PHILIPS BUK78150-55 Trenchmos transistor standard level fet Datasheet

Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope suitable for surface
mounting. Using ’trench’ technology
the device features very low on-state
resistance and has integral zener
diodes giving ESD protection. It is
intended for use in automotive and
general
purpose
switching
applications.
PINNING - SOT223
PIN
BUK78150-55
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 10 V
PIN CONFIGURATION
MAX.
UNIT
55
5.5
1.8
150
150
V
A
W
˚C
mΩ
SYMBOL
DESCRIPTION
d
4
1
gate
2
drain
3
source
4
drain (tab)
g
2
1
s
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VDS
VDGR
±VGS
ID
ID
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
ID
Drain current (DC)
IDM
Ptot
Ptot
Drain current (pulse peak value)
Total power dissipation
Total power dissipation
Tstg, Tj
Storage & operating temperature
RGS = 20 kΩ
Tsp = 25 ˚C
On PCB in Fig.19
Tamb = 25 ˚C
On PCB in Fig.19
Tamb = 100 ˚C
Tsp = 25 ˚C
Tsp = 25 ˚C
On PCB in Fig.19
Tamb = 25 ˚C
-
MIN.
MAX.
UNIT
-
55
55
16
5.5
2.6
V
V
V
A
A
-
1.6
A
-
30
8.3
1.8
A
W
W
- 55
150
˚C
MIN.
MAX.
UNIT
-
2
kV
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge capacitor
voltage
Human body model
(100 pF, 1.5 kΩ)
January 1998
1
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK78150-55
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-sp
Rth j-amb
From junction to solder point
From junction to ambient
Mounted on any PCB
Mounted on PCB of Fig.18
TYP.
MAX.
UNIT
12
-
15
70
K/W
K/W
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
VGS = 0 V; ID = 0.25 mA
VGS(TO)
Tj = -55˚C
VDS = VGS; ID = 1 mA
Tj = 150˚C
Tj = -55˚C
IDSS
Zero gate voltage drain current
VDS = 55 V; VGS = 0 V;
IGSS
Gate source leakage current
VGS = ±10 V
±V(BR)GSS
RDS(ON)
Gate source breakdown voltage IG = ±1 mA
Drain-source on-state
VGS = 10 V; ID = 5 A
resistance
Tj = 150˚C
Tj = 150˚C
Tj = 150˚C
MIN.
TYP.
MAX.
UNIT
55
50
2.0
1.2
16
-
3.0
0.05
0.04
120
-
4.0
4.4
10
100
1
10
150
277
V
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
MIN.
TYP.
MAX.
UNIT
0.5
2.5
-
S
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
gfs
Forward transconductance
VDS = 25 V; ID = 5 A; Tj = 25˚C
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
190
65
32
240
80
45
pF
pF
pF
td on
tr
td off
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 30 V; ID = 5 A;
VGS = 10 V; RG = 10 Ω;
-
9
28
15
8
14
42
23
12
ns
ns
ns
ns
MIN.
TYP.
MAX.
UNIT
Tj = 25˚C
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = -55 to 175˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
IDR
Tsp = 25˚C
-
-
5.5
A
IDRM
VSD
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Tsp = 25˚C
IF = 2 A; VGS = 0 V
-
0.85
30
1.1
A
V
trr
Qrr
Reverse recovery time
Reverse recovery charge
IF = 2 A; -dIF/dt = 100 A/µs;
VGS = -10 V; VR = 30 V
-
43
0.16
-
ns
µC
January 1998
2
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK78150-55
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
WDSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 1.9 A; VDD ≤ 25 V;
VGS = 10 V; RGS = 50 Ω; Tsp = 25 ˚C
120
MIN.
TYP.
MAX.
