ON MJE18204 Power transistor Datasheet

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by MJE18204/D
SEMICONDUCTOR TECHNICAL DATA
  $#!%
#)% %"& &'#% #% !'%#" ' !!&' " ) ' "
#)% ($$!* $$! ' #"&
POWER TRANSISTORS
5 AMPERES
1200 VOLTS
35 and 75 WATTS
The MJE/MJF18204 have an application specific state–of–the–art die dedicated to
the electronic ballast (“light ballast”) and power supply applications.
• Improved Global Efficiency Due to Low Base Drive Requirements:
— High and Flat DC Current Gain hFE
— Fast Switching
— No Coil Required in Base Circuit for Fast Turn–Off (No Current Tail)
• Full Characterization at 125_C
• Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric
Distributions
• Two Package Choices: Standard TO–220 or Isolated TO–220
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v
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MAXIMUM RATINGS
Rating
Symbol
MJE18204
MJF18204
Unit
Collector–Emitter Voltage
VCEO
600
Vdc
Collector–Base Voltage
VCBO
1200
Vdc
Collector–Emitter Voltage
VCES
1200
Vdc
Emitter–Base Voltage
VEBO
10
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
5
10
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
2
4
Adc
RMS Isolation Voltage (2)
(for 1 sec, R.H. ≤ 30%)
TC = 25°C
Per Figure 22
Per Figure 23
Per Figure 24
*Total Device Dissipation @ TC = 25°C
*Derate above 25_C
Operating and Storage Temperature
VISOL1
VISOL2
VISOL3
PD
TJ, Tstg
75
0.6
4500
3500
1500
Volts
35
0.28
Watt
W/_C
– 65 to 150
CASE 221A–06
TO–220AB
_C
THERMAL CHARACTERISTICS
Rating
Symbol
MJE18204
MJF18204
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.65
62.5
3.55
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes: 1/8″ from Case for 5 Seconds
TL
260
_C
CASE 221D–02
TO–220 FULLPACK
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
(2) Proper strike and creepage distance must be provided.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO
600
660
VCEO(sus)
VCER(sus)
550
600
630
700
Collector–Base Breakdown Voltage
(ICBO = 1 mA, IE = 0)
VCBO
1200
1300
Vdc
Emitter–Base Breakdown Voltage
(IEBO = 1 mA, IC = 0)
VEBO
10
12.9
Vdc
OFF CHARACTERISTICS
Collector–Emitter Voltage
(IC = 1 mA, IB = 0)
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
(IC = 200 mA, L = 25 mH, R = 2 Ω)
Vdc
Vdc
Collector Cutoff Current (VCE = 600 V, IB = 0)
Collector Cutoff Current (VCE = 550 V, IB = 0)
@ TC = 25°C
@ TC = 125°C
ICEO
200
2000
µAdc
Collector Cutoff Current (VCE = Rated VCES, VBE = 0)
@ TC = 25°C
@ TC = 125°C
@ TC = 125°C
ICES
100
500
100
µAdc
Collector Cutoff Current
(VCB = Rated VCB, IE = 0)
ICBO
100
µAdc
Emitter–Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
100
µAdc
Collector Cutoff Current (VCE = 1000 V, VBE = 0)
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.1 Adc)
(IC = 2 Adc, IB = 0.4 Adc)
VBE(sat)
Vdc
0.83
0.92
1.1
1.25
@ TC = 25°C
@ TC = 125°C
0.3
0.7
1
1.25
@ TC = 25°C
@ TC = 125°C
0.3
0.8
0.6
1.25
VCE(sat)
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.1 Adc)
(IC = 2 Adc, IB = 0.4 Adc)
Vdc
hFE
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
18
@ TC = 25°C
@ TC = 125°C
10
8
13
