IXYS IXTN600N04T2 Trencht2 gigamos power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode Datasheet

IXTN600N04T2
TrenchT2TM GigaMOSTM
Power MOSFET
VDSS
ID25
=
=
40V
600A
Ω
1.3mΩ
RDS(on) ≤
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
miniBLOC, SOT-227
E153432
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
40
V
VDGR
TJ = 25°C to 175°C, RGS = 1MΩ
40
V
VGSM
Transient
±20
V
ID25
TC = 25°C (Chip Capability)
600
A
IL(RMS)
IDM
External Lead Current Limit
TC = 25°C, Pulse Width Limited by TJM
200
1800
A
A
IA
EAS
TC = 25°C
TC = 25°C
200
3
A
J
PD
TC = 25°C
940
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
VISOL
50/60 Hz, RMS
IISOL ≤ 1mA
Md
Mounting Torque
Terminal Connection Torque
t = 1 minute
t = 1 second
Weight
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
( Gate Return ) Terminal.
Features
z
z
z
z
z
z
z
z
International Standard Package
miniBLOC, with Aluminium Nitride
Isolation
175°C Operating Temperature
Isolation Voltage 2500 V~
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
Low RDS(on)
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
z
Characteristic Values
Min.
Typ.
Max.
z
z
BVDSS
VGS = 0V, ID = 250μA
40
VGS(th)
VDS = VGS, ID = 250μA
1.5
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 100A, Note 1
TJ = 150°C
© 2012 IXYS CORPORATION, All Rights Reserved
V
Applications
3.5
V
±200
nA
z
10 μA
1 mA
z
1.3 mΩ
Easy to Mount
Space Savings
High Power Density
z
DC-DC Converters and Off-Line UPS
Primary-Side Switch
High Speed Power Switching
Applications
DS100172B(10/12)
IXTN600N04T2
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
90
VDS = 10V, ID = 60A, Note 1
SOT-227B (IXTN) Outline
150
S
40
nF
6400
pF
1470
pF
1.32
Ω
40
ns
20
ns
90
ns
tf
250
ns
Qg(on)
590
nC
127
nC
163
nC
Ciss
VGS = 0V, VDS = 25V, f = 1MHz
Coss
Crss
RGI
Gate Input Resistance
td(on)
Resistive Switching Times
tr
VGS = 10V, VDS = 0.5 • VDSS, ID = 200A
td(off)
RG = 1Ω (External)
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • IDSS
Qgs
Qgd
(M4 screws (4x) supplied)
0.16 °C/W
RthJC
RthCS
0.05
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min. Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IRM
IF = 150A, VGS = 0V
-di/dt = 100A/μs
VR = 20V
QRM
Note
1.
600
A
1800
A
1.2
V
100
3.3
ns
A
165
nC
Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTN600N04T2
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
350
400
VGS = 15V
10V
7V
300
VGS = 15V
350
250
6V
200
150
ID - Amperes
ID - Amperes
10V
7V
6V
300
5V
100
250
5V
200
4.5V
150
100
4.5V
50
4V
50
4V
0
0
0.0
0.1
0.2
0.3
0.4
0.0
0.5
0.5
1.0
Fig. 3. Output Characteristics @ T J = 150ºC
2.0
2.5
3.0
Fig. 4. Normalized RDS(on) vs. Junction Temperature
350
2.0
VGS = 15V
10V
7V
300
VGS = 10V
1.8
R DS(on) - Normalized
250
ID - Amperes
1.5
VDS - Volts
VDS - Volts
6V
200
5V
150
4V
100
50
I D < 600A
1.6
1.4
1.2
1.0
0.8
3V
0
0.6
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-50
-25
0
25
VDS - Volts
Fig. 5. Normalized RDS(on) vs. Drain Current
75
100
125
150
175
Fig. 6. Drain Current vs. Case Temperature
2.0
220
VGS = 10V
15V
1.8
200
