BCD AP2138R-1.2TRG1 Ultra low quiescent current cmos ldo Datasheet

Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
General Description
Features
The AP2138/2139 series are CMOS-based positive
voltage regulator ICs. Each of these ICs consists of a
voltage reference, an error amplifier, a resistor network
for setting output voltage and a current limit circuit for
current protection.
·
·
·
·
·
The difference between AP2138 and AP2139 is the
AP2139 has an enable circuit with a quick discharge
function.
·
·
·
These ICs feature high output voltage accuracy,
extremely low quiescent current and low dropout voltage which make them ideal for use in various power
sources for portable applications.
·
·
·
The AP2138/2139 series have 1.2V, 1.4V, 1.5V, 1.8V,
2.5V, 2.8V, 3.0V, 3.3V, 3.6V and 4.0V fixed output
voltage versions.
Ultra-low Quiescent Current: 1.0μA Typical
Output Voltages: 1.2V, 1.4V, 1.5V, 1.8V, 2.5V,
2.8V, 3.0V, 3.3V, 3.6V and 4.0V
High Output Voltage Accuracy: ±2%
Output Current: 250mA
Low Dropout Voltage:
25mV Typical at IOUT=10mA and VOUT=3V
200mV Typical at IOUT=100mA and VOUT=3V
Line Regulation: 6mV Typical
Load Regulation: 25mV Typical
Low Output Voltage Temperature Coefficient:
±100ppm/oC
Low Standby Current: 0.1μA Typical (AP2139)
Active Quick Output Discharge (AP2139)
Logic-controlled Enable (AP2139)
Applications
The AP2138 series is available in SOT-23-3 and SOT89 packages, AP2139 series is available in SOT-23-5
package.
SOT-23-3
AP2138/2139
·
·
·
·
·
·
·
Battery Powered Equipment
Reference Voltage Sources
Cameras, Video Cameras
Portable AV Systems
Mobile Phones
Communication Tools
Portable Games
SOT-23-5
SOT-89
Figure 1. Package Types of AP2138/2139
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
1
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Pin Configuration
K Package
(SOT-23-5)
N Package
(SOT-23-3)
2
VIN
VOUT
3
1
GND
VIN
1
GND
2
CE
3
5
VOUT
4
NC
RA Package
(SOT-89)
R Package
(SOT-89)
3
VOUT
3
VIN
2
VIN
2
GND
1
GND
1
VOUT
Figure 2. Pin Configuration of AP2138/2139 (Top View)
Pin Description
Pin Number
Pin Name
Function
SOT-23-3
SOT-89 (R)
SOT-89 (RA)
SOT-23-5
1
1
2
2
GND
Ground
2
3
1
5
VOUT
Regulated output voltage
3
2
3
1
VIN
Input voltage
3
CE
Active high enable input. Logic high=enable, logic
low=shutdown
4
NC
No connection
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Functional Block Diagram
3 (2)[3]
VIN
2 (3)[1]
VOUT
1 (1)[2]
GND
VREF
CURRENT LIMIT
AP2138
1
VIN
5
A(B)[C]
A: SOT-23-3
B: SOT-89 (R)
C: SOT-89 (RA)
VOUT
VREF
CURRENT
LIMIT
CE
3
2
GND
AP2139
Figure 3. Functional Block Diagram of AP2138/2139
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Ordering Information
AP213X
-
Circuit Type
G1: Green
8: AP2138
9: AP2139
TR: Tape and Reel
1.2:
1.4:
1.5:
1.8:
2.5:
2.8:
3.0:
3.3:
3.6:
4.0:
A: Active High
with Built-in Resistor
Blank: No Enable Function
Package
N: SOT-23-3
K: SOT-23-5
R/RA: SOT-89
Package
Temperature
Range
SOT-23-3
SOT-89
-40 to 85oC
-40 to 85oC
Condition
Part Number
Fixed Output 1.2V
Fixed Output 1.4V
