Mitsubishi M5M51008BKV-10VL 1048576-bit(131072-word by 8-bit)cmos static ram Datasheet

1997-1/21
MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL,
-70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
DESCRIPTION
PIN CONFIGURATION (TOP VIEW)
ADDRESS
INPUTS
FEATURES
Type name
M5M51008BFP,VP,RV,KV,KR-70VL
M5M51008BFP,VP,RV,KV,KR-10VL
M5M51008BFP,VP,RV,KV,KR-12VL
M5M51008BFP,VP,RV,KV,KR-15VL
M5M51008BFP,VP,RV,KV,KR-70VLL
M5M51008BFP,VP,RV,KV,KR-10VLL
M5M51008BFP,VP,RV,KV,KR-12VLL
M5M51008BFP,VP,RV,KV,KR-15VLL
Access
time
(max)
70ns
100ns
120ns
150ns
70ns
100ns
120ns
150ns
Power supply current
VCC
Active stand-by
(1MHz)
(max)
(max)
3.3±0.3V
10mA
60µA
3.0±0.3V
10mA
55µA
3.3±0.3V
10mA
3.0±0.3V
10mA
DATA
INPUTS/
OUTPUTS
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
ADDRESS
A15 INPUT
SELECT
S2 CHIP
INPUT
CONTROL
W WRITE
INPUT
A13
A8
ADDRESS
INPUTS
A9
A11
ENABLE
OE OUTPUT
INPUT
ADDRESS
A10 INPUT
SELECT
S1 CHIP
INPUT
DQ8
DQ7
DQ6 DATA
INPUTS/
DQ5 OUTPUTS
DQ4
Outline 32P2M-A
12µA
11µA
Low stand-by current 0.3µA (typ.)
Directly TTL compatible : All inputs and outputs
Easy memory expansion and power down by S1,S2
Data hold on +2V power supply
Three-state outputs : OR - tie capability
OE prevents data contention in the I/O bus
Common data I/O
Package
M5M51008BFP
············ 32pin 525mil SOP
M5M51008BVP,RV ············ 32pin 8 X 20 mm 2 TSOP
M5M51008BKV,KR ············ 32pin 8 X 13.4 mm 2 TSOP
A11
A9
A8
A13
W
1
32
2
31
3
30
OE
A10
S1
4
29
DQ8
5
28
DQ7
S2
A15
VCC
NC
A16
A14
A12
A7
A6
6
27
7
26
DQ6
DQ5
DQ4
GND
DQ3
DQ2
A5
A4
8
M5M51008BVP,KV
25
9
24
10
23
11
22
12
21
13
20
14
19
15
18
16
17
DQ1
A0
A1
A2
A3
Outline 32P3H-E(VP), 32P3K-B(KV)
APPLICATION
Small capacity memory units
NC 1
A16 2
A14 3
A12 4
5
A7
6
A6
7
A5
8
A4
9
A3
A2 10
A1 11
A0 12
DQ1 13
DQ2 14
DQ3 15
GND 16
M5M51008BFP
The M5M51008BFP,VP,RV,KV,KR are a 1048576-bit CMOS
static RAM organized as 131072 word by 8-bit which are
fabricated using high-performance triple polysilicon CMOS
technology. The use of resistive load NMOS cells and CMOS
periphery result in a high density and low power static RAM.
They are low standby current and low operation current and ideal
for the battery back-up application.
The M5M51008BVP,RV,KV,KR are packaged in a 32-pin thin
small outline package which is a high reliability and high density
surface mount device(SMD).Two types of devices are available.
VP,KV(normal lead bend type package),RV,KR(reverse lead bend
type package). Using both types of devices, it becomes very easy
to design a printed circuit board.
