Diodes B1100 1.0a surface mount schottky barrier rectifier Datasheet

B170/B - B1100/B
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 30A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260°C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
B
A
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Max
Min
Max
A
2.29
2.92
3.30
3.94
B
4.00
4.60
4.06
4.57
C
1.27
1.63
1.96
2.21
C
J
G
E
H
Case: SMA / SMB, Molded Plastic
Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Mounting Position: Any
Marking: Type Number
SMB
Min
D
Mechanical Data
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SMA
Dim
D
0.15
0.31
0.15
0.31
E
4.80
5.59
5.00
5.59
G
0.10
0.20
0.10
0.20
H
0.76
1.52
0.76
1.52
J
2.01
2.62
2.00
2.62
All Dimensions in mm
No Suffix Designates SMA Package
“B” Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics
@ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 125°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Symbol
B170/B
B180/B
B190/B
B1100/B
Unit
VRRM
VRWM
VR
70
80
90
100
V
VR(RMS)
49
56
63
70
V
IO
1.0
A
IFSM
30
A
Forward Voltage @ IF = 1.0A
@ TA = 25°C
@ TA = 100°C
VFM
0.79
0.69
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TA = 25°C
@ TA = 100°C
IRM
0.5
5.0
mA
Cj
80
pF
RqJT
25
K/W
Tj, TSTG
-65 to +150
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Terminal (Note 1)
Operating and Storage Temperature Range
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30018 Rev. B-2
1 of 2
B170/B - B1100/B
IF, INSTANTANEOUS FORWARD CURRENT (A)
I(AV), AVERAGE FORWARD CURRENT (A)
1.0
0.5
0
25
50
75
100
125
150
10
1.0
0.1
0
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
0.2
0.4
0.6
0.8
1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
1000
40
Single Half Sine-Wave
(JEDEC Method)
Cj, JUNCTION CAPACITANCE (pF)
IFSM, PEAK FORWARD SURGE CURRENT (A)
Tj - 25°C
IF Pulse Width = 300µs
0.01
30
20
10
Tj = 25°C
f = 1.0MHz
100
Tj = 150°C
0
10
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
DS30018 Rev. B-2
0.1
2 of 2
B170/B - B1100/B
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