, One. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ900 - MJ901 PNP MJ1000 - MJ1001 NPN COMPLEMENTARY POWER DARLINGTONS The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types are the MJ1000 and MJ1001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value MJ900 VCBO Collector-Base Voltage Collector-EmitterVoltage ; IB=0 ! VEBO Emitter-Base Voltage Ic Collector Current 60 Vdc , i MJ1001 MJ900 VCEO ' |C(RM8) Unit 80 60 Vdc ;Mj901 MJ1001 MJ900 80 JMPPP MJ901 MJ1001 MJ900 5.0 Vdc MJ901° 8.0 Adc MJ1001 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors entourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors MJ900 - MJ901 PNP MJ1000 - MJ1001 NPN Ratings Symbol Value Unit 0.1 Adc 90 Watts 0.515 W/°C -65 to +200 °C MJ900 Ba- Current IB ..JJWW MJ1001 MJ900 i @ Tc < 25° Power Dissipation PT K '••- t I j^l^ Derate above MJ901 25°C MJ1001 MJ900 Junction Temperature Tj MJ901 MJ1001 MJ900 Storage Temperature Ts MJ901° MJ1001 THERMAL CHARACTERISTICS Ratings Symbol Value Unit 1.94 °c/w MJ900 RthJ-C Thermal Resistance, Junction to Case . • . Mjyui MJ1001 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO I,. « ICEO Ratings Collector-Emitter Breakdown Voltage (*) Collector Cutoff Current Test Condition(s) lc=100 mAdc, IB=0 Vce=30Vdc,, B =0 Min Typ MX MJ900 MJ1000 60 MJ901 MJ1001 80 jJIJI", - - Vdc Kflf) VcE=40Vdc,,e=0 IJJJIJ, Unit - - MJ900 - MJ901 PNP MJ1000 -MJ1001 NPN Symbol IEBO Ratings Test Condition(s) i \. Emitter Cutoff Current ,„,,.„. n VBE=5.0 VdC, lc=0 Min Typ MX i MJ900 |MJ1000 : MJ901 ; MJ1001 - - UJj JiQOO - - VCB=60 V, RBE=1 .0 k ohm 2.0 Unit mAdc 1.0 ICER Collector-Emitter Leakage VCB=80 V, RBE=1.0 k ohm |MJ1Q01 Current VCB=60 V, RBE=1 .0 k ohm, Tc=150°C MJ900 MJ1000 i VCB=80 V, RBE=1 .0 k ohm, | MJ901 jTc=150°C |MJ1001 . . V CE(SAT) ! lc=3.0 A, IB=12 mAdc Collector-Emitter saturation , , .. ,A, I MJ900 MJ1000 mAdc _ _ - - 5.0 2.0 DM?™* ; MJ1UU1 \/Hn j MJ900 lc=8.0 A, IB=40 mAdc • Mj901 - - 4.0 MJ1001 Symbol VF VBE Ratings Forward Voltage (pulse method) Base-Emitter Voltage (*) Test Condition(s) | i F , . . . . .. , „.. . : lc=3.0AdC,VcE=3.0Vdc MJ900 MJ1000 i MJ901 i MJ1001 MJ900 MJ1000 |MJ9Q1 Min Typ MX - 1.8 - V - - 2.5 V 1000 - - 750 - - ! MJ1001 MJ900 VCE=3.0 Vdc, lc=3.0 Adc FE HP Pain (t*\) uo Piirrant Current bain i —•—•?. l_!Y:__?_::_r_J, MJQQQ I VCE=3.0 Vdc, lc=4.0 Adc | JJJJJJ° IMJ1001 (*) Pulse Width » 300 ^s, Duty Cycle Z 2.0% Unit MJ900 - MJ901 PNP MJ1000-MJ1001 NPN MECHANICAL DATA CASE TO-3 DIMENSIONS mm inches A 25,51 1,004 B 1,53 38,93 C 30,12 1,18 D 0,68 17,25 E 10,89 0,43 11,62 G 0,46 8,54 0,34 H L 1,55 0,6 19,47 M 0,77 N 1 0,04 P 0,16 4,06 Pin 1 : Pin 2: Case : Base Emitter Collector - « vy L