
additional bit when organized X8) and for write
operations a 16-bit data field (8-bit for X8 organi–
zations). The instruction format is shown in Instruction
Set table.
INSTRUCTION SET
Instruction
READ
ERASE
WRITE
EWEN
EWDS
ERAL
WRAL
Device
Type
Address
Data
Start
Bit
Opcode
x8
x16
1
10
A8-A0
A7-A0
93C57
1
10
A7-A0
A6-A0
93C56(1)
1
11
A8-A0
A7-A0
93C57
1
11
A7-A0
A6-A0
93C56(1)
1
01
A8-A0
A7-A0
D7-D0
D15-D0
93C57
1
01
A7-A0
A6-A0
D7-D0
D15-D0
93C56(1)
1
00
11XXXXXXX
11XXXXXX
93C57
1
00
11XXXXXX
11XXXXX
93C56(1)
1
00
00XXXXXXX
00XXXXXX
93C57
1
00
00XXXXXX
00XXXXX
93C56(1)
1
00
10XXXXXXX
10XXXXXX
93C57
1
00
10XXXXXX
10XXXXX
93C56(1)
1
00
01XXXXXXX
01XXXXXX
D7-D0
D15-D0
93C57
1
00
01XXXXXX
01XXXXX
D7-D0
D15-D0
93C56
(1)
x8
x16
Comments
Read Address
AN–A0
Clear Address
AN–A0
Write Address
AN–A0
Write Enable
Write Disable
Clear All
Addresses
Write All
Addresses
Note:
(1) Address bit A8 for 256x8 organization and A7 for 128x16 organization are "Don't Care" bits, but must be kept at either a "1" or "0" for
READ, WRITE and ERASE commands.
Doc. No. MD-1088 Rev. P
6
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT93C56, CAT93C57
address space, then loops back to address 0. In the
sequential READ mode, only the initial data word is
preceeded by a dummy zero bit. All subsequent data
words will follow without a dummy zero bit. The READ
instruction timing is illustrated in Figure 2.
Read
Upon receiving a READ command and an address
(clocked into the DI pin), the DO pin of the
CAT93C56/57 will come out of the high impedance
state and, after sending an initial dummy zero bit, will
begin shifting out the data addressed (MSB first). The
output data bits will toggle on the rising edge of the
SK clock and are stable after the specified time delay
(tPD0 or tPD1).
Erase/Write Enable and Disable
The CAT93C56/57 powers up in the write disable state.
Any writing after power-up or after an EWDS (erase/write
disable) instruction must first be preceded by the EWEN
(erase/write enable) instruction. Once the write
instruction is enabled, it will remain enabled until power
to the device is removed, or the EWDS instruction is
sent. The EWDS instruction can be used to disable all
CAT93C56/57 write and erase instructions, and will
prevent any accidental writing or clearing of the device.
Data can be read normally from the device regardless of
the write enable/disable status. The EWEN and EWDS
instructions timing is shown in Figure 3.
For the CAT93C56/57, after the initial data word has
been shifted out and CS remains asserted with the SK
clock continuing to toggle, the device will automatically increment to the next address and shift out
the next data word in a sequential READ mode. As
long as CS is continuously asserted and SK continues
to toggle, the device will keep incrementing to the next
address automatically until it reaches to the end of the
Figure 2. READ Instruction Timing
SK
CS
Don't Care
AN
DI
1
1
AN–1
A0
0
tPD0
HIGH-Z
DO
Dummy 0
D15 . . . D0
or
D7 . . . D0
Address + 1
D15 . . . D0
or
D7 . . . D0
Address + 2
D15 . . . D0
or
D7 . . . D0
Address + n
D15 . . .
or
D7 . . .
Figure 3. EWEN/EWDS Instruction Timing
SK
STANDBY
CS
DI
1
0
0
*
* ENABLE = 11
DISABLE = 00
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
7
Doc. No. MD-1088 Rev. P
CAT93C56, CAT93C57
Write
After receiving a WRITE command (Figure 4), address
and the data, the CS (Chip Select) pin must be
deselected for a minimum of tCSMIN. The falling edge of
CS will start the self clocking clear and data store cycle
of the memory location specified in the instruction. The
clocking of the SK pin is not necessary after the device
has entered the self clocking mode. The ready/busy
status of the CAT93C56/57 can be determined by
selecting the device and polling the DO pin. Since this
device features Auto-Clear before write, it is NOT
necessary to erase a memory location before it is
written into.
