To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry. Notice 1. 2. 3. 4. 5. 6. 7. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 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Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. 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The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE OUTLINE DRAWING CR8AM Dimensions in mm 3.2±0.2 4.5 1.3 4 7.0 16 MAX 10.5 MAX ∗ TYPE NAME VOLTAGE CLASS φ3.6±0.2 12.5 MIN 3.8 MAX 1.0 0.8 2.5 0.5 2.6 4.5 2.5 ∗ 123 24 3 • IT (AV) ........................................................................... 8A • VDRM ..............................................................400V/600V • IGT ..........................................................................15mA 1 1 2 3 4 Measurement point of case temperature CATHODE ANODE GATE ANODE TO-220 APPLICATION Switching mode power supply, ECR, regulator for autocycle, motor control MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VRRM Repetitive peak reverse voltage 400 600 V VRSM Non-repetitive peak reverse voltage 500 720 V VR (DC) DC reverse voltage 320 480 V VDRM Repetitive peak off-state voltage 400 600 V VD (DC) DC off-state voltage 320 480 V Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180° conduction, Tc =88°C ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VFGM for fusing Ratings Unit 12.6 A 8 A 120 A 60 A2s 5 W 0.5 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 10 V IFGM Peak gate forward current 2 Tj Junction temperature Storage temperature Tstg — Weight Typical value A –40 ~ +125 °C –40 ~ +125 °C 2.0 g Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Parameter Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125°C, V RRM applied — — 2.0 mA IDRM Repetitive peak off-state current Tj=125°C, V DRM applied — — 2.0 mA VTM On-state voltage Tc=25°C, ITM =25A, instantaneous value — — 1.4 V VGT Gate trigger voltage Tj=25°C, VD=6V, IT=1A — — 1.0 V VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.2 — — V IGT Gate trigger current Tj=25°C, VD=6V, IT=1A — — 15 mA IH Holding current Tj=25°C, VD=12V — 15 — mA R th (j-c) Thermal resistance Junction to case — — 3.0 °C/W ✽1. The contact thermal resistance R th (c-f) is 1.0°C/W with greased. MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 125°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 ON-STATE VOLTAGE (V) 5 RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) VFGM = 6V 101 7 5 3 2 PGM = 5W PG(AV) = 0.5W VGT = 1V 100 7 5 3 2 IGT = 15mA VGD = 0.2V IFGM = 2A 10–1 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, 1.0 GATE TRIGGER VOLTAGE (V) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 102 7 5 3 2 DISTRIBUTION 0.9 TYPICAL EXAMPLE 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 –40 –20 0 20 40 60 80 100 120 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE VOLTAGE (V) GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 10–2 10–3 2 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 TIME (s) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 32 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 200 28 180 24 θ = 30° 60° 90° 120° 180° 20 16 12 8 θ 4 360° 0 0 RESISTIVE, INDUCTIVE LOADS 2 4 6 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) JUNCTION TEMPERATURE (°C) θ 160 360° RESISTIVE, INDUCTIVE LOADS 140 120 100 80 60 40 θ = 30° 60° 90° 120° 180° 20 0 0 1 2 3 4 5 6 7 8 9 10 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR8AM MEDIUM POWER USE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 32 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 200 28 180 24 θ = 30° 60° 90° 120° 20 16 180° 12 8 θ 360° 4 0 θ 0 2 4 6 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) NON-INSULATED TYPE, GLASS PASSIVATION TYPE θ 360° 140 RESISTIVE LOADS 120 100 80 θ = 30° 60 90° 180° 60° 120° 40 20 RESISTIVE LOADS 8 10 12 14 16 0 AVERAGE ON-STATE CURRENT (A) 0 2 4 6 8 10 12 14 16 18 20 AVERAGE ON-STATE CURRENT (A) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 32 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 200 28 180 24 120° 180° θ = 30° 60° 90° 270° 20 16 DC 12 8 θ 4 0 0 2 4 RESISTIVE, 360° INDUCTIVE LOADS 6 8 10 12 14 CASE TEMPERATURE (°C) AVERAGE POWER DISSIPATION (W) θ 160 120 100 80 DC 60° 120° 270° 40 TYPICAL EXAMPLE 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 100 0 2 4 6 8 10 12 14 16 18 20 AVERAGE ON-STATE CURRENT (A) 100 (%) 100 (%) BREAKOVER VOLTAGE (T j = t°C) BREAKOVER VOLTAGE (T j = 25°C ) θ = 30° 90° 180° 60 0 16 140 JUNCTION TEMPERATURE (°C) RESISTIVE, INDUCTIVE LOADS 20 BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 120 360° 140 AVERAGE ON-STATE CURRENT (A) 160 θ 160 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125°C TYPICAL 140 EXAMPLE 120 IGT (25°C) # 1 4.7mA 100 # 2 7.2mA 80 #2 60 40 #1 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE HOLDING CURRENT VS. GATE TRIGGER CURRENT 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 50 45 DISTRIBUTION ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, TYPICAL EXAMPLE HOLDING CURRENT (mA) HOLDING CURRENT (mA) HOLDING CURRENT VS. JUNCTION TEMPERATURE 15 10 0 0 2 4 6 8 10 12 14 16 18 20 TURN-OFF TIME VS. JUNCTION TEMPERATURE VD = 100V RL = 12Ω Ta = 25°C TYPICAL EXAMPLE IGT (25°C) # 5.2mA 4.0 3.5 3.0 2.5 # 1.5 ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, 80 TYPICAL EXAMPLE 70 TURN-OFF TIME (µs) TURN-ON TIME (µs) 20 TURN-ON TIME VS. GATE CURRENT 1.0 60 50 40 30 DISTRIBUTION 20 10 0.5 0 0 10 20 30 40 50 60 70 80 90 100 0 20 IT = 8A, –di/dt = 5A/µs, VD = 300V, dv/dt = 20V/µs VR = 50V 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 120 100 (%) GATE CURRENT (mA) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, 25 GATE TRIGGER CURRENT (mA) 4.5 REPETITIVE PEAK REVERSE VOLTAGE (Tj = t°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) 30 JUNCTION TEMPERATURE (°C) 5.0 0 35 5 100 –40 –20 0 20 40 60 80 100 120 140 160 2.0 40 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 104 7 TYPICAL EXAMPLE 5 3 2 tw 0.1s 103 7 5 3 2 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (µs) Feb.1999