Fixed Output 1.5V
Fixed Output 1.8V
Fixed Output 2.5V
Fixed Output 2.8V
Fixed Output 3.0V
Fixed Output 3.3V
Fixed Output 3.6V
Fixed Output 4.0V
Marking ID
Packing
Type
1.2V
AP2138N-1.2TRG1 GA3
Tape & Reel
1.4V
AP2138N-1.4TRG1 GG1
Tape & Reel
1.5V
AP2138N-1.5TRG1 GG2
Tape & Reel
1.8V
AP2138N-1.8TRG1 GG4
Tape & Reel
2.5V
AP2138N-2.5TRG1 GG5
Tape & Reel
2.8V
AP2138N-2.8TRG1 GG6
Tape & Reel
3.0V
AP2138N-3.0TRG1 GG3
Tape & Reel
3.3V
AP2138N-3.3TRG1 GG7
Tape & Reel
3.6V
AP2138N-3.6TRG1 GG8
Tape & Reel
4.0V
AP2138N-4.0TRG1 GE9
Tape & Reel
1.2V(R)
AP2138R-1.2TRG1 G42C
Tape & Reel
1.4V (R)
AP2138R-1.4TRG1 G42D
Tape & Reel
1.5V (R)
AP2138R-1.5TRG1 G42E
Tape & Reel
1.8V (R)
AP2138R-1.8TRG1 G42F
Tape & Reel
2.5V (R)
AP2138R-2.5TRG1 G42G
Tape & Reel
2.8V (R)
AP2138R-2.8TRG1 G42H
Tape & Reel
3.0V (R)
AP2138R-3.0TRG1 G42J
Tape & Reel
3.3V (R)
AP2138R-3.3TRG1 G42K
Tape & Reel
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Ordering Information (Continued)
Package
Temperature Range
SOT-89
SOT-23-5
-40 to 85oC
-40 to 85oC
Condition
Part Number
Packing
Type
Marking ID
1.2V (RA)
AP2138RA-1.2TRG1 G13L
Tape & Reel
1.4V (RA)
AP2138RA-1.4TRG1 G13M
Tape & Reel
1.5V (RA)
AP2138RA-1.5TRG1 G13N
Tape & Reel
1.8V (RA)
AP2138RA-1.8TRG1 G13O
Tape & Reel
2.5V (RA)
AP2138RA-2.5TRG1 G13P
Tape & Reel
2.8V (RA)
AP2138RA-2.8TRG1 G33J
Tape & Reel
3.0V (RA)
AP2138RA-3.0TRG1 G37J
Tape & Reel
3.3V (RA)
AP2138RA-3.3TRG1 G41J
Tape & Reel
Active High with Built-in Resistor
AP2139AK-1.2TRG1 G7R
Tape & Reel
Active High with Built-in Resistor
AP2139AK-1.4TRG1 G6L
Tape & Reel
Active High with Built-in Resistor
AP2139AK-1.5TRG1 G6M
Tape & Reel
Active High with Built-in Resistor
AP2139AK-1.8TRG1 G6N
Tape & Reel
Active High with Built-in Resistor
AP2139AK-2.5TRG1 G6P
Tape & Reel
Active High with Built-in Resistor
AP2139AK-2.8TRG1 G6Q
Tape & Reel
Active High with Built-in Resistor
AP2139AK-3.0TRG1 G6J
Tape & Reel
Active High with Built-in Resistor
AP2139AK-3.3TRG1 G6R
Tape & Reel
BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green.
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Absolute Maximum Ratings (Note 1)
Parameter
Symbol
Value
Unit
Input Voltage
VIN
7.0
V
Enable Input Voltage (AP2139)
VCE
-0.3 to VIN+0.3
V
TLEAD
260
o
TJ
150
o
Storage Temperature Range
TSTG
-65 to 150
oC
ESD (Machine Model)
ESD
350
V
ESD (Human Body Model)
ESD
2000
V
Thermal Resistance (Note 2)
θJA
Lead Temperature
Junction Temperature
C
C
SOT-23-3
250
SOT-23-5
250
SOT-89
165
oC/W
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, TJ(max), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD(max)=(TJ(max) TA)/θJA. Exceeding the maximum allowable power dissipation will result in excessive die temperature.
Recommended Operating Conditions
Parameter
Symbol
Min
Max
Unit
Input Voltage
VIN
2.5
6.6
V
Operating Ambient Temperature Range
TA
-40
85
oC
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics
AP2138/2139-1.2 Electrical Characteristics
(VIN=2.5V, VCE=2.5V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless
otherwise specified.)
