MCC BC817-16 THRU BC817-40 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features NPN Small l Ideally Suited for Automatic Insertion l 150oC Junction Temperature l For Switching and AF Amplifier Applications l Epitaxial Planar Die Construction Signal Transistor 310mW Mechanical Data SOT-23 l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 A l Polarity: See Diagram D l Weight: 0.008 grams ( approx.) l Marking: BC817-16 6A BC817-25 6B BC817-40 6C C F B E Maximum Ratings @ 25oC Unless Otherwise Specified H G Charateristic Symbol Value VCEO 45 Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC 800 mA Peak Collector Current ICM 1000 mA IEM 1000 mA Pd 310 mW o Power Dissipation@T s=50 C(Note1) Operating & Storage Temperature Tj, TSTG -55~150 DIMENSIONS V Collector Current Peak Emitter Current J Unit o C DIM A B C D E F G H J K INCHES MIN .110 .083 .047 .035 .070 .018 .0005 .035 .003 .015 MAX .120 .098 .055 .041 .081 .024 .0039 .044 .007 .020 MM MIN 2.80 2.10 1.20 .89 1.78 .45 .013 .89 .085 .37 MAX 3.04 2.64 1.40 1.03 2.05 .60 .100 1.12 .180 .51 NOTE Suggested Solder Pad Layout 2 Note: 1. Device mounted on Ceramic Substrate 0.7mm X 2.5cm area .031 .800 .035 .900 .079 2.000 .037 .950 .037 .950 www.mccsemi.com inches mm MCC BC817-16 thru BC817-40 Electrical Characteristics @25°C unless otherwise specified Characteristic DC Current Gain Current Gain Group -16 -25 -40 Current Gain Group -16 -25 -40 Symbol Min Max Unit Test Condition VCE = 1.0V, IC = 100mA hFE 100 160 250 60 100 170 250 400 600 — — — — Thermal Resistance, Junction to Substrate Backside RqSB — 320 K/W Note 1 Thermal Resistance, Junction to Ambient Air RqJA — 400 K/W Note 1 VCE(SAT) — 0.7 V VBE — 1.2 V VCE = 1.0V, IC = 300mA VCE = 45V VCE = 25V, Tj = 150°C Collector-Emitter Saturation Voltage Base-Emitter Voltage Collector-Emitter Cutoff Current ICES — 100 5.0 nA µA Emitter-Base Cutoff Current IEBO — 100 nA Gain Bandwidth Product Collector-Base Capacitance VCE = 1.0V, IC = 300mA IC = 500mA, IB = 50mA VEB = 4.0V fT 100 — MHz VCE = 5.0V, IC = 10mA, f = 50MHz CCBO — 12 pF VCB = 10V, f = 1.0MHz www.mccsemi.com BC817-16 thru BC817-40 www.mccsemi.com MCC