ON MJD31CG Complementary power transistor Datasheet

MJD31, NJVMJD31T4G,
MJD31C, NJVMJD31CT4G
(NPN), MJD32,
NJVMJD32T4G, MJD32C,
NJVMJD32CG,
NJVMJD32CT4G (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
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SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
COMPLEMENTARY
Features
•
•
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
COLLECTOR
2,4
1
BASE
COLLECTOR
2,4
1
BASE
3
EMITTER
3
EMITTER
4
4
1 2
3
1
DPAK
CASE 369C
STYLE 1
2
3
IPAK
CASE 369D
STYLE 1
MARKING DIAGRAMS
AYWW
J3xxG
DPAK
A
Y
WW
xx
G
YWW
J3xxG
IPAK
= Site Code
= Year
= Work Week
= 1, 1C, 2, or 2C
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 12
1
Publication Order Number:
MJD31/D
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector−Emitter Voltage
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
VCEO
Collector−Base Voltage
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
3.0
Adc
ICM
5.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
Collector Current − Continuous
Collector Current − Peak
Operating and Storage Junction Temperature Range
40
100
40
100
15
0.12
1.56
0.012
Vdc
Vdc
W
W/°C
W
W/°C
TJ, Tstg
−65 to + 150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
8.3
°C/W
Thermal Resistance, Junction−to−Ambient*
RqJA
80
°C/W
TL
260
°C
Lead Temperature for Soldering Purposes
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
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2
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
VCEO(sus)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G
(VCE = 60 Vdc, IB = 0)
MJD31C, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G
ICEO
Collector Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
Vdc
40
100
−
−
mAdc
−
50
−
50
−
20
−
1
25
10
−
50
−
1.2
−
1.8
3
−
20
−
mAdc
mAdc
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 1 Adc, VCE = 4 Vdc)
(IC = 3 Adc, VCE = 4 Vdc)
Collector−Emitter Saturation Voltage
(IC = 3 Adc, IB = 375 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 3 Adc, VCE = 4 Vdc)
VBE(on)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)
fT
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT = ⎪hfe⎪• ftest.
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3
MHz
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS
VCC
+30 V
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
RC
25 ms
2 20
+11 V
RB
SCOPE
0
1.5 15
TA (SURFACE MOUNT)
TC
1 10
0.5
5
0
0
25
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
50
75
100
T, TEMPERATURE (°C)
125
150
Figure 2. Switching Time Test Circuit
2
0.3
3
2
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
ts′
1
t, TIME (s)
μ
t, TIME (s)
μ
0.7
0.5
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
REVERSE ALL POLARITIES FOR PNP.
Figure 1. Power Derating
1
D1
51
-9 V
tr @ VCC = 10 V
tf @ VCC = 30 V
0.7
0.5
0.3
0.2
tf @ VCC = 10 V
0.1
0.07
0.05
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.03
0.02
0.03
1
0.7
0.5
0.3
0.2
td @ VBE(off) = 2 V
0.05 0.07 0.1
0.5 0.7
0.03
0.03
1
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Turn−On Time
Figure 4. Turn−Off Time
2
3
D = 0.5
0.2
RqJC(t) = r(t) RqJC
RqJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
0.1
0.1
0.05
0.07
0.05
0.01
0.03
0.3
0.1
0.07
0.05
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
Figure 5. Thermal Response
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4
20
30
50
100
200 300
500
1k
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
1000
10
1
0.01
0.6
VCE(sat), COLL−EMITT SATURATION
VOLTAGE (V)
−55°C
0.1
1
10
25°C
100
10
1
0.01
150°C
0.2
25°C
0.1
−55°C
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
1.2
1.1
0.9
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.01
0.1
1
−55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
10
Figure 9. Base−Emitter Saturation Voltage
VCE, COLLECTOR−EMITTER VOLTAGE (V)
VCE = 5 V
IC/IB = 10
1.0
Figure 8. Collector−Emitter Saturation Voltage
VBE(on), BASE−EMITTER ON VOLTAGE (V)
10
Figure 7. DC Current Gain at VCE = 2 V
0.3
0.2
0.001
1
Figure 6. DC Current Gain at VCE = 4 V
0.4
1.1
0.1
IC, COLLECTOR CURRENT (A)
0.5
1.2
−55°C