(IC = 2 Adc, VCE = 1 Vdc)
@ TC = 25°C
@ TC = 125°C
5
4
8
6
—
(IC = 5 mAdc, VCE = 5 Vdc)
@ TC = 25°C
@ TC = 125°C
10
25
33
—
13
MHz
(IC = 1 Adc, VCE = 1 Vdc)
35
—
@ TC = 25°C
@ TC = 125°C
23
22
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Input Capacitance (VEB = 8 Vdc)
fT
Cob
200
pF
Cib
2000
pF
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage:
Determined 1 µs and
3 µs respectively after
rising IB1 reaches
90% of final IB1
2
IC = 2 Adc
IB1 = 660 mAdc
VCC = 300 V
@ 3 µs
IC = 2 Adc
IB1 = 0.4 Adc
VCC = 300 V
@ 3 µs
@ TC = 25°C
VCE(dsat)
2.5
@ TC = 125°C
7.5
@ TC = 25°C
7
@ TC = 125°C
15
V
Motorola Bipolar Power Transistor Device Data
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 µs)
Turn–on Time
Turn–off Time
Turn–on Time
Turn–off Time
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 1 Adc
VCC = 300 Vdc
@ TC = 25°C
ton
105
175
ns
@ TC = 25°C
toff
1.75
2.5
µs
IC = 2 Adc, IB1 = 0.4 Adc
IB2 = 0.4 Adc
VCC = 300 Vdc
@ TC = 25°C
ton
95
200
ns
@ TC = 25°C
toff
3.5
4.5
µs
150
ns
@ TC = 25°C
td
70
IC = 0.7 Adc, IB1 = 50 mAdc
IB2 = 0.4 Adc
VCC = 125 Vdc
PW = 70 µs
tr
210
400
ns
ts
0.9
1.2
µs
tf
275
450
ns
Turn–on Time
Turn–off Time
@ TC = 25°C
SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
110
95
175
ns
@ TC = 25°C
@ TC = 125°C
ts
1.35
1.9
2
µs
Crossover Time
@ TC = 25°C
@ TC = 125°C
tc
150
115
250
ns
Fall Time
@ TC = 25°C
@ TC = 125°C
tf
120
180
200
ns
@ TC = 25°C
@ TC = 125°C
ts
1.9
2.35
2.75
µs
@ TC = 25°C
@ TC = 125°C
tc
190
180
300
ns
@ TC = 25°C
tf
185
300
ns
@ TC = 25°C
ts
4
5
µs
@ TC = 25°C
tc
350
500
ns
Storage Time
Storage Time
IC = 1 Adc
IB1 = 0.1 Adc
IB2 = 0.5 Adc
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 1 Adc
Crossover Time
Fall Time
Storage Time
Crossover Time
IC = 2 Adc
IB1 = 0.4 Adc
IB2 = 0.4 Adc
Motorola Bipolar Power Transistor Device Data
3
TYPICAL STATIC CHARACTERISTICS
100
100
10
TJ = 25°C
TJ = 125°C
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
TJ = 125°C
VCE = 1 V
TJ = – 20°C
1
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
TJ = – 20°C
1
0.01
10
Figure 1. DC Current Gain @ 1 Volt
10
2
VCE = 5 V
TJ = 25°C
VCE , VOLTAGE (VOLTS)
TJ = 125°C
hFE , DC CURRENT GAIN
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 3 Volts
100
10
VCE = 3 V
TJ = 25°C
TJ = 25°C
TJ = – 20°C
4A
3A
1
2A
1.5 A
IC = 1 A
1
0.01
0
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
10
100
1000
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
Figure 3. DC Current Gain @ 5 Volts
10
1.5
1
VBE , VOLTAGE (VOLTS)
VCE , VOLTAGE (VOLTS)
IC/IB = 10
IC/IB = 5
0.1
TJ = 125°C
TJ = 25°C
0.01
0.01
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector–Emitter Saturation Voltage
4
10000
10
1
TJ = – 20°C
0.5
TJ = 25°C
TJ = 125°C
0
0.01
IC/IB = 5
IC/IB = 10
0.1
1
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Base–Emitter Saturation Region
Motorola Bipolar Power Transistor Device Data
10
TYPICAL STATIC CHARACTERISTICS
10000
1600
1400
IC/IB = 10
1200
1000
Cib (pF)
t, TIME (ns)
C, CAPACITANCE (pF)
TJ = 25°C
f(test) = 1 MHz
Cob (pF)
100
1000
IC/IB = 5
800
600
TJ = 125°C
TJ = 25°C
400
IB1 = IB2
VCC = 300 V
PW = 20 µs
