MCC BC546,B BC547,A,B,C BC548,A,B,C omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features NPN Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration Bottom View C B E Mechanical Data TO-92 A E l Case: TO-92, Molded Plastic l Polarity: indicated as above. B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Collector-Base Voltage BC546 BC547 BC548 BC546 BC547 BC548 Emitter-Base Voltage Symbol Value 65 VCEO 45 30 80 VCBO 50 30 VEBO 6.0 Collector Current(DC) IC Power Dissipation@TA=25oC Pd Power Dissipation@TC=25oC Pd Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature Unit C V V V 100 625 5.0 1.5 12 mA mW mW/oC W mW/oC 200 o D G DIMENSIONS RqJA RqJC 83.3 Tj, TSTG -55~150 C/W o C/W o C DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 MAX .185 .185 --.020 .145 .105 www.mccsemi.com MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC BC546 thru BC548C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) BC546 BC547 BC548 V(BR)CEO 65 45 30 — — — — — — V Collector–Base Breakdown Voltage (IC = 100 µAdc) BC546 BC547 BC548 V(BR)CBO 80 50 30 — — — — — — V Emitter–Base Breakdown Voltage (IE = 10 A, IC = 0) BC546 BC547 BC548 V(BR)EBO 6.0 6.0 6.0 — — — — — — V ON CHARACTERISTICS DC Current Gain (IC = 10 µA, VCE = 5.0 V) hFE — BC547A/548A BC546B/547B/548B BC548C — — — 90 150 270 — — — (IC = 2.0 mA, VCE = 5.0 V) BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C 110 110 110 110 200 420 — — — 180 290 520 450 800 800 220 450 800 (IC = 100 mA, VCE = 5.0 V) BC547A/548A BC546B/547B/548B BC548C — — — 120 180 300 — — — — --- 0.3 — — 1.0 0.55 — — — 0.7 0.77 150 150 150 300 300 300 — — — Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base–Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) V V V SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC546 BC547 BC548 MHz Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Cobo — 1.7 4.5 pF Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Cibo — 10 — pF 125 125 125 240 450 — — 220 330 600 500 900 260 500 900 — — — 2.0 2.0 2.0 10 10 10 Small–Signal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 k, f = 1.0 kHz, ∆f = 200 Hz) hfe BC546 BC547/548 BC547A/548A BC546B/547B/548B BC547C/548C — NF BC546 BC547 BC548 dB www.mccsemi.com MCC BC546 thru BC548C 1.0 VCE = 10 V TA = 25°C 1.5 0.8 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 Figure 1. Normalized DC Current Gain 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 Figure 2. “Saturation” and “On” Voltages θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25°C 0.9 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 20 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 3. Collector Saturation Region 100 Figure 4. Base–Emitter Temperature Coefficient 10 C, CAPACITANCE (pF) 7.0 TA = 25°C 5.0 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances 20 40 f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) BC547/BC548 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 6. Current–Gain – Bandwidth Product www.mccsemi.com 50 MCC BC546 thru BC548C BC547/BC548 TA = 25°C VCE = 5 V TA = 25°C 0.8 VBE(sat) @ IC/IB = 10 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 1.0 2.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 50 100 200 50 100 200 Figure 8. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 5.0 10 20 -1.0 -1.4 -1.8 θVB for VBE -55°C to 125°C -2.2 -2.6 -3.0 Figure 9. Collector Saturation Region 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) Figure 10. Base–Emitter Temperature Coefficient BC546 f, T CURRENT-GAIN - BANDWIDTH PRODUCT 40 C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 Cob 4.0 2.0 0.1 0.2 0.5 5.0 1.0 2.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance 50 100 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 12. Current–Gain – Bandwidth Product www.mccsemi.com