MCC 2N3904

MCC
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
2N3904
Features
•
•
Through Hole Package
Capable of 600mWatts of Power Dissipation
Pin Configuration
Bottom View
C
B
NPN General
Purpose Amplifier
E
TO-92
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
A
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
Collector-Emitter Breakdown Voltage*
(I C=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(I C=10µAdc, IE=0)
Emitter-Base Breakdown Voltage
(I E=10µAdc, IC=0)
Base Cutoff Current
(VCE=30Vdc, VBE=3.0Vdc)
Collector Cutoff Current
(VCE=30Vdc, VBE=3.0Vdc)
40
Vdc
60
Vdc
6.0
Vdc
50
nAdc
50
nAdc
E
B
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(I C=0.1mAdc, VCE=1.0Vdc)
(I C=1.0mAdc, VCE=1.0Vdc)
(I C=10mAdc, VCE=1.0Vdc)
(I C=50mAdc, VCE=1.0Vdc)
(I C=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(I C=10mAdc, IB=1.0mAdc)
(I C=50mAdc, IB=5.0mAdc)
Base-Emitter Saturation Voltage
(I C=10mAdc, IB=1.0mAdc)
(I C=50mAdc, IB=5.0mAdc)
C
40
70
100
60
30
0.65
300
0.2
0.3
Vdc
0.85
0.95
Vdc
D
SMALL-SIGNAL CHARACTERISTICS
fT
Cobo
Cibo
NF
Current Gain-Bandwidth Product
(I C=10mAdc, VCE=20Vdc, f=100MHz)
Output Capacitance
(VCB=5.0Vdec, IE=0, f=1.0MHz)
Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz)
Noise Figure
(IC=100µAdc, VCE=5.0Vdc, RS=1.0kΩ
f=10Hz to 15.7kHz)
300
MHz
G
4.0
pF
8.0
pF
5.0
dB
35
35
200
50
ns
ns
ns
ns
SWITCHING CHARACTERISTICS
td
tr
ts
tf
*Pulse Width
Delay Time
(VCC=3.0Vdc, VBE=0.5Vdc
Rise Time
IC=10mAdc, IB1=1.0mAdc)
Storage Time
(VCC=3.0Vdc, IC=10mAdc
Fall Time
IB1=IB2=1.0mAdc)
≤ 300µs, Duty Cycle ≤ 2.0%
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
www.mccsemi.com
MAX
.185
.185
--.020
.145
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
--0.63
3.68
2.67
NOTE
MCC
2N3904
Base-Emitter ON Voltage vs
Collector Current
DC Current Gain vs Collector Current
220
1.2
VCE = 5.0V
200
VCE = 5.0V
1.0
160
hFE
VBE(ON) - (V)
120
0.8 T = 25°C
A
0.6
80
0.4 TA = 100°C
40
0.2
0.1
10
1
0
0.1
100
1.0
10
IC (mA)
Collector Saturation
Volatge vs Collector Current
Base Saturation
Voltage vs Collector Current
1.2
.150
IC/IB = 10
TA = 25°C
.125
100
IC - (mA)
IC/IB = 10
TA = 25°C
1.1
.100
1.0
VBE(SAT) - (V)
VCE(SAT) - (V)
.075
.90
.050
.80
.025
.70
0
0.1
10
1.0
.60
0.1
100
1.0
10
100
IC - (mA)
IC - (mA)
Capacitance vs
Reverse Bias Voltage
Collector Cutoff Current vs
Ambient Temperature
1000
1.0
f = 1 MHz
8
VCB = 20V
100
pF
ICBO - (mA)
6
4
CIB
2
COB
10
1.0
0
25
50
75
TA - (°C)
100
125
150
0
0.1
1.0
Volts - (V)
www.mccsemi.com
10
MCC
2N3904
Maximum Power Dissipation vs
Ambient Temperature
Noise Figure vs
Source Resistance
12
800
10
IC = 1.0mA
600
TO-92
8
PD(MAX) - (mW)
IC = 100µA
NF - (dB)
400
6
4
200
SOT-23
2
0
50
0
100
150
f = 1.0kHz
0
0.1
200
1.0
10
TA - (°C)
100
RS - (kΩ)
Contours of Constant Gain
Bandwidth Product (fT)
Current Gain
12
1000
VCE = 10V
f = 1.0kHz
10
8
VCE - (V) 6
hfe
100
4
2
0
0.1
1.0
10
IC - (mA)
*100MHz increments from
200 to 500MHz
100
10
0.1
1.0
Switching Times vs
Collector Current
Noise Figure vs
Frequency
1000
6
VCE = 5.0V
IB1 = IB2 = IC/10
5
tr
4
NF - (dB)
IC = 0.5mA RS = 200Ω
T - (ns)
2
0
ts
100
3
1
10
IC - (mA)
tf
10
IC = 50µA RS = 1.0kΩ
IC = 100µA RS = 500Ω
0.1
1.0
10
100
1.0
1.0
10
IC - (mA)
f - (kHz)
www.mccsemi.com
100
MCC
2N3904
Output Admittance
Input Impedance
10
100
VCE = 10V
f = 1.0kHz
VCE = 10V
f = 1.0kHz
hoe - (µΩ)
hie - (kΩ)
1.0
10
0.1
0.1
1
1.0
10
0.1
IC - (mA)
1.0
IC - (mA)
10
Turn On and Turn Off Times vs
Collector Current
Voltage Feedback Ratio
100
1000
-4
hfe - (X10 )
toff
100
T - (ns)
10
ton
10
ton IB1 = IC/10
VBE(OFF) = 0.5V
toff IB1 = IB2 = IC/10
1.0
0.1
1.0
IC - (mA)
10
1.0
1.0
10
IC - (mA)
www.mccsemi.com
100