200
10
1
10
VR, REVERSE VOLTAGE (VOLTS)
0
100
0.5
Figure 7. Capacitance
4.5
5
Figure 8. Resistive Switching, ton
8
6
TJ = 125°C
TJ = 25°C
7
6
TJ = 125°C
TJ = 25°C
IB1 = IB2
VCC = 300 V
PW = 20 µs
5
IC/IB = 5
t, TIME (ns)
t, TIME ( µs)
2
2.5
3
3.5
4
1.5
IC, COLLECTOR CURRENT (AMPS)
1
5
4
3
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
4
IC/IB = 5
3
IC/IB = 10
2
IC/IB = 10
1
2
0.5
1
1.5
2
2.5
3
3.5
4
IC, COLLECTOR CURRENT (AMPS)
4.5
5
0.5
Figure 9. Resistive Switching, toff
2
2.5
1.5
IC, COLLECTOR CURRENT (AMPS)
3
3.5
Figure 10. Inductive Storage Time, tsi
6
1500
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IC = 1 A
5
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
1000
t, TIME (ns)
t si , STORAGE TIME (µs)
1
4
TJ = 125°C
TJ = 25°C
tc
tfi
tc
500
IC = 2 A
3
3
5
tfi
TJ = 125°C
TJ = 25°C
7
11
9
hFE, FORCED GAIN
13
Figure 11. Inductive Storage Time, tsi (hFE)
Motorola Bipolar Power Transistor Device Data
15
0
0
1
2
IC, COLLECTOR CURRENT (AMPS)
3
Figure 12. Inductive Switching,
tc & tfi @ IC/IB = 5
5
TYPICAL STATIC CHARACTERISTICS
1100
680
900
800
tc
700
t, TIME (ns)
t fi , FALL TIME (ns)
TJ = 125°C
TJ = 25°C
IBoff = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
1000
600
500
400
300
IBoff = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
480
TJ = 125°C
TJ = 25°C
IC = 2 A
IC = 1 A
280
tfi
200
100
80
1
2
3
IC, COLLECTOR CURRENT (AMPS)
0
5
3
4
Figure 13. Inductive Switching,
tc & tfi @ IC/IB = 10
11
9
hFE, FORCED GAIN
13
15
Figure 14. Inductive Fall Time
1400
1200
TJ = 125°C
TJ = 25°C
1000
IB1 = IB2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IC = 2 A
TJ = 25°C
1300
1200
BVCER (VOLTS)
t c , CROSSOVER TIME (ns)
7
800
600
BVCER (VOLTS) @ 10 mA
1100
1000
900
800
400
IC = 1 A
BVCER(sus) @ 200 mA
700
600
200
3
4
5
6
7 8
9
10 11
hFE, FORCED GAIN
12
13
10
15
14
100
RBE (Ω)
Figure 16. BVCER = f (RBE)
Figure 15. Inductive Crossover Time
IC, COLLECTOR CURRENT (AMPS)
6
1 µs
10
5 ms
1 ms
10 µs
1
MJE18204–DC
EXTENDED SOA
IC, COLLECTOR CURRENT (AMPS)
100
0.1
MJF18204–DC
0.01
TC ≤ 125°C
GAIN ≥ 5
LC = 4 mH
5
4
3
2
–5 V
1
–1.5 V
0V
0
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 17. Forward Bias Safe Operating Area
6
1000
400
600
800
500
700
900
1000 1100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 18. Reverse Bias Switching Safe
Operating Area
Motorola Bipolar Power Transistor Device Data
1200
TYPICAL STATIC CHARACTERISTICS
POWER DERATING FACTOR
1.0
SECOND
BREAKDOWN
DERATING
0.8
0.6
0.4
THERMAL
DERATING
0.2
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
Figure 19. Forward Bias Power Derating
160
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC–VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate. The data of
Figure 19 is based on T C = 25°C; T J (pk) is variable
depending on power level. Second breakdown pulse limits
are valid for duty cycles to 10% but must be derated when
TC > 25°C. Second breakdown limitations do not derate the
same as thermal limitations. Allowable current at the
voltages shown on Figure 16 may be found at any case
temperature by using the appropriate curve on Figure 18.
