Infineon BA892 Silicon rf switching diode Datasheet

BA592/BA892...
Silicon RF Switching Diode
For band switching in TV/VTR tuners
and mobile applications
Very low forward resistance (typ. 0.45 @ 3 mA)
small capacitance
BA592
BA892/-02L
BA892-02V
1
2
Type
BA592
BA892
BA892-02L
BA892-02V
Package
SOD323
SCD80
TSLP-2-1
SC79
Configuration
single
single
single, leadless
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
LS(nH)
1.8
0.6
0.4
0.6
Value
Marking
blue S
AA
AA
A
Unit
Diode reverse voltage
VR
35
V
Forward current
IF
100
mA
Junction temperature
Tj
150
°C
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Unit
K/W
135
120
70
BA592
BA892, BA892-02V
BA892-02L
1For
Value
calculation of RthJA please refer to Application Note Thermal Resistance
1
Feb-04-2003
BA592/BA892...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
20
nA
VF
-
-
1
V
DC Characteristics
Reverse current
VR = 20 V
Forward voltage
IF = 100 mA
AC Characteristics
Diode capacitance
pF
CT
VR = 1 V, f = 1 MHz
0.65
0.92
1.4
VR = 3 V, f = 1 MHz
0.6
0.85
1.1
-
1
-
-
100
-
VR = 0 V, f = 100 MHz
Reverse parallel resistance
RP
k
VR = 0 V, f = 100 MHz
Forward resistance
rf
IF = 3 mA, f = 100 MHz
-
0.45
0.7
IF = 10 mA, f = 100 MHz
-
0.36
0.5
rr
-
120
-
ns
I-region width
WI
-
3
-
µm
Insertion loss1)
|S21|2
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3mA,
RL = 100 dB
IF = 0.1 mA, f = 1 GHz
-
-0.1
-
IF = 3 mA, f = 1 GHz
-
-0.05
-
IF = 10 mA, f = 1 GHz
-
-0.04
-
VR = 0 V, f = 100 MHz
-
-23.5
-
VR = 0 V, f = 470 MHz
-
-10.5
-
VR = 0 V, f = 1 GHz
-
-5.5
-
Isolation1)
1BA892-02L
|S21|2
in series configuration, Z = 50
2
Feb-04-2003
BA592/BA892...
Diode capacitance CT = (VR )
Reverse parallel resistance RP = (VR )
f = Parameter
f = Parameter
10 3
2
KOhm
100 MHz
pF
Rp
CT
10 2
1.2
10 1
1 GHz
1 MHz ... 1 GHz
0.8
10 0
0.4
0
0
5
10
15
V
20
10 -1
0
30
5
10
15
20
V
VR
Forward resistance rf = (I F)
Forward current IF = (VF)
f = 100MHz
TA = Parameter
10
2
10 0
A
Ohm
10 -1
1
10 -2
rf
IF
10
30
VR
10 -3
10
0
-40 °C
25 °C
85 °C
125 °C
10 -4
10 -5
10
-1
10
-2
10
-1
10
0
10
1
10 -6
0
mA 10 2
IF
0.2
0.4
0.6
0.8
V
1.2
VF
3
Feb-04-2003
BA592/BA892...
Insertion loss |S21 |2 = (f)
Isolation |S21 |2 = (f)
IF = Parameter
VR = Paramter
BA892-02L in series configuration, Z = 50
BA892-02L in series configuration, Z = 50
0
0
dB
|S21|2
|S21|2
dB
10 mA
3 mA
1 mA
0.1 mA
-0.2
-10
0V
1V
10 V
-15
-20
-0.3
-25
-0.4
0
0.5
1
1.5
2
GHz
-30
0
3
f
0.5
1
1.5
2
GHz
3
f
4
Feb-04-2003
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