LRC LMBT2222ATT1G General purpose transistor Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
NPN Silicon
LMBT2222ATT1G
3
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−89 package which
is designed for low power surface mount applications.
1
2
Features
• We declare that the material of product compliance with RoHS requirements.
SC-89
ORDERING INFORMATION
Device
COLLECTOR
3
†
Shipping
Maring
LMBT2222ATT1G
1P
3000 / Tape & Reel
LMBT2222ATT3G
1P
10000 / Tape & Reel
1
BASE
2
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Symbol
Max
Unit
Collector−Emitter Voltage
VCEO
40
Vdc
Collector−Base Voltage
VCBO
75
Vdc
Emitter−Base Voltage
VEBO
6.0
Vdc
IC
600
mAdc
Symbol
Max
Unit
PD
150
mW
RqJA
833
°C/W
TJ, Tstg
−55 to +150
°C
Rating
Collector Current − Continuous
MARKING DIAGRAM
1P M G
G
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
TA = 25°C
Thermal Resistance,
Junction−to−Ambient
Operating and Storage Junction
Temperature Range
1
1P
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
75
−
Vdc
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
Base Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
IBL
−
20
nAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 3.0 Vdc)
ICEX
−
100
nAdc
Characteristic
OFF CHARACTERISTICS
1/3
LESHAN RADIO COMPANY, LTD.
LMBT2222ATT1G
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
HFE
−
35
50
75
100
40
−
−
−
−
−
−
−
0.3
1.0
0.6
−
1.2
2.0
fT
250
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
pF
Input Impedance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hie
0.25
1.25
kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
−
4.0
X 10− 4
Small −Signal Current Gain
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hfe
75
375
−
Output Admittance
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hoe
25
200
mmhos
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
NF
−
4.0
dB
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc)
td
−
10
tr
−
25
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc)
ts
−
225
tf
−
60
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2/3
LESHAN RADIO COMPANY, LTD.
LMBT2222ATT1G
SC-89
A
-X-
3
1
2
B -Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
S
K
G
2 PL
D
0.08 (0.003)
M
DIM
A
B
C
D
G
H
J
K
L
M
N
S
3 PL
X Y
N
M
C
J
-T-
H
MILLIMETERS
MIN
NOM
MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10 −−−
−−−
10 1.50
1.60
1.70
MIN
0.059
0.030
0.024
0.009
0.004
0.012
−−−
−−−
0.059
INCHES
NOM
0.063
0.034
0.028
0.011
0.020 BSC
0.021 REF
0.006
0.016
0.043 REF
−−−
−−−
0.063
MAX
0.067
0.040
0.031
0.013
0.008
0.020
10 10 0.067
SEATING
PLANE
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
3/3
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