Suntac IRF830FP Power mosfet Datasheet

IRF830
!
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This Power MOSFET is designed for low voltage, high
‹ Higher Current Rating
speed power switching applications such as switching
‹ Lower rDS(ON), Lower Capacitances
regulators, conveters, solenoid and relay drivers.
‹ Lower Total Gate Charge
‹ Tighter VSD Specifications
‹ Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
D
TO-220/TO-220FP
SO URCE
DRAIN
G ATE
Top View
G
S
1
2
N-Channel MOSFET
3
ORDERING INFORMATION
Part Number
Package
.................IRF830....................................................TO-220
.................IRF830FP
TO-220FP
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Symbol
Value
Unit
A
ID
5.0
IDM
18
Gate-to-Source Voltage Ё Continue
VGS
±20
Total Power Dissipation
PD
Ё Pulsed (Note 1)
Derate above 25к
Single Pulse Avalanche Energy (Note 2)
Operating and Storage Temperature Range
Thermal Resistance Ё Junction to Case
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
V
96
W
0.77
W/к
EAS
125
mJ
TJ, TSTG
-55 to 150
к
șJC
1.70
к/W
șJA
62
TL
300
к
Page 1
IRF830
!
POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
CIRF830
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 ӴA)
Symbol
Min
V(BR)DSS
500
Typ
Max
Units
V
ӴA
Drain-Source Leakage Current
(VDS = 500V, VGS = 0 V)
IDSS
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = -20 V, VDS = 0 V)
IGSSR
-100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 ӴA)
VGS(th)
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 3)
RDS(on)
25
Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 3)
Input Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
(VDD = 250 V, ID = 5 A,
RG = 9.1ȍ, VGS = 10 V) (Note 3)
Fall Time
Total Gate Charge
gFS
2.0
1.5
2.8
ȍ
mhos
Ciss
520
730
Coss
170
240
pF
pF
Crss
11
20
pF
td(on)
7.0
10
tr
9.0
20
ns
ns
td(off)
20
40
ns
tf
10
20
ns
Qg
10
Qgs
2
nC
nC
Qgd
3
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
Qrr
1.8
µC
(VDS = 400V, ID = 5A
VGS = 10 V) (Note 3)
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE CHARACTERISTICS
Reverse Recovery Charge
Forward Turn-On Time
IF = 5A, di/dt = 100A/µs , TJ = 25к
Reverse Recovery Time
Diode Forward Voltage
IS = 5A, VGS = 0 V
ton
**
trr
415
VSD
ns
1.5
V
Note
(1) Repetitive rating; pulse width limited by max. junction temperature
(2) VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25ȍ
(3) Pulse.Test:.Duty Cycle Љ2% , Pulse.Width Љ300µs Љ
Љ к
** Negligible, Dominated by circuit inductance
P
Page 2
!
IRF830
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Page 3
IRF830
!
POWER MOSFET
PACKAGE DIMENSION
TO-220
A
D
c1
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
E
F
φ
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
b1
L1
A1
c
e
b
e1
φ
Side View
Front View
TO-220FP
C
I
0
R1
.5
0
0.1
8²
1
.
R3
B
J
H
Q
D
R1
.5
0
A
A
B
C
D
E
E
G
H
I
O
P
K
J
K
0
.6
R1
M
N
O
P
G
Q
b
R
b
b1
b2
e
N
M
b2
b1
e
Front View
R
Side View
Back View
Page 4
Similar pages