OKI MSM27V3255CZ 1,048,576-double word x 32-bit or 2,097,152-word x 16-bit 4-double word x 32-bit or 8-word x 16-bit page mode one time prom Datasheet

¡ Semiconductor
1A
MSM27V3255CZ
1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit
4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
DESCRIPTION
The MSM27V3255CZ is a 32Mbit electrically Programmable Read-Only Memory with page mode. Its
configuration can be electrically switched between 1,048,576 double word x 32bit and 2,097,152
word x 16bit. The MSM27V3255CZ operates on a single +3.3V power supply and is TTL compatible.
The MSM27V3255CZ provides Page mode which can greatly reduce the read access time. Since the
MSM27V3255CZ operates asynchronously , external clocks are not required , making this device
easy-to-use. The MSM27V3255CZ is suitable as large-capacity fixed memory for microcomputers
and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in
70-pin SSOP package.
FEATURES
• 1,048,576 double word x 32bit / 2,097,152 word x 16bit electrically switchable configuration
• Single +3.3V power supply
• Access time 100ns
Page mode access time 30ns
• Input / Output TTL compatible
• Three-state output
• Packages
70-pin plastic SSOP (SSOP70-P-500-0.80-K)
October 1998
1
MSM27V3255CZ
PIN CONFIGURATION (TOP VIEW)
A0 1
70 VPP
A1 2
69 NC
A2 3
68 NC
A3 4
67 WORD
A4 5
66 OE
A5 6
VCC 7
65 CE
64 VSS
D0 8
63 D31/A-1
D16 9
62 D15
D1 10
61 D30
D17 11
VSS 12
VCC 13
60 D14
59 VSS
58 VCC
D2 14
57 D29
D18 15
56 D13
D3 16
55 D28
D19 17
54 D12
D4 18
53 D27
D20 19
52 D11
D5 20
51 D26
D21 21
VSS 22
VCC 23
50 D10
49 VSS
48 VCC
D6 24
47 D25
D22 25
D7 26
46 D9
PIN NAMES
FUNCTIONS
45 D24
D31/A-1
Data output / Address input
D23 27
VSS 28
44 D8
43 VCC
A0 - A19
Address input
D0 - D30
Data output
A6 29
42 A19
CE
Chip enable
A7 30
41 A18
Output enable
A8 31
40 A17
OE
VCC
A9 32
39 A16
VSS
GND
A10 33
38 A15
A11 34
37 A14
WORD
VPP
A12 35
36 A13
NC
Power supply voltage
Mode switch
Program power supply voltage
Non connection
70-pin SSOP
2
MSM27V3255CZ
BLOCK DIAGRAM
A-1
OE
WORD
CE
OE
PGM
Row Decoder
CE
Memory Matrix
1,048,576X32-Bit or 2,097,152X16-Bit
Column Decoder
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
A12
A13
A14
A15
A16
A17
A18
A19
Address Buffer
X16/X32 Switch
Multiplexer & Page Data Latch
Output Buffer
D30
D28
D26
D24
D22
D20
D18
D16
D14
D12
D10
D8
D6
D4
D2
D0
D31
D29
D27
D25
D23
D21
D19
D17
D15
D13
D11
D9
D7
D5
D3
D1
In 16-bit output mode, these pins are
three-stated and pin D31 functions
as the A-1 address pin.
