MCC
2N4123
2N4124
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
Features
NPN Silicon General
l Through Hole TO-92 Package
l Capable of 625mWatts of Power Dissipatio
Purpose Transistor
625mW
Pin Configuration
Bottom View
C
B
E
TO-92
Mechanical Data
A
E
l Case: TO-92, Molded Plastic
l Marking:
B
2N4123 --------- 2N4123
2N4124 --------- 2N4124
Maximum Ratings @ 25oC Unless Otherwise Specified
Charateristic
Symbol Value Unit
Collector-Emitter Voltage 2N4123
30
VCEO
V
2N4124
25
Collector-Base Voltage 2N4123
40
VCBO
V
2N4124
30
Emitter-Base Voltage
2N4123
VEBO
5
V
2N4124
Collector Current(DC)
IC
200
mA
mW
625
Pd
Power Dissipation@TA=25oC
5.0 mW/oC
W
1.5
Pd
Power Dissipation@TC=25oC
12 mW/oC
Thermal Resistance, Junction to
200 oC/W
Ambient Air
Thermal Resistance, Junction to
83.3 oC/W
Case
Operating & Storage Temperature
Tj, TSTG -55~150
o
C
C
D
G
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
www.mccsemi.com
MAX
.185
.185
--.020
.145
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
--0.63
3.68
2.67
NOTE
MCC
2N4123
2N4124
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
30
25
—
—
40
30
—
—
5.0
—
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IE= 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CEO
2N4123
2N4124
Vdc
V(BR)CBO
2N4123
2N4124
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Vdc
V(BR)EBO
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
Vdc
nAdc
—
50
—
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC =2.0 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
hFE
2N4123
2N4124
50
120
—
2N4123
2N4124
25
60
—
—
0.3
—
0.95
Collector – Emitter Saturation Voltage
(IC = 50mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 50mAdc, IB = 5.0 mAdc)
VCE(sat)
VBE(sat)
SMALL-SIGNAL CHARACTERISTICS
!2N4123
2N4124
&&
'%' !
**+&
%'' !
,**,
-*
'
2N4123
./'/ !
2N4124
-)01
/ !
2N4123
2N4124
''/ !
2N4123
"##
"
+)
-
%'"#$
2N4124
.'/'/ !
*+3+4*+5
$µ+611*'7
Vdc
Vdc
%
$
%
'%
$'
%
")
www.mccsemi.com
('
#'
&)
#(
#(
2'
%'
&)
MCC
2N4123
2N4124
Figure 2. Switching Times
Figure 1. Capacitance
200
10
100
5.0
TIME (ns)
CAPACITANCE (pF)
7.0
Cibo
3.0
ts
70
50
td
30
tf
Cobo
2.0
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
10.0
7.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE BIAS VOLTAGE (VOLTS)
5.0
20 30 40
SOURCE RESISTANCE = 200
IC = 1 mA
NF, NOISE FIGURE (dB)
SOURCE RESISTANCE = 200
IC = 0.5 mA
8
6
f = 1 kHz
W
m
2
SOURCE RESISTANCE = 500
IC = 100 A
0
0.1
m
0.2
0.4
5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
200
W
1
2
4
10
f, FREQUENCY (kHz)
IC = 1 mA
12
SOURCE RESISTANCE = 1 kΩ
IC = 50 A
4
2.0 3.0
14
W
NF, NOISE FIGURE (dB)
12
10
1.0
Figure 4. Source Resistance
Figure 3. Frequency Variations
IC = 0.5 mA
10
m
IC = 50 A
8
m
IC = 100 A
6
4
2
20
40
0
0.1
100
Figure 5. Current Gain
0.2
0.4
1.0 2.0
4.0
10
20
RS, SOURCE RESISTANCE (kΩ)
40
100
Figure 6. Qutput Admittance
300
100
50
m
hoe, OUTPUT ADMITTANCE ( mhos)
hfe , CURRENT GAIN
tr
20
200
100
70
50
30
20
10
5
2
1
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
5.0
10
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
www.mccsemi.com
5.0
10
MCC
2N4123
2N4124
Figure 7. Input Impedance
Figure 8. Voltage Feedback Ratio
10
h re , VOLTAGE FEEDBACK RATIO (X 10 –4 )
20
5.0
2.0
1.0
0.5
0.2
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
0.2
5.0
0.5
1.0
2.0
IC, COLLECTOR CURRENT (mA)
10
0.1
0.2
5.0
1.0
2.0
0.5
IC, COLLECTOR CURRENT (mA)
10
Figure 9. DC Current Gain
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
TJ = +125°C
1.0
VCE = 1 V
+25°C
0.7
– 55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
Figure 10. Collector Saturation Region
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
hie , INPUT IMPEDANCE (kΩ )
10
1.0
TJ = 25°C
0.8
IC = 1 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
IB, BASE CURRENT (mA)
0.7
1.0
2.0
www.mccsemi.com
3.0
5.0
7.0
10
MCC
2N4123
2N4124
Figure 11. "ON" Voltages
Figure 12. Temperature Coefficients
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1.2
TJ = 25°C
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
1.0
0.8
VBE @ VCE = 1 V
0.6
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
200
1.0
0.5
+25°C to +125°C
qVC for VCE(sat)
0
– 55°C to +25°C
– 0.5
– 55°C to +25°C
– 1.0
+25°C to +125°C
qVB for VBE(sat)
– 1.5
– 2.0
0
20
40
60
80 100 120 140 160
IC, COLLECTOR CURRENT (mA)
www.mccsemi.com
180 200