Renesas HAF2027-90STL-E Silicon n channel power mosfet power switching Datasheet

HAF2027(L), HAF2027(S)
Silicon N Channel Power MOS FET
Power Switching
REJ03G1674-0100
Rev.1.00
May 19, 2008
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
•
•
•
•
Logic level operation (4 V Gate drive)
Built-in the over temperature shut-down circuit
High endurance capability against to the shut-down circuit
Latch type shut down operation (need 0 voltage recovery)
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
1
1
2
2
3
3
HAF2027(L)
HAF2027(S)
D
Gate Resistor
G
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
S
REJ03G1674-0100
Page 1 of 8
1. Gate
2. Drain
(Flange)
3. Source
Rev.1.00
May 19, 2008
HAF2027(L), HAF2027(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Cannel dissipation
Cannel temperature
Storage temperature
Symbol
VDSS
VGSS
VGSS
ID
ID (pulse) Note1
IDR
PchNote2
Tch
Tstg
Ratings
60
16
–2.5
50
100
50
100
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Notes: 1. PW ≤ 10ms, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Typical Operation Characteristics
(Ta=25°C)
Item
Symbol
VIH
VIL
Input voltage
IIH1
IIH2
Input current
(Gate non shut down)
IIL
IIH(sd)1
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
REJ03G1674-0100
Page 2 of 8
Rev.1.00
IIH(sd)2
Tsd
Vop
May 19, 2008
Min
3.5
Typ
—
Max
—
Unit
V
—
—
—
—
—
—
—
3.5
—
—
—
—
0.6
0.35
175
—
1.2
100
50
1
—
—
—
12
V
µA
µA
µA
mA
mA
°C
V
Test Conditions
Vi = 6 V, VDS = 0
Vi = 3.5 V, VDS = 0
Vi = 1.2 V, VDS = 0
Vi = 6 V, VDS = 0
Vi = 3.5 V, VDS = 0
Cannel temperature
HAF2027(L), HAF2027(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
ID1
ID2
ID3
Drain to source breakdown
voltage
V(BR)DSS
Gate to source breakdown
voltage
V(BR)GSS
Gate to source leak current
Input current (shut down)
Zero gate voltage drain
current
Gate to source cut off voltage
Forward transfer admittance
Min
80
15
—
60
Typ
—
—
—
—
Max
—
—
10
—
Unit
A
A
mA
V
Test Conditions
VGS = 6 V, VDS = 10 V Note3
VGS = 3.5 V, VDS = 10 V Note3
VGS = 1.2 V, VDS = 10 V Note3
ID = 10 mA, VGS = 0
IDSS
16
–2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
0.6
0.35
—
—
—
100
50
1
–100
—
—
10
V
V
µA
µA
µA
µA
mA
mA
µA
IG = 300 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = 6 V, VDS = 0
VGS = 3.5 V, VDS = 0
VGS = 1.2 V, VDS = 0
VGS = –2.4 V, VDS = 0
VGS = 6 V, VDS = 0
VGS = 3.5 V, VDS = 0
VDS = 60 V, VGS = 0
VGS(off)
|yfs|
1.0
15
—
65
2.25
—
V
S
RDS(on)
7.7
10.3
1423
10
48
22
23
0.9
10
15
—
—
—
—
—
—
mΩ
mΩ
pF
µs
µs
µs
µs
V
ID = 25 A, VGS = 10 V Note3
ID = 25 A, VGS = 4 V Note3
VDS = 10 V, VGS = 0, f = 1MHz
VGS = 10 V, ID= 25 A, RL = 1.2 Ω
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
VDS = 10 V, ID = 1 mA
ID = 25 A, VDS = 10 V Note3
Body-drain diode forward
voltage
VDF
—
—
—
—
—
—
—
—
Body-drain diode reverse
recovery time
trr
—
102
—
ns
IF = 50 A, VGS = 0, diF/dt = 100 A/µs
tos1
—
—
0.7
0.43
—
—
ms
ms
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn off delay time
Fall time
Over load shut down
Note4
operation time
RDS(on)
Coss
td(on)
tr
td(off)