FUNCTION TABLE
CE
OE
WORD
READ (32-Bit)
L
L
H
READ (16-Bit)
L
L
L
OUTPUT DISABLE
L
H
MODE
STAND-BY
H
*
PROGRAM
L
H
PROGRAM INHIBIT
H
H
PROGRAM VERIFY
* : Don't Care
H
L
H
L
VPP
*
VCC
D0 - D15
D16 - D30
DOUT
D31/A-1
DOUT
Hi-Z
L/H
Hi-Z
3.3V
*
H
Hi-Z
L
DIN
L
11.0V
Hi-Z
*
L/H
Hi-Z
5.0V
DOUT
Hi-Z
L/H
3
MSM27V3255CZ
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Operating temperature under bias
Topr
Storage temperature
Tstg
Condition
Output voltage
VO
Power supply voltage
Program power supply voltage
VCC
VPP
Power dissipation per package
PD
Unit
-55 to 125
°C
°C
-0.5 to VCC + 0.5
V
-0.5 to VCC + 0.5
V
-0.5 to 7
V
-
VI
Input voltage
Value
0 to 70
relative to VSS
-
-0.5 to 12.5
V
1.0
W
RECOMMENDED OPERATING CONDITIONS FOR READ
(Ta=0 to 70°C)
Parameter
Symbol
VCC power supply voltage
VCC
VPP power supply voltage
VPP
Input "H" level
VIH
Input "L" level
VIL
Condition
VCC=3.0V-3.6V
Min.
Typ.
Max.
3.0
3.6
Unit
V
-0.5
-
VCC+0.5
V
2.2
-
VCC+0.5
V
-0.5
-
0.6
V
Voltage is relative to Vss
4
MSM27V3255CZ
ELECTRICAL CHARACTERISTICS (Read operation)
DC Characteristics
(VCC=3.3V±0.3V, Ta=0 to 70°C)
Symbol
ILI
Condition
VI=0 to Vcc
Min.
-
Typ.
-
Max.
Output leakage current
ILO
VO=0 to Vcc
-
-
10
µA
VCC power supply current
(Standby)
ICS1
CE=VCC
50
CE=VIH
-
µA
ICS2
-
1
mA
-
-
80
mA
-
-
µA
Parameter
Input leakage current
10
Unit
µA
VCC power supply current
(Read)
ICCA
VPP power supply current
IPP
Input "H" level
VIH
-
2.2
-
10
VCC+0.5
Input "L" level
VIL
-
-0.5
-
0.6
V
Output "H" level
VOH
IOH=-400µA
-
-
V
Output "L" level
VOL
IOL=2.1mA
2.4
-
0.45
V
CE=VIL , OE=VIH
tc=100ns
VPP=VCC
V
Voltage is relative to Vss
AC Characteristics
(VCC=3.3V±0.3V, Ta=0 to 70°C)
Symbol
Condition
Min.
Max.
Unit
-
100
-
-
ns
Address access time
TC
TACC
100
ns
Page set up time
TPSET
120
-
ns
30
-
-
ns
30
ns
Parameter
Address access cycle time
CE=OE=VIL
NOTE(1)
-
Page access cycle time
TPC
Page access time
TPAC
TCE
TOE
OE=VIL
-
100
ns
CE=VIL
-
30
ns
TCHZ
OE=VIL
CE=VIL
0
0
30
TOHZ
TOH
CE=OE=VIL
0
ns
ns
ns
CE access time
OE access time
Output disable time
Output hold time
-
25
-
NOTE(1) TPSET is defined as the end of either CE trailing edge or address transition in random access
term until the first page address transition.
Measurement conditions
Input signal level
Input timing reference level
Output load
Output timing reference level
0V/3V
0.8V/2.0V
100pF
0.8V/2.0V
1.5V
400ohms
Output
100pF (including jig capacitance)
5
MSM27V3255CZ
TIMING CHART
NORMAL MODE READ CYCLE
tC
ADDRESS
tOH
tCE
CE
tCHZ
tOE
OE
tACC
tOHZ
Valid Data
DOUT
Hi-Z
Hi-Z
PAGE MODE READ CYCLE
tC
A2 - A19
tPSET
tPSET
tPC
tPC
A0 - A1 (X32 mode)
A-1 - A1 (X16 mode)
tOH
tCE
CE
tCHZ
tOE
OE
tACC
tPAC
tPAC
tOHZ
DOUT
Hi-Z
Hi-Z
6
MSM27V3255CZ
ELECTRICAL CHARACTERISTICS (Programming operation)
DC Characteristics
(Ta=25°C±5°C)
Symbol
ILI
Parameter
Input leakage current
VI=VCC+0.5V
Condition
Min.
-
Typ.
-
Max.