Erase
Upon receiving an ERASE command and address, the
CS (Chip Select) pin must be deasserted for a
minimum of tCSMIN (Figure 5). The falling edge of CS will
start the self clocking clear cycle of the selected
memory location. The clocking of the SaK pin is not
necessary after the device has entered the self clocking
mode. The ready/busy status of the CAT93C56/57 can
be determined by selecting the device and polling the
DO pin. Once cleared, the content of a cleared location
returns to a logical “1” state.
Figure 4. Write Instruction Timing
SK
tCSMIN
AN
DI
STANDBY
STATUS
VERIFY
CS
1
0
AN-1
A0
DN
D0
1
tSV
DO
tHZ
BUSY
HIGH-Z
READY
HIGH-Z
tEW
Figure 5. Erase Instruction Timing
SK
STATUS VERIFY
CS
AN
DI
DO
1
1
tCS
A0
AN-1
STANDBY
1
tSV
HIGH-Z
tHZ
BUSY
READY
HIGH-Z
tEW
Doc. No. MD-1088 Rev. P
8
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT93C56, CAT93C57
Erase All
Upon receiving an ERAL command (Figure 6), the CS
(Chip Select) pin must be deselected for a minimum of
tCSMIN. The falling edge of CS will start the self clocking
clear cycle of all memory locations in the device. The
clocking of the SK pin is not necessary after the
device has entered the self clocking mode. The
ready/busy status of the CAT93C56/57 can be determined by selecting the device and polling the DO pin.
Once cleared, the contents of all memory bits return to
a logical “1” state.
Write All
Upon receiving a WRAL command and data, the CS
(Chip Select) pin must be deselected for a minimum of
tCSMIN (Figure 7). The falling edge of CS will start the
self clocking data write to all memory locations in the
device. The clocking of the SK pin is not necessary
after the device has entered the self clocking mode.
The ready/busy status of the CAT93C56/57 can be
determined by selecting the device and polling the DO
pin. It is not necessary for all memory locations to be
cleared before the WRAL command is executed.
Figure 6. ERAL Instruction Timing
SK
CS
STATUS VERIFY
STANDBY
tCS
DI
1
0
0
0
1
tSV
tHZ
HIGH-Z
DO
BUSY
READY
HIGH-Z
tEW
Figure 7. WRAL Instruction Timing
SK
CS
STATUS VERIFY
STANDBY
tCSMIN
DI
1
0
0
0
DN
1
D0
tSV
tHZ
DO
BUSY
READY
HIGH-Z
tEW
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
9
Doc. No. MD-1088 Rev. P
CAT93C56, CAT93C57
PACKAGE OUTLINE DRAWINGS
PDIP 8-Lead 300mils (L)
SYMBOL
MIN
NOM
A
E1
5.33
A1
0.38
A2
2.92
3.30
4.95
b
0.36
0.46
0.56
b2
1.14
1.52
1.78
c
0.20
0.25
0.36
D
9.02
9.27
10.16
E
7.62
7.87
8.25
e
PIN # 1
IDENTIFICATION
MAX
2.54 BSC
E1
6.10
eB
7.87
L
2.92
6.35
7.11
10.92
3.30
3.80
D
TOP VIEW
E
A2
A
A1
c
b2
L
e
eB
b
SIDE VIEW
END VIEW
For current Tape and Reel information, download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
Notes:
(1)
(2)
All dimensions are in millimeters.
Complies with JEDEC MS-001.
Doc. No. MD-1088 Rev. P
10
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT93C56, CAT93C57
SOIC 8-Lead 150mils (V, W)
E1
E
SYMBOL
MIN
A
1.35
1.75
A1
0.10
0.25
b
0.33
0.51
MAX
c
0.19
0.25
D
4.80
5.00
E
5.80
6.20
E1
3.80
e
PIN # 1
IDENTIFICATION
NOM
4.00
1.27 BSC
h
0.25
0.50
L
0.40
1.27
θ
0º
8º
TOP VIEW
D
h
A1
θ
A
c
e
b
L
SIDE VIEW
END VIEW
For current Tape and Reel information, download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
Notes:
(1)
(2)
All dimensions are in millimeters. Angles in degrees.
Complies with JEDEC MS-012.
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
11
Doc. No. MD-1088 Rev. P
CAT93C56, CAT93C57
SOIC 8-Lead EIAJ (208mils) (X)
SYMBOL
MIN
NOM
A
E1 E
MAX
2.03
A1
0.05
0.25
b
0.36
0.48
c
0.19
0.25
D
5.13
5.33
E
7.75
8.26
E1
5.13
e
5.38
1.27 BSC
L
0.51
0.76
θ
0º
8º
PIN#1 IDENTIFICATION
TOP VIEW
D
A
e
b
θ
L
A1
c
END VIEW
SIDE VIEW
For current Tape and Reel information, download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
Notes:
(1)
(2)
All dimensions are in millimeters. Angles in degrees.