Parameter
Input Voltage
Output Voltage
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
1.200
1.224
V
VIN
1.176
VOUT
IQ
IOUT=0
1.0
1.5
μA
Standby Current (AP2139)
ISTD
VCE=0
0.1
1
μA
Output Current
IOUT
Quiescent Current
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
2.2V≤VIN≤6V
6
18
mV
IOUT=10mA
100
300
IOUT=30mA
400
700
IOUT=100mA
700
1000
IOUT=250mA
1000
1300
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
VDROP
ΔVOUT/ΔT
±140
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
50
mA
0.2
μA
ISHORT
CE Pull-down Constant
Current (AP2139)
IPD
CE Input Logic-high
Voltage (AP2139)
VIH
CE Input Logic-low
Voltage (AP2139)
VIL
Thermal Resistance
mV
θJC
VOUT=0
1.2
V
0.3
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
51.1
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics(Continued)
AP2138/2139-1.4 Electrical Characteristics
(VIN=2.5V, VCE=2.5V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless
otherwise specified.)
Parameter
Input Voltage
Output Voltage
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
1.400
1.428
V
VIN
1.372
VOUT
IQ
IOUT=0
1.0
1.5
μA
Standby Current (AP2139)
ISTD
VCE=0
0.1
1
μA
Output Current
IOUT
Quiescent Current
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
2.4V≤VIN≤6V
6
18
mV
IOUT=10mA
100
300
IOUT=30mA
400
700
IOUT=100mA
600
900
IOUT=250mA
1000
1300
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
VDROP
ΔVOUT/ΔT
±140
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
50
mA
0.2
μA
ISHORT
CE Pull-down Constant
Current (AP2139)
IPD
CE Input Logic-high
Voltage (AP2139)
VIH
CE Input Logic-low
Voltage (AP2139)
VIL
Thermal Resistance
mV
θJC
VOUT=0
1.2
V
0.3
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
51.1
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics (Continued)
AP2138/2139-1.5 Electrical Characteristics
(VIN=2.5V, VCE=2.5V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless
otherwise specified.)
Parameter
Input Voltage
Output Voltage
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
1.500
1.530
V
VIN
VOUT
1.470
IQ
IOUT=0
1.0
1.5
μA
Standby Current (AP2139)
ISTD
VCE=0
0.1
1
μA
Output Current
IOUT
Quiescent Current
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
2.5V≤VIN≤6V
6
18
mV
IOUT=10mA
100
300
IOUT=30mA
200
400
IOUT=100mA
600
900
IOUT=250mA
1000
1300
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
VDROP
ΔVOUT/ΔT
±150
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
50
mA
0.2
μA
ISHORT
CE Pull-down Constant
Current (AP2139)
IPD
CE Input Logic-high
Voltage (AP2139)
VIH
CE Input Logic-low
Voltage (AP2139)
VIL
Thermal Resistance
mV
θJC
VOUT=0
1.2
V
0.3
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
51.1
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics (Continued)
AP2138/2139-1.8 Electrical Characteristics
(VIN=2.8V, VCE=2.8V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless
otherwise specified.)
Parameter
Input Voltage
Output Voltage
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
1.800
1.836
V
VIN
VOUT
1.764
IQ
IOUT=0
1.0
1.5
μA
Standby Current (AP2139)
ISTD
VCE=0
0.1
1
μA
Output Current
IOUT
Quiescent Current
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
2.8V≤VIN≤6V
6
18
mV
IOUT=10mA
25
100
IOUT=30mA
120
250
IOUT=100mA
400
700
IOUT=250mA
850
1100
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
VDROP
ΔVOUT/ΔT
±180
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
50
mA
0.2
μA
ISHORT
CE Pull-down Constant
Current (AP2139)
IPD
CE Input Logic-high
Voltage (AP2139)
VIH
CE Input Logic-low
Voltage (AP2139)
VIL
Thermal Resistance
mV
θJC
VOUT=0
1.2
V
0.3
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
51.1
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics (Continued)
AP2138/2139-2.5 Electrical Characteristics
(VIN=3.5V, VCE=3.5V (AP2139), TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless
otherwise specified.)
