FDD6680AS 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDD6680AS RDS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode. • 55 A, 30 V RDS(ON) max= 10.5 mΩ @ VGS = 10 V RDS(ON) max= 13.0 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (21nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter . • Low side notebook D D G G S TO-252 S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Unit s VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current (Note 3) 55 A (Note 1a) 100 (Note 1) 60 (Note 1a) 3.1 – Continuous – Pulsed PD Power Dissipation (Note 1b) TJ, TSTG W 1.3 –55 to +150 °C (Note 1) 2.1 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking FDD6680AS FDD6680AS Device FDD6680AS FDD6680AS_NL (Note 4) ©2004 Fairchild Semiconductor Corporation Reel Size 13’’ 13’’ Tape width 16mm 16mm Quantity 2500 units 2500 units FDD6680AS Rev A(X) FDD6680AS December 2004 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 54 205 mJ 13.5 A Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID=13.5A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient 30 V 29 mV/°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 1.4 –3 3 V mV/°C 8.6 10.3 12.5 10.5 13.0 16.0 mΩ On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 1 mA ID = 1 mA, Referenced to 25°C 1 Static Drain–Source On–Resistance VGS = 10 V, ID = 12.5 A ID = 10 A VGS = 4.5 V, VGS= 10 V, ID = 12.5A, TJ= 125°C ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, ID = 12.5 A 44 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1200 pF 50 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance 350 pF Crss Reverse Transfer Capacitance 120 pF 1.6 Ω RG VGS = 15 mV, Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time f = 1.0 MHz (Note 2) VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 10 20 ns 6 12 ns 28 45 ns tf Turn–Off Fall Time 12 22 ns td(on) Turn–On Delay Time 14 25 ns 13 23 ns 20 32 ns tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time 11 20 ns Qg(TOT) Qg Total Gate Charge at Vgs=10V 21 29 nC 11 15 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge Total Gate Charge at Vgs=5V VDD = 15 V, VGS = 4.5 V, VDD = 15 V, ID = 1 A, RGEN = 6 Ω ID = 12.5 A 3 nC 4 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage trr Qrr Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 4.4 A VGS = 0 V, IS = 7 A IF = 12.5A, diF/dt = 300 A/µs (Note 2) (Note 2) 0.5 0.6 17 4.4 A 0.7 V nS (Note 3) 11 nC FDD6680AS Rev A (X) FDD6680AS Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. FDD6680AS_NL is a lead free product. The FDD6680AS_NL marking will appear on the reel label. FDD6680AS Rev A (X) FDD6680AS Electrical Characteristics FDD6680AS Typical Characteristics 100 2 VGS = 10V VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V ID, DRAIN CURRENT (A) 80 6.0V 4.5V 3.5V 60 40 3.0V 20 2.5V 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 3.5V 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 0 3 Figure 1. On-Region Characteristics. 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.032 1.6 ID = 12.5A VGS =10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.8 0 1.4 1.2 1 0.8 ID = 6.3A 0.026 0.02 o TA = 125 C 0.014 o TA =25 C 0.008 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 2 150 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 80 ID, DRAIN CURRENT (A) 1.8 60 TA = 125oC 40 -55oC 20 25oC 0 10 TA = 125oC 1 o 25 C -55oC 0.1 0.01 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 Figure 5. Transfer Characteristics. 4.5 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6680AS Rev A (X) 1800 ID = 12.5A f = 1MHz VGS = 0 V VDS = 10V 1500 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 1200 Ciss 900 600 Coss 2 300 0 Crss 0 0 5 10 15 20 25 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 Figure 8. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 1000 100 100us 1ms 10ms 100ms 1s 10s RDS(ON) LIMIT 10 1 DC VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 60 40 20 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6680AS Rev A (X) FDD6680AS Typical Characteristics (continued) FDD6680AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Current: 3A/div Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6680AS. Schottky barrie diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 10nS/div Figure 12. FDD6680AS SyncFET body diode reverse recovery characteris For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6680). IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 TA = 125oC 0.01 0.001 TA = 100oC 0.0001 TA = 25oC 0.00001 0.000001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Current: 3A/div Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 10nS/div Figure 13. Non-SyncFET (FDD6680) body diode reverse recovery characteristic. FDD6680AS Rev A (X) FDD6680AS Typical Characteristics L VDS VGS RGE VGS BVDSS tP + DUT VDS IAS VDD VDD - 0V tp vary tP to obtain required peak IAS IAS 0.01Ω tAV Figure 12. Unclamped Inductive Load Test Circuit Figure 13. Unclamped Inductive Waveforms Drain Current Same type as + 50kΩ 10V - 10µF + 1µF VDD - VGS QG(TOT) 10V DUT QGD QGS VGS Ig(REF Charge, (nC) Figure 14. Gate Charge Test Circuit VDS tON td(ON) RL VDS tr 90% tOFF td(OFF tf ) 90% + VGS RGEN Figure 15. Gate Charge Waveform VDD DUT VGSPulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 16. Switching Time Test Circuit - 10% 0V 90% VGS 0V 10% 50% 10% 50% Pulse Width Figure 17. Switching Time Waveforms FDD6680AS Rev A (X) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15