Complies with EIAJ EDR-7320.
Doc. No. MD-1088 Rev. P
12
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT93C56, CAT93C57
TSSOP 8-Lead 4.4mm (Y)
b
SYMBOL
MIN
NOM
A
E1
E
MAX
1.20
A1
0.05
A2
0.80
0.15
b
0.19
0.30
c
0.09
0.20
D
2.90
3.00
3.10
E
6.30
6.40
6.50
E1
4.30
4.40
4.50
0.90
e
0.65 BSC
L
1.00 REF
L1
0.50
θ1
0°
0.60
1.05
0.75
8°
e
TOP VIEW
D
A2
A
A1
c
θ1
L1
L
SIDE VIEW
END VIEW
For current Tape and Reel information, download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
Notes:
(1)
(2)
All dimensions are in millimeters. Angles in degrees.
Complies with JEDEC MO-153.
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
13
Doc. No. MD-1088 Rev. P
CAT93C56, CAT93C57
TDFN 8-Pad 2 x 3mm (VP2)
D
e
A
b
E2
E
PIN#1
IDENTIFICATION
A1
PIN#1 INDEX AREA
D2
TOP VIEW
SIDE VIEW
SYMBOL
MIN
NOM
MAX
A
0.70
0.75
0.80
A1
0.00
0.02
0.05
A2
0.45
0.55
0.65
A3
0.20
0.25
0.30
D
1.90
2.00
2.10
D2
1.30
1.40
1.50
E
2.90
3.00
3.10
E2
1.20
1.30
1.40
e
L
BOTTOM VIEW
A2
A3
0.20 REF
b
L
FRONT VIEW
050 TYP
0.20
0.30
0.40
For current Tape and Reel information, download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
Notes:
(1)
(2)
All dimensions are in millimeters.
Complies with JEDEC MO-229.
Doc. No. MD-1088 Rev. P
14
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT93C56, CAT93C57
TDFN 8-Pad 3 x 3mm (ZD4)
D
A
e
b
L
E
E2
PIN#1 ID
PIN#1 INDEX AREA
A1
SIDE VIEW
TOP VIEW
SYMBOL
MIN
NOM
MAX
A
0.70
0.75
0.80
A1
0.00
0.02
0.05
A3
b
A3
A1
0.30
0.37
3.10
D
2.90
3.00
2.20
2.30
2.40
E
2.90
3.00
3.10
E2
1.40
1.50
1.60
e
BOTTOM VIEW
A
0.20 REF
0.23
D2
L
D2
FRONT VIEW
0.65 TYP
0.20
0.30
0.40
For current Tape and Reel information, download the PDF file from:
http://www.catsemi.com/documents/tapeandreel.pdf.
Notes:
(1)
(2)
All dimensions are in millimeters.
Complies with JEDEC MO-229.
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
15
Doc. No. MD-1088 Rev. P
CAT93C56, CAT93C57
EXAMPLE OF ORDERING INFORMATION
CAT93C56, Die Rev. G, New Product
Prefix
Device # Suffix
CAT
93C56
V
Company ID
Product Number
93C56
L:
V:
X:
Y:
VP2:
Package
PDIP
SOIC, JEDEC
SOIC, EIAJ(4)
TSSOP
TDFN (2x3mm)
I
-G
T3
Temperature Range
I = Industrial (-40ºC to 85ºC)
Lead Finish
Blank: Matte-Tin
G: NiPdAu
Tape & Reel
T: Tape & Reel
2: 2000 units/Reel(4)
3: 3000 units/Reel
Notes:
(1)
All packages are RoHS-compliant (Lead-free, Halogen-free).
(2)
The standard lead finish is NiPdAu.
(3)
The device used in the above example is a CAT93C56VI-GT3 (SOIC, Industrial Temperature, NiPdAu, Tape & Reel).
(4)
For SOIC, EIAJ (X) package the standard lead finish is Matte-Tin. This package is available in 2000 pcs/reel, i.e. CAT93C56XI-T2.
(5)
For additional package and temperature options, please contact your nearest Catalyst Semiconductor Sales office.