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0
0.001
VCE = 2 V
150°C
hFE, DC CURRENT GAIN
25°C
100
1000
VCE = 4 V
VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
150°C
10
2
TA =
25°C
1.6
1.2
100 mA
500 mA
0.8
IC = 3 A
1A
0.4
10 mA
0
0.01
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
IB, BASE CURRENT (mA)
Figure 10. Base-Emitter “On” Voltage
Figure 11. Collector Saturation Region
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5
1000
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)
Cib
100
Cob
10
100
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
TA = 25°C
0.1
1
10
VR, REVERSE VOLTAGE (V)
VCE = 5 V
TA = 25°C
10
1
0.001
1
100
Figure 12. Capacitance
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 13. Current−Gain−Bandwidth Product
10
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
1000
1
0.1
0.01
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Safe Operating Area
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6
100
10
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)
1000
hFE, DC CURRENT GAIN
100
−55°C
10
1
0.01
0.9
1.4
0.4
0.3
0.2
25°C
0.1
0
0.001
0.01
0.1
1
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0.001
10
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 17. Collector−Emitter Saturation
Voltage
Figure 18. Base−Emitter Saturation Voltage
VCE = 5 V
1.0
0.9
150°C
25°C
0.6
−55°C
0.3
0.2
0.001
10
IC/IB = 10
150°C
0.5
0.4
1
Figure 16. DC Current Gain at VCE = 2 V
0.6
0.5
0.1
Figure 15. DC Current Gain at VCE = 4 V
−55°C
0.7
0.01
IC, COLLECTOR CURRENT (A)
IC/IB = 10
0.8
10
1
10
0.7
1.1
−55°C
IC, COLLECTOR CURRENT (A)
0.8
1.2
VBE(on), BASE−EMITTER ON
VOLTAGE (V)
1
100
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE(sat), COLL−EMITT SATURATION
VOLTAGE (V)
1
0.1
VCE = 2 V
25°C
150°C
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
1000
VCE = 4 V
25°C
150°C
2
TA =
25°C
500 mA
1.6
100 mA
1.2
1A
IC = 3 A
0.8
0.4
0
10 mA
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 20. Collector Saturation Region
Figure 19. Base−Emitter “On” Voltage
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7
1000
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
TYPICAL CHARACTERISTICS
Cib
100
Cob
10
1
0.1
1
10
100
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
TA = 25°C
VCE = 5 V
TA = 25°C
10
1
0.001
100
VR, REVERSE VOLTAGE (V)
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 21. Capacitance
Figure 22. Current−Gain−Bandwidth Product
10
IC, COLLECTOR CURRENT (A)
C, CAPACITANCE (pF)
1000
1 ms
1
1s
0.1
0.01
1
10
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 23. Safe Operating Area
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8
100
10
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
ORDERING INFORMATION
Package Type
Package
Shipping†
MJD31CG
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD31C1G
IPAK
(Pb−Free)
369D
75 Units / Rail
MJD31CRLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD31CT4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD31CT4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD31T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD31T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD32CG
DPAK
(Pb−Free)
369C
75 Units / Rail
NJVMJD32CG
DPAK
(Pb−Free)
369C
75 Units / Rail
MJD32CRLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD32CT4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD32CT4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
MJD32RLG
DPAK
(Pb−Free)
369C
1,800 / Tape & Reel
MJD32T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
NJVMJD32T4G
DPAK
(Pb−Free)
369C
2,500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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9
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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10
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
3.0
0.118
1.6
0.063
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,
MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)
PACKAGE DIMENSIONS
IPAK
CASE 369D
ISSUE C
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
T
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