ISC BUS22C Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
BUS22B/C
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS22B
450V (Min)-BUS22C
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
PARAMETER
Collector- Emitter
Voltage(VBE= 0)
Collector-Emitter
Voltage
MAX
BUS22B
750
BUS22C
850
BUS22B
400
BUS22C
450
UNIT
V
V
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
6
A
PC
Collector Power Dissipation
@TC=25℃
125
W
Tj
Junction Temperature
200
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.4
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
BUS22B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUS22B
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MAX
IC= 0.1A ; IB= 0; L= 25mH
BUS22B
VBE(sat)
TYP.
UNIT
400
BUS22C
VCE(sat)
MIN
V
450
IC= 6A; IB= 0.8A
1.5
B
Collector-Emitter
Saturation Voltage
V
BUS22C
IC= 6A; IB= 1A
1.5
BUS22B
IC= 6A; IB= 0.8A
1.5
B
B
Base-Emitter
Saturation Voltage
V
BUS22C
IC= 6A; IB= 1A
1.5
B
ICES
Collector Cutoff Current
VCE=VCESMmax; VBE= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
10
mA
hFE
DC Current Gain
IC= 1A ; VCE= 5V
18
Switching Times , Resistive Load
ton
Turn-On Time
tstg
Storage Time
0.5
μs
3.0
μs
0.3
μs
For BUS22B
IC= 6A ;IB1= -IB2= 0.8A
For BUS22C
IC= 6A ;IB1= -IB2= 1A
tf
Fall Time
isc Website:www.iscsemi.cn
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