CAT93C56/57, Die Rev. E, Mature Product
(CAT93C56, Rev. E – Not Recommended for new Designs)
Prefix
Device # Suffix
CAT
93C56
V
I
-1.8
-G T3
Temperature Range
I = Industrial (-40ºC to 85ºC)
A = Automotive (-40ºC to 105ºC)
E = Extended (-40ºC to 125ºC)
Company ID
Product Number
93C56
93C57
L:
V:
W:
X:
Y:
ZD4:
Package
PDIP
SOIC, JEDEC
SOIC, JEDEC
SOIC, EIAJ(5)
TSSOP
TDFN (3x3mm)
Rev E(4)
Die Revision
93C56: E
93C57: E
Operating Voltage
Blank: VCC = 2.5V to 5.5V
1.8: VCC = 1.8V to 5.5V
Tape & Reel
T: Tape & Reel
(5)
2: 2000 units/Reel
3: 3000 units/Reel
Lead Finish
Blank: Matte-Tin
G: NiPdAu
Notes:
(1)
All packages are RoHS-compliant (Lead-free, Halogen-free).
(2)
The standard finish is NiPdAu.
(3)
The device used in the above example is a CAT93C56VI-1.8-GT3 (SOIC green package, Industrial Temperature, 1.8 Volt to 5.5 Volt
Operating Voltage, NiPdAu finish, Tape & Reel.)
(4)
Product die revision letter is marked on top of the package as a suffix to the production date code (e.g., AYWWE). For additional information, please contact your Catalyst sales office.
(5)
For SOIC, EIAJ (X) package the standard lead finish is Matte-Tin. This package is available in 2000 pcs/reel, i.e. CAT93C56XI-T2.
(6)
For additional package and temperature options, please contact your nearest Catalyst Semiconductor Sales office.
Doc. No. MD-1088 Rev. P
16
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT93C56, CAT93C57
REVISION HISTORY
Date
Rev.
Comments
05/14/04
L
New Data Sheet Created From CAT93C46/56/57/66/86. Parts CAT93C56, CAT93C56,
CAT93C57, CAT93C56/57, CAT93C76 and CAT93C86 have been separated into
single data sheets
10/13/06
M
Updated Instruction Set
03/18/05
N
Updated Description
10/13/06
O
Update Features
Update Pin Configuration
Update Functional Symbol
Update Pin Functions
Update D.C. Operating Characteristics (VCC Range)
Update A.C. Characteristics (VCC Range)
Update Ordering Information
08/21/07
P
Updated Features/Description
Remove "Die Rev E" from the title
Update Pin Configuration / Packages
Update Absolute Maximum Rating
Update Reliability Characteristics
Update D.C. Operating Characteristics
Added D.C. / A.C. Characteristics for CAT93C56 Die Rev G
Rearrange / Format Text and Figures
Update Package Outline Drawings
Added Example of Ordering Information for CAT93C56 Die Rev. G
Add MD- to document number
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
17
Doc. No. MD-1088 Rev. P
Copyrights, Trademarks and Patents
© Catalyst Semiconductor, Inc.
Trademarks and registered trademarks of Catalyst Semiconductor include each of the following:
Beyond Memory™, DPP™, EZDim™, LDD™, MiniPot™ and Quad-Mode™
Catalyst Semiconductor has been issued U.S. and foreign patents and has patent applications pending that protect its products.
CATALYST SEMICONDUCTOR MAKES NO WARRANTY, REPRESENTATION OR GUARANTEE, EXPRESS OR IMPLIED, REGARDING THE SUITABILITY OF ITS
PRODUCTS FOR ANY PARTICULAR PURPOSE, NOR THAT THE USE OF ITS PRODUCTS WILL NOT INFRINGE ITS INTELLECTUAL PROPERTY RIGHTS OR THE
RIGHTS OF THIRD PARTIES WITH RESPECT TO ANY PARTICULAR USE OR APPLICATION AND SPECIFICALLY DISCLAIMS ANY AND ALL LIABILITY ARISING
OUT OF ANY SUCH USE OR APPLICATION, INCLUDING BUT NOT LIMITED TO, CONSEQUENTIAL OR INCIDENTAL DAMAGES.
Catalyst Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal
injury or death may occur.
Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled
"Advance Information" or "Preliminary" and other products described herein may not be in production or offered for sale.
Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical
semiconductor applications and may not be complete.
Catalyst Semiconductor, Inc.
Corporate Headquarters
2975 Stender Way
Santa Clara, CA 95054
Phone: 408.542.1000
Fax:
408.542.1200
www.catsemi.com
Document No: MD-1088
Revision:
P
Issue date:
08/21/07
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