Panasonic LNCQ03PS Red light semiconductor laser Datasheet

Semiconductor Laser
LNCQ03PS
Red Light Semiconductor Laser
ø5.6 +0
–0.025
ø4.4
ø3.55±0.1
For optical control systems
Unit : mm
2
Reference slot
Low threshold current
PD
110˚±1˚
Features
High output operations with oscillatins wavelength of 660nm : 35mw
0.4±0.1
1.0±0.1
LD
3
Junction plane
1
Reference plane
2.3
1.27±0.07
0.25
ø1.0 min.
Space saved by miniaturization
Low astigmatic difference facilitates good concentrated light spot,
production.
Reference plane
1.2
Stable single horizontal mode osillation
6.5
3-ø0.45
Applications
DVD-Ram
1
Pointer
3
2
ø2.0
1: LD Anode
2: Common Case
3: PD Cathode
Bottom view
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Radiant power
Reverse voltage
Ratings
Unit
PO
35
mW
Laser
VR
1.5
V
PIN
VR (PIN)
30
V
Pd (PIN)
60
mW
Power dissipation
Operating ambient temperature
Topr
–10 to +60
˚C
Storage temperature
Tstg
– 40 to +85
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Threshold current
typ
max
Unit
20
50
70
mA
50
95
120
mA
2.0
2.5
3.0
V
Operating current
IOP
CW PO = 30mW
Operating voltage
VOP
CW PO = 30mW
Resistance between electrodes
RS
CW PO = 30mW
3.0
5.0
10
Ω
Oscillation wavelength
λL
CW PO = 30mW
635
660
675
nm
Slope efficiency
SE
CW PO = 30mW
0.5
0.7
1.1
W/A
θ//
CW PO = 30mW
7.5
8.5
10.5
deg.
Vertical direction
θ⊥
CW PO = 30mW
17
22
X direction
θX
CW PO = 30mW
–2.0
θY
CW PO = 4mW
–3.0
As*2
CW PO = 4mW
Horizontal direction
Y direction
Astigmatic difference
*3
min
CW
Optical axis
accuracy
*2
Conditions
Ith
Radiation angle
*1
Symbol
5.0
26.5
deg.
+2.0
deg.
+3.0
deg.
10
µm
θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )
Reference to package axis.
Guaranteed value in design.
1
Semiconductor Laser
LNCQ03PS
PO — IOP
I—V
80
Far field pattern
160
100
Relative radiant power ∆PO
120
I (mA)
60
40
80
Current
Radiant power PO (mW)
Ta = 25˚C
20
40
75
50
25
Fv
Fh
0
0
50
100
150
0
200
0
1
2
4
Ith — Ta
20
40
60
IP (µA)
PIN photo current
10 2
10
80
0
Ambient temperature Ta (˚C )
20
40
60
80
Ambient temperature Ta (˚C )
PO — Ta
Id — Ta
VR (PIN) = 30V
10
PIN dark current Id (nA)
Radiant power PO (mW)
40
30
20
0
– 10
10
30
50
70
Ambient temperature Ta (˚C )
2
1
10 –1
10 –2
10
40
60
10 –3
– 10
10
30
50
Ambient temperature Ta (˚C )
0.3
0.2
0.1
0
–20
0
20
40
Ambient temperature Ta (˚C )
10 2
50
20
0.4
IOP (mA)
Operating current
Ith (mA)
10
0
IP — Ta
10 3
0
20
Angle θ (deg.)
IOP — Ta
10 2
1
40
Voltage V (V)
Operating current IOP (mA)
Threshold current
3
0
60
70
60
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