Parameter
Input Voltage
Output Voltage
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
2.500
2.550
V
VIN
VOUT
2.450
IQ
IOUT=0
1.0
1.5
μA
Standby Current (AP2139)
ISTD
VCE=0
0.1
1
μA
Output Current
IOUT
Quiescent Current
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
3.5V≤VIN≤6V
6
18
mV
IOUT=10mA
25
100
IOUT=30mA
100
250
IOUT=100mA
250
500
IOUT=250mA
650
1000
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
VDROP
ΔVOUT/ΔT
±250
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
50
mA
0.2
μA
ISHORT
CE Pull-down Constant
Current (AP2139)
IPD
CE Input Logic-high
Voltage (AP2139)
VIH
CE Input Logic-low
Voltage (AP2139)
VIL
Thermal Resistance
mV
θJC
VOUT=0
1.2
V
0.3
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
51.1
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics (Continued)
AP2138/2139-2.8 Electrical Characteristics
(VIN=3.8V, VCE=3.8V (AP2139), TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless
otherwise specified.)
Parameter
Input Voltage
Output Voltage
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
2.800
2.856
V
VIN
VOUT
2.744
IQ
IOUT=0
1.0
1.5
μA
Standby Current (AP2139)
ISTD
VCE=0
0.1
1
μA
Output Current
IOUT
Quiescent Current
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
3.8V≤VIN≤6V
6
18
mV
IOUT=10mA
25
100
IOUT=30mA
70
200
IOUT=100mA
250
500
IOUT=250mA
500
800
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
VDROP
ΔVOUT/ΔT
±280
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
50
mA
0.2
μA
ISHORT
CE Pull-down Constant
Current (AP2139)
IPD
CE Input Logic-high
Voltage (AP2139)
VIH
CE Input Logic-low
Voltage (AP2139)
VIL
Thermal Resistance
mV
θJC
VOUT=0
1.2
V
0.3
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
51.1
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics (Continued)
AP2138/2139-3.0 Electrical Characteristics
(VIN=4V, VCE=4V (AP2139), TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Input Voltage
Output Voltage
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
3.000
3.060
V
VIN
2.940
VOUT
IQ
IOUT=0
1.0
1.5
μA
Standby Current (AP2139)
ISTD
VCE=0
0.1
1
μA
Output Current
IOUT
Quiescent Current
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
4V≤VIN≤6V
6
18
mV
IOUT=10mA
25
100
IOUT=30mA
70
200
IOUT=100mA
200
400
IOUT=250mA
450
700
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
VDROP
ΔVOUT/ΔT
±300
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
50
mA
0.2
μA
ISHORT
CE Pull-down Constant
Current (AP2139)
IPD
CE Input Logic-high
Voltage (AP2139)
VIH
CE Input Logic-low
Voltage (AP2139)
VIL
Thermal Resistance
mV
θJC
VOUT=0
1.2
V
0.3
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
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Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics (Continued)
AP2138/2139-3.3 Electrical Characteristics
(VIN=4.3V, VCE=4.3V (AP2139),TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless
otherwise specified.)
Parameter
Input Voltage
Output Voltage
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
3.300
3.366
V
VIN
3.234
VOUT
IQ
IOUT=0
1.0
1.5
μA
Standby Current (AP2139)
ISTD
VCE=0
0.1
1
μA
Output Current
IOUT
Quiescent Current
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
4.3V≤VIN≤6V
6
18
mV
IOUT=10mA
20
100
IOUT=30mA
50
200
IOUT=100mA
160
300
IOUT=250mA
400
600
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
VDROP
ΔVOUT/ΔT
±330
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
50
mA
0.2
μA
ISHORT
CE Pull-down Constant
Current (AP2139)
IPD
CE Input Logic-high
Voltage (AP2139)
VIH
CE Input Logic-low
Voltage (AP2139)
VIL