TJ(pk) may be calculated from the data in Figures 21 and
22. At any case temperatures, thermal limitations will
reduce the power that can be handled to values less than
the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained
simultaneously during turn–off with the base–to–emitter
junction reverse biased. The safe level is specified as a
reverse–biased safe operating area (Figure 17). This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
TYPICAL SWITCHING CHARACTERISTICS
(IB1 = IB2 FOR ALL CURVES)
10
VCE
9
dyn 1 µs
IC
90% IC
8
dyn 3 µs
tfi
tsi
7
6
0V
Vclamp
5
10% IC
10% Vclamp
tc
4
IB
90% IB
3
1 µs
2
IB
90% IB1
1
2
1
3 µs
0
TIME
Figure 20. Dynamic Saturation
Voltage Measurements
Motorola Bipolar Power Transistor Device Data
0
3
4
5
6
8
7
TIME
Figure 21. Inductive Switching Measurements
7
TYPICAL SWITCHING CHARACTERISTICS
(IB1 = IB2 FOR ALL CURVES)
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 µF
100 µF
MTP8P10
100 Ω
3W
150 Ω
3W
MTP8P10
RB1
MPF930
MUR105
Iout
MPF930
+10 V
A
50 Ω
RB2
MJE210
COMMON
MTP12N10
150 Ω
3W
500 µF
1 µF
–Voff
IC PEAK
VCE PEAK
VCE
IB1
IB
IB2
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
8
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for desired IB1
RBSOA
L = 500 µH
RB2 = 0
VCC = 15 Volts
RB1 selected for desired IB1
Motorola Bipolar Power Transistor Device Data
TYPICAL THERMAL RESPONSE
(IB1 = IB2 FOR ALL CURVES)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01
0.1
1
10
RθJC(t) = r(t) RθJC
RθJC = 1.65°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
100
1000
t, TIME (ms)
Figure 22. Typical Thermal Response (ZθJC(t)) for MJE18204
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1
D = 0.5
0.2
P(pk)
0.1
0.1
t1
0.05
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
RθJC(t) = r(t) RθJC
RθJC = 3.55°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
SINGLE PULSE
0.1
1
10
100
1000
10000
100000
t, TIME (ms)
Figure 23. Typical Thermal Response (ZθJC(t)) for MJF18204
Motorola Bipolar Power Transistor Device Data
9
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
LEADS
HEATSINK
MOUNTED
FULLY ISOLATED
PACKAGE
0.107″ MIN
MOUNTED
FULLY ISOLATED
PACKAGE
LEADS
LEADS
HEATSINK
HEATSINK
0.107″ MIN
0.110″ MIN
Figure 24. Screw or Clip Mounting
Position for Isolation Test Number 1
Figure 25. Clip Mounting Position
for Isolation Test Number 2
Figure 26. Screw Mounting Position
for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION**
4–40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 27a. Screw–Mounted
Figure 27b. Clip–Mounted
Figure 27. Typical Mounting Techniques
for Isolated Package
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a
constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
10
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
B
–T–
F
SEATING
PLANE
C
T
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
S
A
Q
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
U
K
Z
L
R
V
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
–T–
–B–
F
SEATING
PLANE
C
S
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
U
A
1 2 3
H
–Y–
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.621
0.629
0.394
0.402
0.181
0.189
0.026
0.034
0.121
0.129
0.100 BSC
0.123
0.129
0.018
0.025
0.500
0.562
0.045
0.060
0.200 BSC
0.126
0.134
0.107
0.111
0.096
0.104
0.259
0.267
MILLIMETERS
MIN
MAX
15.78
15.97
10.01
10.21
4.60
4.80
0.67
0.86
3.08
3.27
2.54 BSC
3.13
3.27
0.46
0.64
12.70
14.27
1.14
1.52
5.08 BSC
3.21
3.40
2.72
2.81
2.44
2.64
6.58
6.78
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
CASE 221D–02
(ISOLATED TO–220 TYPE)
UL RECOGNIZED: FILE #E69369
ISSUE D
Motorola Bipolar Power Transistor Device Data
11
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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12
◊
Motorola Bipolar Power Transistor Device Data
*MJE18204/D*
MJE18204/D
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