tf
tos2
Notes: 3. Pulse test
4. Including the junction temperature rise of the over lorded condition.
REJ03G1674-0100
Page 3 of 8
Rev.1.00
May 21, 2008
IF = 50 A, VGS = 0
HAF2027(L), HAF2027(S)
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
1000
s
m
=
10
10
=
Operation
in this area
is limited RDS(on)
°
25
C)
1
m
s
c
(T
50
PW
n
tio
ra
pe
100
100
1
150
O
Drain Current ID (A)
Thermal shut down operation area
DC
Channel Dissipation Pch (W)
200
Ta = 25°C
0
50
200
100
150
0.1
0.01
200
0.1
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
8V
100
6V
Pulse Test
150
5V
100
4V
VGS = 3.5 V
50
Drain Current ID (A)
Drain Current ID (A)
10 V
Tc = -25°C
75
25°C
50
75°C
25
VDS = 10 V
Pulse Test
2
4
6
8
0
10
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source State Resistance
vs. Drain Current
1200
Pulse Test
1000
800
600
ID = 50 A
400
25 A
200
10 A
0
2
4
6
8
10
12
Gate to Source Voltage VGS (V)
REJ03G1674-0100
Page 4 of 8
Rev.1.00
May 19, 2008
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
VDS(on) (mV)
0
1000
100
VGS = 4 V
10
VGS = 10 V
Pulse Test
1
0.1
1
10
Drain Current ID (A)
100
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
25 A
15
ID = 10 A
25 A
10
VGS = 4 V
ID = 10 A
VGS = 10 V
5
-50 -25
1000
0
25
50
75 100 125 150
1000
VDS = 10 V
Pulse Test
100
Tc = -25°C
10
25°C
75°C
1
0.1
0.01
0.001
0.0001
0.0001 0.001 0.01
0.1
1
10
Case Temperature Tc (°C)
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Switching Characteristics
100
100
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
tr
100
tf
td(off)
10
td(on)
VGS = 10 V, VDD = 30 V
PW = 300 µs, duty ≤ 1 %
10
1
10
1
0.1
100
1
10
100
Case Temperature IDR (A)
Drain Current ID (A)
Reverse Drain Current vs.
Source to Drain Voltage
Typical Capacitance vs.
Drain to Source Voltage
50
10000
5V
VGS = 0 V
40
30
Capacitance C (pF)
Reverse Drain Current IDR (A)
Forward Transfer Admittance |yfs| (S)
20
Forward Transfer Admittance vs.
Drain Current
Switching Time t (µs)
Reverse Recovery Time trr (ns)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
HAF2027(L), HAF2027(S)
10 V
20
10
Pulse Test
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
REJ03G1674-0100
Page 5 of 8
Rev.1.00
May 19, 2008
1000
Coss
VGS = 0
f = 1 MHz
100
0
10
20
30
40
50
60
Drain to Source Voltage VDS (V)
HAF2027(L), HAF2027(S)
Shutdown Case Temperature vs.
Gate to Source Voltage
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage VGS (V)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
15
VDD = 16 V
10
24 V
5
0
0.00001
0.0001
0.001
0.01
200
180
160
140
120
ID = 5 A
100
0
Shutdown Time of Load-Short Test Pw (S)
2
4
6
8
10
Gate to Source Voltage VGS (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
θ ch- c(t) = γ s (t) • θ ch- c
θ ch- c = 1.25°C/W, Tc = 25°C
0.05
0.02
0.03
PDM
1
0.0
0.01
10 µ
PW
T
PW
e
uls
p
ot
T
h
1s
D=
100 µ
1m
100 m
10 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
RL
Vin
Vout
Vin
10V
50 Ω
VDD
= 30 V
Rev.1.00
May 19, 2008
10%
10%
90%
td(on)
REJ03G1674-0100
Page 6 of 8
10%
tr
90%
td(off)
tf
HAF2027(L), HAF2027(S)
Package Dimensions
Previous Code
LDPAK(L) / LDPAK(L)V
RENESAS Code
PRSS0004AE-A
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
JEITA Package Code
SC-83
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
Package Name
LDPAK(S)-(1)
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
MASS[Typ.]
1.40g
RENESAS Code
PRSS0004AE-B
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
1.30g
10.0
(1.5)
REJ03G1674-0100
Page 7 of 8
Rev.1.00
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
May 19, 2008
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
JEITA Package Code

(1.4)
Package Name
LDPAK(L)
2.2
HAF2027(L), HAF2027(S)
Ordering Information
Part No.
HAF2027-90STL-E
HAF2027-90STR-E
REJ03G1674-0100
Page 8 of 8
Quantity
1000 pcs/Reel
1000 pcs/Reel
Rev.1.00
May 19, 2008
Shipping Container
Taping (Reel)
Taping (Reel)
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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