Thermal Resistance
mV
θJC
VOUT=0
1.2
V
0.3
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
51.1
Jul. 2012 Rev. 2. 3
V
o
C/W
BCD Semiconductor Manufacturing Limited
14
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics (Continued)
AP2138-3.6 Electrical Characteristics
(VIN=4.6V, TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Input Voltage
Output Voltage
Quiescent Current
Output Current
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
3.600
3.672
V
1.0
1.5
μA
VIN
VOUT
IQ
3.528
IOUT=0
IOUT
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
4.6V≤VIN≤6V
6
18
mV
IOUT=10mA
20
100
IOUT=30mA
50
200
IOUT=100mA
160
300
IOUT=250mA
400
600
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
Thermal Resistance
VDROP
mV
ΔVOUT/ΔT
±330
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
VOUT=0
50
mA
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
51.1
ISHORT
θJC
Jul. 2012 Rev. 2. 3
oC/W
BCD Semiconductor Manufacturing Limited
15
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Electrical Characteristics (Continued)
AP2138-4.0 Electrical Characteristics
(VIN=5.0V, TJ=25oC, IOUT=40mA, CIN=COUT=1μF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)
Parameter
Input Voltage
Output Voltage
Quiescent Current
Output Current
Symbol
Conditions
Min
Typ
Max
Unit
6.6
V
4.000
4.080
V
1.0
1.5
μA
VIN
3.920
VOUT
IQ
IOUT=0
IOUT
250
mA
Load Regulation
VRLOAD
1mA≤IOUT≤100mA
25
40
mV
Line Regulation
VRLINE
5V≤VIN≤6V
6
18
mV
IOUT=10mA
20
100
IOUT=30mA
50
200
IOUT=100mA
160
300
IOUT=250mA
400
600
Dropout Voltage
Output Voltage
Temperature Coefficient
Short Circuit Current
Thermal Resistance
VDROP
mV
ΔVOUT/ΔT
±330
μV/oC
(ΔVOUT/VOUT)/ΔT
±100
ppm/oC
VOUT=0
50
mA
SOT-23-3
81.9
SOT-23-5
81.9
SOT-89
51.1
ISHORT
θJC
Jul. 2012 Rev. 2. 3
oC/W
BCD Semiconductor Manufacturing Limited
16
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Typical Performance Characteristics
3.40
4.0
AP2138-3.3
No load
3.5
IOUT=10mA
AP2138-3.3
3.38
IOUT=100mA
3.36
IOUT=150mA
3.34
IOUT=200mA
Output Voltage (V)
Output Voltage (V)
3.0
2.5
2.0
1.5
o
TJ=-40 C
o
TJ=25 C
1.0
IOUT=250mA
3.32
3.30
3.28
3.26
o
3.24
TJ=85 C
0.5
3.22
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
3.20
-40
6.5
-20
0
60
80
100
120
Figure 5. Output Voltage vs. Junction Temperature
3.40
1.6
AP2138-3.3
VIN=4.3V
3.38
3.36
AP2138-3.3
No Load
1.4
o
TJ=25 C
1.2
Quiescent Current(μA)
3.34
Output Voltage (V)
40
Junction Temperature( C)
Figure 4. Output Voltage vs. Input Voltage
3.32
3.30
3.28
3.26
3.24
1.0
0.8
0.6
o
TJ=-40 C
0.4
o
TJ=25 C
o
TJ=85 C
0.2
3.22
3.20
20
o
Input Voltage (V)
0
25
50
75
100
125
150
175
200
225
0.0
250
Output Current (mA)
0
1
2
3
4
5
6
7
8
Input Voltage (V)
Figure 6. Output Voltage vs. Output Current
Figure 7. Quiescent Current vs. Input Voltage
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
17
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Typical Performance Characteristics (Continued)
2.0
50
1.8
45
No Load
40
1.4
Quiescent Current (μA)
Quiescent Current (μA)
1.6
AP2138-3.3
VIN=4.3V
1.2
1.0
0.8
0.6
0.4
35
30
25
20
15
o
TJ=-40 C
10
0.2
o
TJ=25 C
5
0.0
-40
-20
0
20
40
60
0
80
o
Junction Temperature( C)
o
TJ=85 C
0
25
50
75
100
125
150
175
225
250
Figure 9. Quiescent Current vs. Output Current
4.0
4.0
AP2138-3.3
VIN=4.3V
3.5
AP2138-3.3
o
TJ=25 C
3.5
3.0
Output Voltage (V)
3.0
2.5
2.0
1.5
2.5
2.0
1.5
VIN=3.8V
o
TJ=-40 C
1.0
VIN=4.3V
1.0
VIN=6V
o
TJ=25 C
TJ=85 C
0.0
0
50
100
150
200
250
300
350
400
450
500
550
VIN=6.5V
0.5
o
0.5
0.0
200
Output Current (mA)
Figure 8. Quiescent Current vs. Junction Temperature
