MOTOROLA MCR265-9 Thyristor Datasheet

MOTOROLA
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by MCR265-2/D
SEMICONDUCTOR TECHNICAL DATA
MCR265-2
thru
MCR265-10
Thyristors
Silicon Controlled Rectifiers
. . . designed for inverse parallel SCR output devices for solid state relays, welders,
battery chargers, motor controls or applications requiring high surge operation.
• Photo Glass Passivated Blocking Junctions for High Temperature Stability,
Center Gate for Uniform Parameters
• 550 Amperes Surge Capability
• Blocking Voltage to 800 Volts
SCRs
55 AMPERES RMS
50 thru 800 VOLTS
G
A
K
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 125°C, Gate Open)
MCR265-2
MCR265-4
MCR265-6
MCR265-8
MCR265-10
Forward Current (TC = 70°C)
(All Conduction Angles)
Symbol
Value
VDRM
VRRM
Unit
Volts
50
200
400
600
800
IT(RMS)
IT(AV)
55
35
Amps
Peak Non-repetitive Surge Current — 8.3 ms
(1/2 Cycle, Sine Wave)
ITSM
550
Amps
Forward Peak Gate Power
PGM
20
Watts
PG(AV)
0.5
Watt
IGM
2
Amps
TJ
–40 to +125
°C
Tstg
–40 to +150
°C
Forward Average Gate Power
Forward Peak Gate Current
(300 µs, 120 PPS)
Operating Junction Temperature Range
Storage Temperature Range
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when
the device is to be used at high sustained currents.
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RθJC
0.9
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Peak Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
Typ
Max
Unit
—
—
—
—
10
2
µA
mA
—
1.5
1.9
Volts
—
—
20
40
50
90
IDRM, IRRM
TJ = 25°C
TJ = 125°C
Forward “On” Voltage(1)
(ITM = 110 A)
VTM
Gate Trigger Current (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
(TC = –40°C)
IGT
Gate Trigger Voltage (Continuous dc)
(Anode Voltage = 12 Vdc, RL = 100 Ohms)
VGT
—
1
1.5
Volts
Gate Non-Trigger Voltage
(Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C)
VGD
0.2
—
—
Volts
Holding Current
(Anode Voltage = 12 Vdc, Gate Open)
IH
—
30
75
mA
Turn-On Time
(ITM = 55 A, IGT = 200 mAdc)
tgt
—
1.5
—
µs
dv/dt
—
50
—
V/µs
Critical Rate-of-Rise of Off-State Voltage
(Gate Open, VD = Rated VDRM, Exponential Waveform)
1. Pulse Width
mA
p 300 µs, Duty Cycle p 2%.
FIGURE 1 — AVERAGE CURRENT DERATING
FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION
60
125
121
117
113
109
105
101
97
93
89
85
81
77
73
69
P(AV) , AVERAGE POWER (WATTS)
TC, MAXIMUM CASE TEMPERATURE ( ° C)
Min
α
α = CONDUCTION ANGLE
α = 30°
dc
60°
90°
180°
54
90°
48
60°
42
dc
36
30
α = 30°
24
18
α
α = CONDUCTION ANGLE
12
6.0
180°
0
0
4.0
8.0
12
16
20
24
28
32
36
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)
2
40
0
5.0
10
15
20
25
30
35
40
IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)*
Motorola Thyristor Device Data
FIGURE 3 — GATE TRIGGER CURRENT
FIGURE 4 — GATE TRIGGER VOLTAGE
2.5
3.0
VD = 12 Vdc
1.5
NORMALIZED GATE VOLTAGE
NORMALIZED GATE CURRENT
2.0
1.0
0.7
0.5
0.4
0.3
0.25
–60
–40
–20
0
20
40
60
80
100
120
2.0
VD = 12 Vdc
1.5
1.0
0.8
0.5
0.3
–60
140
–40
–20
TJ, JUNCTION TEMPERATURE (°C)
I TM , INSTANTANEOUS ON-STATE CURRENT (AMPS)
NORMALIZED HOLDING CURRENT
3.0
2.0
VD = 12 Vdc
1.0
0.7
0.5
– 40
– 20
0
20
40
60
20
40
60
80
100
140
120
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 5 — HOLDING CURRENT
0.3
– 60
0
80
100
120
140
FIGURE 6 — TYPICAL ON-STATE CHARACTERISTICS
1000
100
TJ = 25°C
10
1.0
0
TJ, JUNCTION TEMPERATURE (°C)
1.0
2.0
3.0
VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
FIGURE 7 — THERMAL RESPONSE
1.0
0.7
0.5
0.3
0.2
ZθJC(t) = RθJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
200 300
500
1k
2k
3k
5k
10k
t, TIME (ms)
Motorola Thyristor Device Data
3
PACKAGE DIMENSIONS
–T–
B
F
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
4
Q
A
STYLE 3:
PIN 1.
2.
3.
4.
U
1 2 3
H
CATHODE
ANODE
GATE
ANODE
K
Z
R
L
V
J
G
D
N
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.055
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.39
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A-04
(TO–220AB)
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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4
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Motorola Thyristor Device Data
*MCR265/D*
MCR265/D
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