STMicroelectronics AM80912-030 Avionics applications rf & microwave transistor Datasheet

AM80912-030
RF & MICROWAVE TRANSISTORS
SPECIALITY AVIONICS/JTIDS APPLICATIONS
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REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
15:1 VSWR CAPABILITY
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 30 W MIN. WITH 7.8 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
BRANDING
80912-30
ORDER CODE
AM80912-030
DESCRIPTION
PIN CONNECTION
The AM80912-030 device is a high power Class C
transistor specifically designed for JTIDS pulsed output and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles and temperatures and is
capable of withstanding 15:1 output VSWR at rated
RF conditions.
Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability
and product consistency.
The AM80912-030 is supplied in the hermetic metal/ceramic package with internal input matching
structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T case = 25°C)
Symbol
Parameter
Value
Unit
75
W
Collector Current*
3.5
A
Collector-Supply Voltage*
40
V
Junction Temperature (Pulsed RF Operation)
250
°C
− 65 to +200
°C
2.2
°C/W
PDISS
Power Dissipation*
IC
VCC
TJ
T STG
(TC ≤ 85° C)
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance
*Applies only to rated RF amplifier operation.
August 1992
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AM80912-030
ELECTRICAL SPECIFICATIONS (T case = 25°C)
STATIC
Value
Symbol
Test Conditions
Min .
Typ.
Max.
Unit
BV CBO
IC = 10mA
55
—
—
V
BV EBO
IE = 1mA
3.5
—
—
V
BV CER
IC = 20mA
55
—
—
V
ICES
VCE = 35V
—
—
5.0
mA
hFE
VCE = 5V
15
—
150
—
RBE = 10Ω
IC = 1.0A
DYNAMIC
Value
Symbol
Min .
Typ.
Max.
Unit
POUT
f = 960 — 1215MHz
PIN = 5.0W
VCC = +35V
30
36
—
W
ηC
f = 960 — 1215MHz
PIN = 5.0W
VCC = +35V
40
45
—
%
GP
f = 960 — 1215MHz
6.4 µs on 6. 6 µ s
PIN = 5.0W
VCC = +35V
7.8
8.6
—
dB
Note:
2/6
Test Conditions
Pul se format:
Duty Cycle:
off, repeat f or 3.3 ms, then off for 4.5125 ms.
Burst 49.2%, overall 20.8%
AM80912-030
TYPICAL PERFORMANCE
TYPICAL BROADBAND
POWER AMPLIFIER
TYPICAL RELATIVE POWER
OUTPUT & COLLECTOR
EFFICIENCY* vs COLLECTOR
VOLTAGE
MAXIMUM THERMAL RESISTANCE vs PULSE
WIDTH & DUTY CYCLE
Θjc (°C/W)
DC = 20%
DC = 4%
PIN = 5 W
VCC = 35 V
TC = 40°C
PULSE WIDTH (µsec)
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AM80912-030
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
PIN = 5W
VCC = +35V
ZO* = 50Ω
FREQ.
ZIN (Ω)
ZCL (Ω)
L = 960 MHz
4.5 + j 6.0
11.0 − j 0.5
M = 1090 MHz
5.5 + j 6.3
12.0 − j 2.0
H = 1215 MHz
5.0 + j 5.0
12.5 − j 5.0
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
PIN = 5W
VCC = +35V
ZO* = 50Ω
*Normalized Impedance
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AM80912-030
TEST CIRCUIT
PACKAGE MECHANICAL DATA
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AM80912-030
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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