Renesas HAF2017-90STL Silicon n channel power mosfet power switching Datasheet

HAF2017(L), HAF2017(S)
Silicon N Channel Power MOS FET
Power Switching
REJ03G0234-0200Z
(Previous ADE-208-1637 (Z))
Rev.2.00
Apr.13.2004
Descriptions
This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in
over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
•
•
•
•
Logic level operation (4 to 6 V Gate drive)
High endurance capability against to the short circuit
Built-in the over temperature shutdown circuit
Latch type shutdown operation (Need 0 voltage recovery)
Outline
D
LDPAK(L)
LDPAK(S)-1
4
4
Gate Resistor
G
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shutdown
Circuit
1
1
S
Rev.2.00, Apr.13.2004, page 1 of 8
2
3
2
3
1. Gate
2. Drain
3. Source
4. Drain
HAF2017(L), HAF2017(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Rating
Unit
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
VDSS
VGSS
VGSS
ID
60
16
–2.5
20
V
V
V
A
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
ID (pulse)
IDR
PchNote2
Tch
Tstg
40
20
50
150
–55 to +150
A
A
W
°C
°C
Note1
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. Value at Tch = 25°C
Typical Operation Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Input voltage
VIH
Input voltage
Input current (Gate non shut down)
Input current (Gate non shut down)
Input current (Gate non shut down)
Input current (Gate shut down)
Input current (Gate shut down)
Shutdown temperature
Gate operation voltage
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
VOP
3.5
—
—
—
—
—
—
—
3.5
—
—
—
—
—
0.8
0.35
175
—
—
1.2
100
50
1
—
—
—
12
V
V
µA
µA
µA
mA
mA
°C
V
Rev.2.00, Apr.13.2004, page 2 of 8
Test Conditions
Vi = 8V, VDS =0
Vi = 3.5V, VDS =0
Vi = 1.2V, VDS =0
Vi = 8V, VDS =0
Vi = 3.5V, VDS =0
Channel temperature
HAF2017(L), HAF2017(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Darin current
Darin current
Drain to source breakdown voltage
Gate to source breakdown
voltage
Gate to source leak current
ID1
ID2
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
VGS(off)
|yfs|
RDS(on)
RDS(on)
Coss
td(on)
tr
td(off)
tf
VDF
trr
1
—
60
16
–2.5
—
—
—
—
—
—
—
1.4
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
21
35
27
460
8.7
44.6
2
2.6
0.9
120
—
10
—
—
—
100
50
1
–100
—
—
10
2.6
—
53
43
―
―
—
―
—
—
—
A
mA
V
V
V
µA
µA
µA
µA
mA
mA
µA
V
S
mΩ
mΩ
pF
µs
µs
µs
µs
V
ns
VGS = 3.5 V, VDS = 2 V
VGS = 1.2 V, VDS = 2 V
ID = 10 mA, VGS =0
IG = 800 µA, VDS =0
IG = –100 µA, VDS =0
VGS = 8 V, VDS =0
VGS = 3.5 V, VDS =0
VGS = 1.2 V, VDS =0
VGS = –2.4 V, VDS =0
VGS = 8 V, VDS =0
VGS = 3.5 V, VDS =0
VDS = 60 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID =10 A, VDS =10 VNote3
ID = 10 A, VGS = 4.5 VNote3
ID = 10 A, VGS = 10 VNote3
VDS = 10 V, VGS =0, f = 1 MHz
VGS = 5 V, ID= 10 A, RL = 3 Ω
tos1
tos2
—
—
0.97
0.57
—
—
ms
ms
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Over load shut down operation
