Microsemi APTGT200DA120G Boost chopper fast trench field stop igbt power module Datasheet

APTGT200DA120G
Boost chopper
Fast Trench + Field Stop IGBT®
Power Module
VBUS
VCES = 1200V
IC = 200A @ Tc = 80°C
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
CR1
E2
0/VBUS
VBUS
0/VBUS
OUT
E2
G2
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
VCES
Parameter
Collector - Emitter Breakdown Voltage
IC
Continuous Collector Current
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA
Reverse Bias Safe Operating Area
TC = 25°C
Max ratings
1200
280
200
400
±20
890
Tj = 125°C
400A @ 1100V
TC = 25°C
TC = 80°C
TC = 25°C
Unit
V
A
V
W
July, 2006
Q2
G2
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1-5
APTGT200DA120G – Rev 1
OUT
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
APTGT200DA120G
All ratings @ Tj = 25°C unless otherwise specified
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 1200V
Tj = 25°C
VGE =15V
IC = 200A
Tj = 125°C
VGE = VCE , IC = 3 mA
VGE = 20V, VCE = 0V
Dynamic Characteristics
Symbol
Cies
Coes
Cres
Td(on)
Tr
Td(off)
Tf
Td(on)
Tr
Td(off)
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
IRM
Maximum Reverse Leakage Current
IF
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Er
Reverse Recovery Energy
5.0
Min
Chopper diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
1.4
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 200A
R G = 2.7Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 200A
R G = 2.7Ω
VGE = ±15V
Tj = 125°C
VBus = 600V
IC = 200A
Tj = 125°C
R G = 2.7Ω
Fall Time
Tf
Min
Test Conditions
VR=1200V
IF = 200A
VGE = 0V
IF = 200A
VR = 600V
di/dt =2500A/µs
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Typ
1.7
2.0
5.8
Typ
14
0.8
0.6
260
30
420
Max
Unit
350
2.1
µA
6.5
500
V
nA
Max
Unit
V
nF
ns
70
290
50
520
ns
90
20
mJ
20
Min
1200
Typ
Tj = 25°C
Tj = 125°C
Tc = 80°C
Tj = 25°C
Tj = 125°C
200
1.6
1.6
Tj = 25°C
170
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
280
18
36
10
18
Max
350
600
Unit
V
µA
A
2.1
V
ns
µC
July, 2006
Symbol Characteristic
mJ
2-5
APTGT200DA120G – Rev 1
Electrical Characteristics
APTGT200DA120G
Thermal and package characteristics
Symbol Characteristic
Min
IGBT
Diode
RthJC
Junction to Case Thermal Resistance
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.14
0.25
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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3-5
APTGT200DA120G – Rev 1
July, 2006
SP6 Package outline (dimensions in mm)
APTGT200DA120G
Typical Performance Curve
Output Characteristics (VGE =15V)
400
TJ=125°C
V GE=17V
300
IC (A)
IC (A)
T J = 125°C
TJ=25°C
300
Output Characteristics
400
200
VGE =13V
VGE=15V
200
VGE =9V
100
100
0
0
0
1
2
VCE (V)
3
4
0
Transfert Characteristics
350
TJ=25°C
TJ=125°C
E (mJ)
IC (A)
250
200
150
100
TJ=125°C
3
VCE = 600V
VGE = 15V
RG = 2.7Ω
T J = 125°C
40
300
2
VCE (V)
4
Energy losses vs Collector Current
50
400
1
30
Eon
Eoff
Er
20
Eon
10
50
0
0
5
6
7
8
9
10
11
0
12
50
100 150 200 250 300 350 400
IC (A)
V GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
50
450
VCE = 600V
VGE =15V
IC = 200A
T J = 125°C
30
Eon
400
350
300
IF (A)
E (mJ)
40
Eoff
20
Er
250
200
150
VGE =15V
T J=125°C
RG=2.7 Ω
100
10
50
0
0
0
4
8
12
16
Gate Resistance (ohms)
20
0
300
600
900
VCE (V)
1200
1500
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
0.1
0.7
0.08
0.5
0.06
0.3
0.04
0.02
IGBT
0.9
July, 2006
0.14
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
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4-5
APTGT200DA120G – Rev 1
Thermal Impedance (°C/W)
0.16
APTGT200DA120G
Forward Characteristic of diode
400
VCE=600V
D=50%
RG =2.7Ω
TJ=125°C
Tc=75°C
50
ZVS
40
ZCS
30
T J=25°C
350
300
250
IF (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
60
T J=125°C
200
150
20
100
10
Hard
switching
0
0
0
40
TJ =125°C
50
80
120 160
IC (A)
200
240
0
280
0.4
0.8
1.2
1.6
V F (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.3
0.25
0.9
0.2
0.7
0.15
0.5
0.1
0.3
0.05
0.1
0.05
0
0.00001
Diode
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
APTGT200DA120G – Rev 1
July, 2006
rectangular Pulse Duration (Seconds)
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