CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL3595 type is an epitaxial planar silicon diode, manufactured in a hermetically sealed glass surface mount package, designed for low leakage, high conductance applications. MARKING: CATHODE BAND SOD-80 CASE MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Forward Steady-State Current Recurrent Peak Forward Current Peak Forward Surge Current (1.0s pulse) Peak Forward Surge Current (1.0μs pulse) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VRRM VRWM IO IF if IFSM IFSM PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IR VR=125V IR VR=125V, TA=125°C IR VR=125V, TA=150°C IR VR=30V, TA=125°C BVR IR=100μA 150 VF IF=1.0mA 0.54 VF IF=5.0mA 0.62 VF IF=10mA 0.65 VF IF=50mA 0.75 VF IF=100mA 0.79 VF IF=200mA 0.834 CT VR=0, f=1.0MHz trr VR=3.5V, If=10mA, RL=1.0kΩ 150 125 150 225 600 500 4.0 500 -65 to +200 350 MAX 1.0 500 3.0 300 UNITS V V mA mA mA mA A mW °C °C/W 0.69 0.77 0.80 0.88 0.92 UNITS nA nA μA nA V V V V V V 1.00 8.0 3.0 V pF μs R4 (8-January 2010) CLL3595 SURFACE MOUNT LOW LEAKAGE SILICON DIODE SOD-80 CASE - MECHANICAL OUTLINE MARKING: CATHODE BAND R4 (8-January 2010) w w w. c e n t r a l s e m i . c o m