10
Unit
µA
VPP power supply current (Program)
IPP2
-
50
mA
ICC
CE=VIL
-
-
VCC power supply current
-
-
100
mA
Input "H" level
VIH
-
2.2
VCC+0.5
V
Input "L" level
VIL
-
-0.5
-
Output "H" level
VOH
IOH=-400µA
2.4
-
0.8
-
V
V
Output "L" level
VOL
-
-
0.45
V
Program voltage
VPP
IOL=2.1mA
-
11.0
11.25
V
VCC power supply voltage
VCC
-
10.75
4.75
5.0
5.25
V
Voltage is relative to Vss
AC Characteristics
(Vcc=5.0V±0.25V,Vpp=11.0V±0.25V,Ta=25°C±5°C)
Symbol
TAS
Condition
-
Min.
2
Typ.
-
Max.
-
Unit
µs
OE set-up time
Data set-up time
TOES
-
2
-
TDS
-
2
-
-
µs
µs
Address hold time
TAH
-
0
-
-
µs
Data hold time
Output float delay from OE
TDH
-
2
-
-
TDFP
0
-
130
µs
ns
VPP voltage set-up time
TVS
Program pulse width
TPW
Parameter
Address set-up time
Data valid from OE
TOE
Address hold from OE high
TAHO
-
2
-
-
µs
23
25
27
µs
-
-
-
150
0
ns
µs
-
PIN Capacitance
(VCC=3.3V, Ta=25°C, f=1MHz)
Parameter
Input
Output
Symbol
Condition
Min.
Typ.
Max.
CIN
VI=0V
VO=0V
-
12
COUT
-
15
Unit
pF
7
MSM27V3255CZ
Programming Waveforms ( I )
: Under High Speed Programming Algorithm ( I )
Program and Program Verify Cycle Waveforms
A-1 - A19
tAS
tAHO
tPW
CE
tOES
tDS
OE
tDFP
tDH
tOE
DIN
D0 - D15
DOUT
tVS
VPP
Program
Program Verify
Programming Waveforms ( II )
: Under High Speed Programming Algorithm ( II )
Consecutive Programming Waveforms
A-1 - A19
tAS
tAH
tPW
CE
High
OE
tDS
D0 - D15
tDH
Din
Din
tVS
VPP
8
MSM27V3255CZ
Consecutive Program Verify Waveforms
A-1 - A19
High
CE
tACC
tAHO
OE
tOE
tDFP
D0 - D15
Dout
Dout
11.0V
VPP
Program and Program Verify Cycle Waveforms
A-1 - A19
tAS
tAHO
tPW
CE
tOES
OE
tDFP
D0 - D15
tOE
tDH
tDS
Din
tDFP
Dout
11.0V
VPP
Program
Program Verify
9
MSM27V3255CZ
High Speed Programming Algorithm ( I )
Start
First Address
VCC=5.0V
VPP=11.0V
X=0
X=10 ?
YES
NO
Program 25µs
Increment Address
X=X+1
NG
Verify (One Byte)
PASS
NO
Last Address ?
YES
VCC=3.6V
VPP=3.6V
Compare All
NG
PASS
VCC=3.0V
VPP=3.0V
Compare All
NG
Device Failed
PASS
Device Passed
10
MSM27V3255CZ
High Speed Programming Algorithm ( II )
Start
First Address
VCC=5.0V
VPP=11.0V
Program 25µs
Increment Address
NO
Last Address ?
YES
First Address
X=0
Verify (One Byte)
NG
X=X+1
PASS
NO
Increment Address
YES
Last Address ?
X=10 ?
YES
NO
VCC=3.6V
VPP=3.6V
Compare All
Program 25µs
NG
PASS
VCC=3.0V
VPP=3.0V
Compare All
NG
PASS
Device Passed
Device Failed
11
Semiconductor
NOTICE
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The outline of action and examples for application circuits described herein have been chosen as an
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please ensure that the external conditions are reflected in the actual circuit, assembly, and program
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Copyright 1998 Oki Electric Industry Co., Ltd.
Marketing Communications Team (RB)
Page 1
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