UNIT
-
-
15
mJ
Normalised Power Derating
PD%
BUKX8150-55
100
110
ID/A
100
90
tp =
RDS(ON) = VDS/ID
10
80
70
1 us
10 us
60
50
100 us
40
DC
1
1 ms
30
10 ms
20
10
100 ms
0
0
20
40
60
80
100
Tmb / C
120
0.1
140
55
Fig.3. Safe operating area. Tsp = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Normalised Current Derating
ID%
10
VDS/V
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f(Tsp)
120
1
1E+02
BUKX8150-55
Zth / (K/W)
110
3E+01
100
90
1E+01
0.5
80
70
3E+00
60
50
1E+00
0.2
0.1
0.05
3E-01
0.02
40
30
1E-01
20
10
3E-02
0
0
20
40
60
80
Tmb / C
100
120
1E-02
1E-07
140
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/ID 25 ˚C = f(Tsp); conditions: VGS ≥ 10 V
January 1998
PD
tp
D=
0
T
1E-05
1E-03
t/s
1E-01
tp
T
t
1E+01
Fig.4. Transient thermal impedance.
Zth j-sp = f(t); parameter D = tp/T
3
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
10
4
16
ID/A
VGS/V =
gfs/S
6.5
8
10
8
BUK78150-55
3.5
3
6.0
6
2.5
5.5
4
2
5.0
1.5
2
4.5
4.0
0
0
2
4
6
8
1
2
3
4
5
6
7
8
9
10
ID/A
Fig.5. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VGS
400 RDS(ON)mOhm
5
1
10
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID); conditions: VDS = 25 V
2.5
5.5
BUK98XX-55
a
Rds(on) normalised to 25degC
6
300
2
6.5
200
1.5
7
8
10
1
100
0
0
1
2
3
4
5
ID/A
6
7
8
9
10
0.5
-100
11
Fig.6. Typical on-state resistance, Tj = 25 ˚C.
RDS(ON) = f(ID); parameter VGS
-50
0
50
Tmb / degC
100
150
200
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 5 A; VGS = 10 V
10
5
ID/A
VGS(TO) / V
BUK78xx-55
max.
8
4
typ.
6
3
4
2
min.
Tj/C =
150
25
1
2
0
0
1
2
3
4
VGS/V
5
6
7
0
-100
8
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj
January 1998
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
4
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK78150-55
10
Sub-Threshold Conduction
1E-01
IF/A
8
1E-02
2%
1E-03
typ
6
98%
Tj/C =
150
25
4
1E-04
2
1E-05
0
1E-06
0
1
2
3
4
0
0.2
0.4
0.6
0.8
VSDS/V
5
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
1
1.2
1.4
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
350
120
110
300
WDSS%
100
90
250
pF
80
70
200
Ciss
60
50
150
40
100
30
20
Coss
Crss
50
10
0
20
0
0.01
0.1
1
VDS/V
10
40
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
60
80
100
Tmb / C
120
140
Fig.15. Normalised avalanche energy rating.
WDSS% = f(Tsp); conditions: ID = 1.9 A
12
VGS/V
VDD
+
10
L
8
VDS
VDS = 14V
VDS = 44V
-
VGS
6
-ID/100
0
4
RGS
2
0
T.U.T.
0
1
2
3
QG/nC
4
5
6
7
Fig.16. Avalanche energy test circuit.
WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 5 A; parameter VDS
January 1998
R 01
shunt
5
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK78150-55
+
VDD
RD
VDS
-
VGS
RG
0
T.U.T.
Fig.17. Switching test circuit.
January 1998
6
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK78150-55
PRINTED CIRCUIT BOARD
Dimensions in mm.
36
18
60
4.5
4.6
9
10
7
15
50
Fig.18. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).
January 1998
7
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK78150-55
MECHANICAL DATA
Dimensions in mm
6.7
6.3
Net Mass: 0.11 g
B
3.1
2.9
0.32
0.24
0.2
4
A
A
0.10
0.02
16
max
M
7.3
6.7
3.7
3.3
13
2
1
10
max
1.8
max
1.05
0.80
2.3
0.60
0.85
4.6
3
0.1 M
B
(4x)
Fig.19. SOT223 surface mounting package.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to surface mounting instructions for SOT223 envelope.
3. Epoxy meets UL94 V0 at 1/8".
January 1998
8
Rev 1.000
Philips Semiconductors
Product specification
TrenchMOS transistor
Standard level FET
BUK78150-55
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1998
9
Rev 1.000
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