Output Voltage (V)
AP2138-3.3
VIN=4.3V
600
Output Current (mA)
0
50
100
150
200
250
300
350
400
450
500
550
600
Output Current (mA)
Figure 11. Output Voltage vs. Output Current
Figure 10. Output Voltage vs. Output Current
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
18
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Typical Performance Characteristics (Continued)
550
600
AP2138-3.3
o
TJ=-40 C
550
500
450
IOUT=200mA
400
o
Dropout Voltage (mV)
TJ=85 C
400
350
300
250
200
150
350
IOUT=150mA
300
250
IOUT=100mA
200
150
100
100
IOUT=10mA
50
50
0
IOUT=250mA
AP2138-3.3
o
TJ=25 C
450
Dropout Voltage (mV)
500
0
25
50
75
100
125
150
175
200
225
0
-40
250
-20
0
20
40
60
80
o
Output Current (mA)
Junction Temperature ( C)
Figure 12. Dropout Voltage vs. Output Current
Figure 13. Dropout Voltage vs. Junction Temperature
VOUT
1V/div
VIN
500mV
VOUT
200mV/div
IOUT
50mA/div
Time 2ms/div
Time 100μs/div
Figure 14. Line transient (VIN=4.3 to 5.3V, IOUT=10mA)
Jul. 2012 Rev. 2. 3
Figure 15. Load transient (VIN=4.3V, IOUT=1mA to150mA)
BCD Semiconductor Manufacturing Limited
19
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Typical Performance Characteristics (Continued)
VIN
1V/div
VIN
1V/div
VOUT
1V/div
VOUT
1V/div
Time
200μs/div
Time
200μs/div
Figure 17. Enable Input Response
Figure 16. Start-up Response
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
20
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Typical Application
AP2138-1.4
VIN=2.4V
VIN
VIN
VOUT=1.4V
VOUT
GND
VOUT
COUT
1μF
CIN
1μF
AP2139-3.0
VIN=4V
VIN
VIN
VOUT=3V
VOUT
VOUT
GND
CE
COUT
NC
1μF
CIN
1μF
Note: Filter capacitors are required at the AP2138/2139's input and output. 1μF capacitor is required at the input.
The minimum output capacitance required for stability should be more than 1μF with ESR from 0.01Ω to 100Ω.
Ceramic capacitors are recommended.
Figure 18. Typical Application of AP2138/2139
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
21
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Mechanical Dimensions
SOT-23-3
Unit: mm(inch)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0
8
0.300(0.012)
0.500(0.020)
1.800(0.071)
2.000(0.079)
1.450(0.057)
MAX.
0.950(0.037)
TYP
0.300(0.012)
0.600(0.024)
2.650(0.104)
2.950(0.116)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
°
°
0.000(0.000)
0.150(0.006)
0.900(0.035)
1.300(0.051)
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
22
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Mechanical Dimensions (Continued)
SOT-23-5
Unit: mm(inch)
0.300(0.012)
0.600(0.024)
1.500(0.059)
1.700(0.067)
0.100(0.004)
0.200(0.008)
2.950(0.116)
2.650(0.104)
2.820(0.111)
3.020(0.119)
0.200(0.008)
0.700(0.028)
REF
0.300(0.012)
0.400(0.016)
0°
8°
1.800(0.071)
2.000(0.079)
0.000(0.000)
MAX
1.450(0.057)
0.950(0.037)
TYP
0.150(0.006)
0.900(0.035)
1.300(0.051)
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
23
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO
AP2138/2139
Mechanical Dimensions (Continued)
SOT-89
1.550(0.061)REF
Unit: mm(inch)
4.400(0.173)
4.600(0.181)
1.400(0.055)
1.600(0.063)
1.030(0.041)REF
45
2.300(0.091)
2.600(0.102)
3.950(0.156)
4.250(0.167)
2.060(0.081)REF
3
0.900(0.035)
1.100(0.043)
0.320(0.013)
0.520(0.020)
0.480(0.019)
0.320(0.013)
0.520(0.020)
10
0.350(0.014)
0.450(0.018)
3.000(0.118)
TYP
1.500(0.059)
1.800(0.071)
0.320(0.013)REF
3
2.210(0.087)REF
1.620(0.064)REF
R0.150(0.006)
10
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
24
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
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