IXYS IXFR200N10P Polar hiperfet power mosfet Datasheet

PolarTM HiPerFET
Power MOSFET
VDSS = 100 V
ID25 = 133 A
Ω
RDS(on) ≤ 9 mΩ
≤ 150 ns
tRR
IXFR 200N10P
Electrically Isolated Tab
N-Channel Enhancement Mode
Fast Recovery Diode, Avavanche Rated
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
100
V
VDGR
TJ = 25°C to 175°C; RGS = 1 MΩ
100
V
VGS
Continous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
133
A
ID(RMS)
External lead current limit
75
A
IDM
TC = 25°C, pulse width limited by TJM
400
A
IAR
TC = 25°C
60
A
EAR
TC = 25°C
100
mJ
EAS
TC = 25°C
4
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 4 Ω
10
V/ns
PD
TC = 25°C
300
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
2500
V~
20..120/4.6..20
Nm/lb
5
g
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS, 1 minute
FC
Mounting Force
Weight
ISOPLUS247 (IXFR)
E153432
G
z
z
z
VGS(th)
VDS = VGS, ID = 8 mA
3.0
IGSS
IDSS
RDS(on)
V
5.0
V
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = VDSS
VGS = 0 V
VGS = 0 V
25
250
1000
μA
μA
μA
9
mΩ
mΩ
TJ = 150°C
TJ = 175°C
VGS = 10 V, ID = 100 A, Note 1
VGS = 15 V, ID = 400A, Note 1
© 2006 IXYS All rights reserved
6.0
Fast recovery intrinsic diode
Avalanche voltage rated
Applications
DC-DC converters
z
100
D = Drain
z
Characteristic Values
Min. Typ.
Max.
VGS = 0 V, ID = 250 μA
ISOLATED TAB
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
Low drain to tab capacitance(<30pF)
z
BVDSS
S
G = Gate
S = Source
z
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
D
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
z
z
z
Space savings
High power density
DS99238E(03/06)
IXFR 200N10P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 100 A, Note 1
60
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
97
S
7600
pF
2900
pF
860
pF
Crss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A
td(off)
RG = 3.3 Ω (External)
30
ns
35
ns
150
ns
90
ns
235
nC
50
nC
135
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A
Qgd
RthJC
ISOPLUS247 Outline
0.5 K/W
RthCS
0.15
Source-Drain Diode
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
200
A
ISM
Repetitive
400
A
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
IF = 25 A, dI/dt = 100 A/μs
150 ns
QRM
VR = 50 V, VGS = 0 V
0.4
μC
6
A
IRM
Notes; 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6,771,478 B2
IXFR 200N10P
Fig. 1. Output Characte r is tics
@ 25ºC
Fig. 2. Exte nde d Output Characte r is tics
@ 25ºC
350
200
V GS = 10V
9V
175
V GS = 10V
300
9V
250
I D - Amperes
I D - Amperes
150
8V
125
100
75
7V
200
8V
150
7V
100
50
6V
25
50
0
6V
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1.6
0.5
1
1.5
Fig. 3. Output Characte r is tics
@ 150ºC
3
3.5
4
4.5
5
2.4
V GS = 10V
9V
V GS = 10V
2.2
150
R D S ( o n ) - Normalized
175
I D - Amperes
2.5
Fig. 4. RDS(on ) Norm alize d to ID = 100A
V alue vs . Junction Te m pe r atur e
200
8V
125
100
7V
75
6V
50
25
2
1.8
I D = 200A
1.6
1.4
I D = 100A
1.2
1
0.8
5V
0
0.6
0
0.5
1
1.5
2
2.5
3
3.5
-50
-25
0
V D S - V olts
90
2.2
80
TJ = 175 ºC
I D - Amperes
1.6
V GS = 10V
V GS = 15V - - - -
1.2
75
100
125
150
175
TJ = 25 ºC
1
Ex ternal Lead Current limit
70
1.8
1.4
50
Fig . 6. Dr ain C u r r e n t vs . Cas e
T e m p e r atu r e
2.4
2
25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Nor m alize d to ID = 100A
V alue vs . Drain Curr e nt
R D S ( o n ) - Normalized
2
V D S - V olts
V D S - V olts
60
50
40
30
20
0.8
10
0.6
0
0
50
100
150
200
I D - A mperes
© 2006 IXYS All rights reserved
250
300
350
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXFR 200N10P
Fig. 8. Trans conductance
Fig. 7. Input Adm ittance
300
140
250
120
- Siemens
TJ = 150 ºC
100
25 ºC
150 ºC
60
fs
150
TJ = -40 ºC
80
g
I D - Amperes
100
200
25 ºC
40
-40 ºC
50
20
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
0
9
50
100
V G S - V olts
Fig. 9. Sour ce Curr e nt vs .
Source -To-Drain V oltage
200
250
300
350
Fig. 10. Gate Charge
10
350
9
V DS = 50V
8
I D = 100A
300
250
I G = 10m A
7
V G S - Volts
I S - Amperes
150
I D - A mperes
200
150
100
6
5
4
3
TJ = 150 ºC
2
50
TJ = 25 ºC
1
0
0
0.4
0.6
0.8
1
1.2
1.4
1.6
0
25
50
V S D - V olts
100 125 150 175 200 225 250
Fig . 12. Fo r w ar d -Bias
Safe Op e r atin g A r e a
Fig. 11. Capacitance
1000
100,000
f = 1MH z
T J = 1 7 5 ºC
R D S (o n ) L im it
C iss
10,000
I D - Amperes
Capacitance - picoFarads
75
Q G - nanoCoulombs
C oss
C rss
1,000
TC = 2 5 ºC
1 0 0 µs
100
1m s
10m s
DC
10
100
0
5
10
15
20
25
30
35
40
V DS - V olts
IXYS reserves the right to change limits, test conditions, and dimensions.
1
10
100
VD
S
- V olts
1000
IXFR 200N10P
Fig. 13. Maximum Transient Thermal Resistance
R( t h ) J C - ºC / W
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
IXYS REF: T_200N10P (88) 03-22-06-E.xls
Similar pages