MCC BC556,B BC557,A,B,C BC558,B omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration Bottom View C B E Mechanical Data TO-92 A E l Case: TO-92, Molded Plastic l Polarity: indicated as above. B Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Collector-Emitter Voltage Collector-Base Voltage BC556 BC557 BC558 BC556 BC557 BC558 Emitter-Base Voltage Symbol Value -65 VCEO -45 -30 -80 VCBO -50 -30 VEBO -5.0 Collector Current(DC) IC Power Dissipation@TA=25oC Pd Power Dissipation@TC=25oC Pd Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Case Operating & Storage Temperature -100 625 5.0 1.5 12 Unit C V V D V mA mW mW/oC W mW/oC G DIMENSIONS RqJA RqJC 200 83.3 Tj, TSTG -55~150 o C/W o C/W o C DIM A B C D E G INCHES MIN .175 .175 .500 .016 .135 .095 www.mccsemi.com MAX .185 .185 --.020 .145 .105 MM MIN 4.45 4.46 12.7 0.41 3.43 2.42 MAX 4.70 4.70 --0.63 3.68 2.67 NOTE MCC BC556 thru BC558B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max –65 –45 –30 — — — — — — –80 –50 –30 — — — — — — –5.0 –5.0 –5.0 — — — — — — — — — 120 120 120 120 180 420 — — — 90 150 270 — — — 170 290 500 120 180 300 — — — 500 800 800 220 460 800 — — — — --- –0.3 — — –1.0 –0.55 — –0.62 –0.7 –0.7 –0.82 — — — 280 320 360 — — — — 3.0 6.0 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 µAdc) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) V(BR)CEO BC556 BC557 BC558 V V(BR)CBO BC556 BC557 BC558 V V(BR)EBO BC556 BC557 BC558 V ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 V) (IC = –2.0 mAdc, VCE = –5.0 V) (IC = –100 mAdc, VCE = –5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C Collector – Emitter Saturation Voltage (IC = –100mAdc, IB = –5.0 mAdc) VCE(sat) Base – Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0mAdc) VBE(sat) Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc) VBE(on) — V V V SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz) Output Capacitance (VCB = –10 V, IC = 0, f = 1.0 MHz) fT BC556 BC557 BC558 Cob MHz www.mccsemi.com pF MCC BC556 thru BC558B BC557/BC558 1.5 –1.0 TA = 25°C –0.9 VCE = –10 V TA = 25°C VBE(sat) @ IC/IB = 10 –0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 –0.7 VBE(on) @ VCE = –10 V –0.6 –0.5 –0.4 –0.3 –0.2 0.3 VCE(sat) @ IC/IB = 10 –0.1 0.2 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 IC, COLLECTOR CURRENT (mAdc) 0 –0.1 –0.2 –100 –200 Figure 1. Normalized DC Current Gain –1.2 IC = –10 mA IC = –50 mA IC = –200 mA IC = –100 mA IC = –20 mA –0.4 –0.02 θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR–EMITTER VOLTAGE (V) –1.6 –55°C to +125°C 1.2 1.6 2.0 2.4 2.8 –10 –20 –0.1 –1.0 IB, BASE CURRENT (mA) –0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 –0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –10 –1.0 IC, COLLECTOR CURRENT (mA) –100 Figure 4. Base–Emitter Temperature Coefficient f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) –100 1.0 TA = 25°C 0 –50 Figure 2. “Saturation” and “On” Voltages –2.0 –0.8 –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) 400 300 200 150 VCE = –10 V TA = 25°C 100 80 60 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current–Gain – Bandwidth Product www.mccsemi.com MCC BC556 thru BC558B BC556 TJ = 25°C VCE = –5.0 V TA = 25°C –0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) –1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 –0.6 VBE @ VCE = –5.0 V –0.4 –0.2 0.2 VCE(sat) @ IC/IB = 10 0 –0.2 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (AMP) –0.1 –0.2 –0.5 –50 –100 –200 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage –2.0 –1.0 –1.6 –1.2 IC = –10 mA –20 mA –50 mA –100 mA –200 mA –0.8 –0.4 TJ = 25°C 0 –0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 IB, BASE CURRENT (mA) –5.0 –10 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain –20 –1.4 –1.8 –2.6 –3.0 –0.2 20 Cib 10 8.0 6.0 Cob 4.0 2.0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS) Figure 11. Capacitance –50 –100 –0.5 –1.0 –50 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA) –100 –200 Figure 10. Base–Emitter Temperature Coefficient f T, CURRENT–GAIN – BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C –55°C to 125°C –2.2 Figure 9. Collector Saturation Region 40 θVB for VBE 500 VCE = –5.0 V 200 100 50 20 –100 –1.0 –10 IC, COLLECTOR CURRENT (mA) Figure 12. Current–Gain – Bandwidth Product www.mccsemi.com