External Lead Current Limit
180
160
1.6
TJ = 175ºC
ID - Amperes
R DS(on) - Normalized
50
TJ - Degrees Centigrade
1.4
1.2
140
120
100
80
60
TJ = 25ºC
40
1.0
20
0.8
0
0
50
100
150
200
ID - Amperes
© 2012 IXYS CORPORATION, All Rights Reserved
250
300
350
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTN600N04T2
Fig. 8. Transconductance
Fig. 7. Input Admittance
240
200
TJ = - 40ºC
180
200
160
120
g f s - Siemens
ID - Amperes
25ºC
TJ = 150ºC
25ºC
- 40ºC
140
100
80
160
150ºC
120
80
60
40
40
20
0
0
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
20
40
60
80
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
120
140
160
180
200
Fig. 10. Gate Charge
10
350
VDS = 20V
9
I D = 300A
300
8
250
I G = 10mA
7
VGS - Volts
IS - Amperes
100
ID - Amperes
200
150
TJ = 150ºC
100
6
5
4
3
TJ = 25ºC
2
50
1
0
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
100
200
VSD - Volts
300
400
500
600
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
10,000
100.0
1,000
25µs
10.0
ID - Amperes
Capacitance - NanoFarads
RDS(on) Limit
Ciss
Coss
1.0
Crss
100µs
External Lead Limit
100
1ms
10ms
10
100ms
TJ = 175ºC
DC
TC = 25ºC
f = 1 MHz
Single Pulse
0.1
1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
VDS - Volts
100
IXTN600N04T2
Fig. 13. Resistive Turn-on Rise Time
vs. Junction Temperature
Fig. 14. Resistive Turn-on Rise Time
vs. Drain Current
100
90
RG = 1Ω , VGS = 10V
80
VDS = 20V
80
t r - Nanoseconds
70
t r - Nanoseconds
RG = 1Ω , VGS = 10V
90
VDS = 20V
60
I
50
D
= 200A
40
I
30
D
= 100A
70
TJ = 125ºC
60
50
40
30
20
20
10
10
TJ = 25ºC
0
0
25
35
45
55
65
75
85
95
105
115
40
125
60
80
100
TJ - Degrees Centigrade
600
td(on) - - - -
I D = 100A
60
100
40
0
4
5
6
7
8
9
250
130
200
I D = 100A
150
110
100
100
50
90
25
10
35
45
55
65
75
85
95
105
115
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Drain Current
Fig. 18. Resistive Turn-off Switching Times
vs. Gate Resistance
tf
td(off) - - - -
RG = 1Ω, VGS = 10V
200
800
180
700
250
140
200
120
TJ = 125ºC, 25ºC
t d(off) - Nanoseconds
160
300
200
200
100
100
40
200
0
160
ID - Amperes
© 2012 IXYS CORPORATION, All Rights Reserved
180
600
300
60
140
VDS = 20V
400
50
120
700
I D = 200A, 100A
400
80
100
td(off) - - - -
500
100
80
tf
TJ = 125ºC, VGS = 10V
500
100
60
800
600
150
0
80
125
0
1
2
3
4
5
6
RG - Ohms
7
8
9
10
t d(off) - Nanoseconds
VDS = 20V
300
120
I D = 200A
RG - Ohms
350
40
140
0
20
3
400
t f - Nanoseconds
t f - Nanoseconds
80
t f - Nanoseconds
t r - Nanoseconds
300
150
t d(off) - Nanoseconds
I D = 200A
t d(on) - Nanoseconds
100
td(off) - - - -
VDS = 20V
300
400
2
200
RG = 1Ω, VGS = 10V
VDS = 20V
1
180
160
tf
350
120
TJ = 125ºC, VGS = 10V
200
160
400
140
500
140
Fig. 16. Resistive Turn-off Switching Times
vs. Junction Temperature
Fig. 15. Resistive Turn-on Switching Times
vs. Gate Resistance
tr
120
ID - Amperes
IXTN600N04T2
Fig. 19. Maximum Transient Thermal Impedance
1.000
Fig. 19. Maximum Transient Thermal Impedance
.sadgsfgsf
0.300
Z(th)JC - ºC / W
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_600N04T2 (V9)11-05-09
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