Fairchild FQP12N60C 600v n-channel mosfet Datasheet

QFET
®
FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
•
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V
Low gate charge ( typical 48 nC)
Low Crss ( typical 21pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
D
G
G DS
TO-220
FQP Series
TO-220F
GD S
FQPF Series
S
Absolute Maximum Ratings
Symbol
Parameter
FQP12N60C
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FQPF12N60C
600
(Note 1)
Unit
V
12
7.4
12*
7.4*
A
A
48
48*
A
± 30
V
Single Pulsed Avalanche Energy
(Note 2)
870
mJ
Avalanche Current
(Note 1)
12
A
EAR
Repetitive Avalanche Energy
(Note 1)
22.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
(TC = 25°C)
- Derate above 25°C
225
1.78
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
51
0.41
W
W/°C
-55 to +150
°C
300
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
FQP12N60C
FQPF12N60C
Unit
RθJC
Symbol
Thermal Resistance, Junction-to-Case
Parameter
0.56
2.43
°C/W
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
©2007 Fairchild Semiconductor Corporation
FQP12N60C / FQPF12N60C Rev. B1
1
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
September 2007
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQP12N60C
FQP12N60C
TO-220
-
-
50
FQPF12N60C
FQPF12N60C
TO-220F
-
-
50
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
600
--
--
V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
2.0
--
4.0
V
--
0.53
0.65
Ω
--
13
--
S
--
1760
2290
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 6A
gFS
Forward Transconductance
VDS = 40V, ID = 6A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
182
235
pF
--
21
28
pF
--
30
70
ns
--
85
180
ns
--
140
280
ns
--
90
190
ns
--
48
63
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 300V, ID = 12A
RG = 25Ω
(Note 4, 5)
VDS = 400V, ID = 12A
VGS = 10V
(Note 4, 5)
--
8.5
--
nC
--
21
--
nC
12
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
48
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 12A
--
--
1.4
V
trr
Reverse Recovery Time
420
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 12A
dIF/dt =100A/µs
--
Qrr
--
4.9
--
µC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 12A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FQP12N60C / FQPF12N60C Rev. B1
2
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Package Marking and Ordering Information
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
1
10
1
10
ID, Drain Current [A]
ID, Drain Current [A]
Top :
o
150 C
o
-55 C
o
25 C
0
10
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
0
10
※ Notes :
1. VDS = 40V
2. 250µs Pulse Test
-1
10
0
1
10
10
2
4
VDS, Drain-Source Voltage [V]
8
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
IDR, Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
VGS = 10V
1.0
VGS = 20V
0.5
6
VGS, Gate-Source Voltage [V]
1
10
0
10
150℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
25℃
※ Note : TJ = 25℃
-1
0
5
10
15
20
25
30
10
35
0.2
0.4
0.6
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3500
VGS, Gate-Source Voltage [V]
Capacitance [pF]
Coss
1500
1000
1.4
VDS = 120V
Ciss
2000
1.2
12
10
2500
1.0
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
3000
0.8
VSD, Source-Drain voltage [V]
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
500
VDS = 300V
VDS = 480V
8
6
4
2
※ Note : ID = 12A
0
-1
10
0
0
10
1
10
FQP12N60C / FQPF12N60C Rev. B1
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
www.fairchildsemi.com
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.9
0.8
-100
-50
0
50
100
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 6.0 A
0.5
0.0
-100
200
100
10 µs
1 ms
10 ms
1
100 ms
DC
0
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
200
10 µs
100 µs
100 µs
10
150
Operation in This Area
is Limited by R DS(on)
10
ID, Drain Current [A]
ID, Drain Current [A]
50
Figure 9-2. Maximum Safe Operating Area
for FQPF12N60C
2
Operation in This Area
is Limited by R DS(on)
2
0
o
Figure 9-1. Maximum Safe Operating Area
for FQP12N60C
10
-50
TJ, Junction Temperature [ C]
o
TJ, Junction Temperature [ C]
1
10
1 ms
10 ms
100 ms
DC
0
10
※ Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
-2
10
0
1
10
2
10
-2
10
3
10
10
0
10
VDS, Drain-Source Voltage [V]
1
10
2
10
3
10
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
14
ID, Drain Current [A]
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
FQP12N60C / FQPF12N60C Rev. B1
4
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FQP12N60C
Zθ JC(t), Thermal Response
10
0
D = 0 .5
10
0 .2
-1
※ N o te s :
1 . Z θ J C (t) = 0 .5 6 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .1
0 .0 5
10
10
PDM
0 .0 2
0 .0 1
-2
t1
s in g le p u ls e
-5
10
-4
10
-3
10
-2
10
t2
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Zθ JC(t), Thermal Response
Figure 11-2. Transient Thermal Response Curve for FQPF12N60C
10
D = 0 .5
0
0 .2
※ N o te s :
1 . Z θ J C (t) = 2 .4 3 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C (t)
0 .1
10
0 .0 5
-1
0 .0 2
PDM
0 .0 1
t1
10
s in g le p u ls e
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t2
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FQP12N60C / FQPF12N60C Rev. B1
5
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FQP12N60C / FQPF12N60C Rev. B1
6
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQP12N60C / FQPF12N60C Rev. B1
7
www.fairchildsemi.com
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
FQP12N60C / FQPF12N60C Rev. B1
8
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Mechanical Dimensions
(Continued)
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FQP12N60C / FQPF12N60C Rev. B1
9
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
Mechanical Dimensions
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Advance Information
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This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
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First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
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Rev. I31
10
FQP12N60C / FQPF12N60C Rev. B1
www.fairchildsemi.com
FQP12N60C / FQPF12N60C 600V N-Channel MOSFET
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