timeNote4
IF = 20A, VGS = 0
IF = 20 A, VGS = 0,
diF/dt = 50 A/µs
VGS = 5 V, VDD = 16 V
VGS = 5 V, VDD = 24 V
Notes: 3. Pulse test
4. Include the time shift based on increasing of channel temperature when operate under over load condition.
Rev.2.00, Apr.13.2004, page 3 of 8
HAF2017(L), HAF2017(S)
Main Characteristics
Power vs. Temperature Derating
Thermal shut down
operation area
60
40
20
0
50
100
150
100
10
50
0
20
1
10
0.5 Ta = 25°C
0.3
0.5 1 2
VDS = 10 V
Pulse Test
5V
4V
20
VGS = 3.5 V
10
2
4
6
Drain to Source Voltage
Drain to Source Saturation Voltage
VDS(on) (V)
Pulse Test
0.8
ID = 20 A
0.6
0.4
10 A
0.2
5A
2
4
6
Gate to Source Voltage
Rev.2.00, Apr.13.2004, page 4 of 8
8
10
VGS (V)
30 Tc = -25°C
25°C
20
75°C
10
0
8
10
VDS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Drain Current ID (A)
6V
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Drain Current ID (A)
40
30
0
50 100
Typical Transfer Characteristics
40
0
10 20
50
Pulse Test
8V
5
Drain to Source voltage VDS (V)
Typical Output Characteristics
10 V
m
s
Case Temperature Tc (°C)
50
µs
PW
DC = 1
0
(T O
c = pe ms
25 ratio
°C
) n
5 Operation
in this area
2
is limited RDS(on)
1
200
µs
Drain Current ID (A)
200
10
Channel Dissipation Pch (W)
Maximum Safe Operation Area
500
80
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source State Resistance
vs. Drain Current
1000
300
100
VGS = 4.5 V
30
VGS = 10 V
10
3
Pulse Test
1
0.1
0.3
1
3
10
30
Drain Current ID (A)
100
Static Drain to Source on State Resistance
vs. Temperature
100
Pulse Test
80
ID = 20 A
10 A
60
40
5A
VGS = 4.5 V
20
0
-25
ID = 20 A
5A
10 A
VGS = 10 V
0
25
50
75
Forward Transfer Admittance |yfs| (S)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
HAF2017(L), HAF2017(S)
100 125 150
Case Temperature
Forward Transfer Admittance vs.
Drain Current
100
VDS = 10 V
Pulse Teat
10
25°C
1
75°C
0.1
0.01
0.01
100
Switching Characteristics
Switching Time t (µs)
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
100
50
V GS = 5 V, V DD = 30 V
50 PW = 300 µs, duty < 1 %
tr
20
t d(on)
10
5
tf
20
2
10
0.1
1
0.1
0.3
1
3
10
30
100
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
t d(off)
0.3
1
3
10
30
Drain Current ID (A)
100
Typical Capacitance vs.
Drain to Source Voltage
10000
Pulse Test
40
Capacitance C (pF)
Reverse Recovery Time trr (ns)
10
100
200
Reverse Drain Current IDR (A)
1
Drain Current ID (A)
1000
50
0.1
Tc (°C)
Body-Drain Diode Reverse
Recovery Time
500
Tc = -25°C
30
VGS = 0 V
20
10
0
10 V
1000
Coss
100
5V
VGS = 0
f = 1 MHz
10
0.4
0.8
1.2
Source to Drain Voltage
Rev.2.00, Apr.13.2004, page 5 of 8
1.6
2.0
VDS (V)
0
10
20
30
40
50
60
Drain to Source Voltage VDS (V)
HAF2017(L), HAF2017(S)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Shutdown Case Temperature vs.
Gate to Source Voltage
200
10
VDD = 16 V
24 V
5
0
100µ
1m
10m
100m
Shutdown Case Temperature Tc (°C)
Gate to Source Voltage
VGS (V)
12
Shutdown Time of Load-Short Test Pw (S)
180
160
140
120
ID = 5 A
100
0
2
4
6
8
Gate to Source Voltage
10
VGS (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
0.1
θch - c(t) = γs (t) • θch - c
θch - c = 2.5°C/W, Tc = 25°C
0.05
0.02
0.03
PDM
1
e
0.0
uls
tp
o
h
1s
0.01
10 µ
100 µ
PW
T
PW
T
1m
10 m
Pulse Width PW (S)
Rev.2.00, Apr.13.2004, page 6 of 8
D=
100 m
1
10
HAF2017(L), HAF2017(S)
Package Dimensions
As of January, 2003
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
(1.4)
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
0.4 ± 0.1
Package Code
JEDEC
JEITA
Mass (reference value)
LDPAK (L)
—
—
1.40 g
As of January, 2003
Unit: mm
(1.5)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
7.8
6.6
1.3 ± 0.15
1.7
(1.4)
4.44 ± 0.2
10.2 ± 0.3
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
1.3 ± 0.2
Package Code
JEDEC
JEITA
Mass (reference value)
Rev.2.00, Apr.13.2004, page 7 of 8
LDPAK (S)-(1)
—
—
1.30 g
HAF2017(L), HAF2017(S)
Ordering Information
Part Name
Quantity
Shipping Container
HAF2017-90L
HAF2017-90S
HAF2017-90STL
HAF2017-90STR
Max: 50 pcs/ sack
Max: 50 pcs/ sack
1000 pcs/ Reel
1000 pcs/ Reel
Sack
Sack
Embossed tape
Embossed tape
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00, Apr.13.2004, page 8 of 8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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