isc Product Specification INCHANGE Semiconductor BDS18 isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed APPLICATIONS ·Developed for power liner and switching -Gener purpose power . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -8.0 A IB Base Current-Continuous -2 A Pc Collector Power Dissipation @ TC<75℃ 50 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor BDS18 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA;Ib=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A -0.4 V VBE(on) Base - Emitter voltage Ic= –0.5A ;Vce= –2V -1.0 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -20 μA ICEO Collector Cutoff Current VCE= -60V ; IB=0 0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μA hFE DC Current Gain IC= -4A ; VCE= -2V 40 fT Transition frequency Ic= –0.5A Vce= –4V F = 20MHz 30 -120 UNIT V 250 MHZ Switching times ton Turn-on Time tstg Storage Time tf IC= -2.0A , IB1= -IB2= -0.2A,VCC≈-80V Fall Time isc website：www.iscsemi.com 2 0.5 μs 1.5 μs 0.3 μs isc & iscsemi is registered trademark