KSK596 KSK596 Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic TO-92S 1 1.Source 2. Gate 3. Drain Si N-channel Junction FET Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VGDO Gate-Drain Voltage Parameter Ratings -20 Units V IG ID Gate Current 10 mA Drain Current 1 PD Power Dissipation mA 100 mW TJ TSTG Junction Temperature 150 °C Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVGDO Parameter Gate-Drain Breakdown Voltage Test Condition IG= -100uA Min. -20 Typ. Max. Units V -0.6 -1.5 V 350 µA VGS(off) Gate-Source Cut-off Voltage VDS=5V, ID=1µA IDSS Drain Current VDS=5V, VGS=0 100 lYFSl Forward Transfer Admittance VDS=5V, VGS=0, f=1MHz 0.4 Ciss Input Capacitance VDS=5V, VGS=0, f=1MHz 3.5 pF Crss Output Capacitance VDS=5V, VGS=0, f=1MHz 0.65 pF 1.2 ms IDSS Classification Classification A B C IDSS(µA) 100 ~ 170 150 ~ 240 210 ~ 350 ©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002 KSK596 Typical Characteristics 500 1000 IDSS = 200µA 450 ID[µA], DRAIN CURRENT ID[µA], DRAIN CURRENT 350 300 250 VGS = 0 200 150 VGS = -0.1V 100 800 700 600 VGS = 0 500 400 VGS = -0.1V 300 VGS = -0.2V VGS = -0.3V VGS = -0.4V 200 VGS = -0.2V 50 IDSS = 500µA 900 400 100 VGS = -0.4V VGS = -0.3V 0 VGS = -0.5V 0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 Figure 1. ID-VDS lYFSl [ms], FORWARD TRANSFER ADMITTANCE VDS = 5V ID[mA], DRAIN CURRENT 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -1.4 -1.2 -1.0 -0.8 -0.6 5 6 7 8 9 10 Figure 2. ID-VDS 1.6 0.0 -1.6 4 VDS [V], DRAIN-SOURCE VOLTAGE VDS[V], DRAIN-SOURCE VOLTAGE -0.4 -0.2 0.0 10 VDS = 5V VGS = 0 f=1kHz 1 0.1 0.1 VGS[V], GATE-SOURCE VOLTAGE 1 IDSS[mA], DRAIN CURRENT Figure 4. yFS -IDSS Figure 3. ID-VGS -10 100 VDS = 5V ID = 1µA Ciss[pF], INPUT CAPACITANCE VGS(off)[V], GATE-SOURCE CUT-OFF VOLTAGE VGS = -0.6V 0 -1 - 0.1 0.1 1 10 1 1 10 IDSS[mA], DRAIN CURRENT VDS[V], DRAIN-SOURCE VOLTAGE Figure 5. VGS(off)-IDSS ©2002 Fairchild Semiconductor Corporation Figure 6. CISS-VDS Rev. B2, November 2002 KSK596 Typical Characteristics (Continued) 140 VGS = 0 f = 1MHz 120 PC[mW], POWER DISSIPATION Crss[pF], OUTPUT CAPACITANCE 10 1 100 80 60 40 20 0 0.1 1 10 VDS[V], DRAIN-SOURCE VOLTAGE Figure 7. CRSS-VDS ©2002 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 o Ta[ C], AMBIENT TEMPERATURE Figure 8. PD-TA Rev. B2, November 2002 KSK596 Package Dimensions TO-92S 4.00 ±0.20 (1.10) 3.70 ±0.20 2.31 ±0.20 14.47 ±0.30 0.66 MAX. 0.49 ±0.10 1.27TYP [1.27±0.20] 1.27TYP [1.27±0.20] +0.10 0.35 –0.05 2.86 ±0.20 0.77 ±0.10 3.72 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1