A4
A5
A6
16
17
15
18
14
19
A7
A12
A14
A16
NC
VCC
13
20
12
21
11
22
10
23
8
25
A15
S2
7
26
6
27
W
A13
A8
5
28
4
29
3
30
A9
A11
2
31
1
32
9
M5M51008BRV,KR
24
A3
A2
A1
A0
DQ1
DQ2
DQ3
GND
DQ4
DQ5
DQ6
DQ7
DQ8
S1
A10
OE
Outline 32P3H-F(RV), 32P3K-C(KR)
NC : NO CONNECTION
1
MITSUBISHI
ELECTRIC
1997-1/21
MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL,
-70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
FUNCTION
The operation mode of the M5M51008B series are determined by
a combination of the device control inputs S1,S2,W and OE.
Each mode is summarized in the function table.
A write cycle is executed whenever the low level W overlaps with
the low level S 1 and the high level S2. The address must be set up
before the write cycle and must be stable during the entire cycle.
The data is latched into a cell on the trailing edge of W,S1 or
S2,whichever occurs first,requiring the set-up and hold time
relative to these edge to be maintained. The output enable input
OE directly controls the output stage. Setting the OE at a high
level, the output stage is in a high-impedance state, and the data
bus contention problem in the write cycle is eliminated.
A read cycle is executed by setting W at a high level and OE at a
low level while S1 and S2 are in an active state(S1=L,S2=H).
When setting S1 at a high level or S2 at a low level, the chip are
in a non-selectable mode in which both reading and writing are
disabled. In this mode, the output stage is in a high- impedance
state, allowing OR-tie with other chips and memory expansion by
S1 and S2. The power supply current is reduced as low as the
stand-by current which is specified as ICC3 or ICC4, and the
memory data can be held at +2V power supply, enabling battery
back-up operation during power failure or power-down operation in
the non-selected mode.
FUNCTION TABLE
S1
X
H
L
L
L
S2
L
X
H
H
H
Mode
DQ
OE
X Non selection High-impedance
X Non selection High-impedance
Din
X
Write
Dout
L
Read
High-impedance
H
W
X
X
L
H
H
ICC
Stand-by
Stand-by
Active
Active
Active
BLOCK DIAGRAM
*
*
21
13 DQ1
A5
7
15
22
14 DQ2
A6
6
14
23
15 DQ3
A7
5
13
25
17 DQ4
A12 4
12
26
18 DQ5
A14 3
11
27
19 DQ6
A16 2
10
28
20 DQ7
A15 31
7
29
21 DQ8
A13 28
4
A8 27
3
A0 12
20
A2 10
18
A3
17
A1 11
19
A11 25
1
A9 26
2
COLUMN
DECODER
31
CLOCK
GENERATOR
OUTPUT
BUFFER
BLOCK
DECODER
A10 23
ADDRESS INPUT
BUFFER
9
ADDRESS INPUT
BUFFER
ADDRESS
INPUTS
* Pin numbers inside dotted line show those of TSOP
2
DATA
INPUTS/
OUTPUTS
DATA INPUT
BUFFER
131072 WORDS
X 8 BITS
(1024 ROWS
X128 COLUMNS
X 8BLOCKS)
SENSE AMP.
16
ROW
DECODER
8
ADDRESS INPUT
BUFFER
A4
MITSUBISHI
ELECTRIC
5
WRITE
29 W CONTROL
INPUT
30
22 S1
6
30 S2
32
OUTPUT
24 OE ENABLE
INPUT
8
32 VCC
24
GND
16 (0V)
CHIP
SELECT
INPUTS
1997-1/21
MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL,
-70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Vcc
Supply voltage
VI
Input voltage
VO
Pd
Topr
Tstg
Output voltage
Power dissipation
Operating temperature
Storage temperature
Parameter
Ratings
– 0.3*~4.6
– 0.3*~Vcc + 0.3
(Max 4.6)
Conditions
With respect to GND
Unit
V
V
V
0~Vcc
700
Ta=25°C
0~70
– 65~150
mW
°C
°C
-12VL, -12VLL
-15VL, -15VLL
Unit
* –3.0V in case of AC ( Pulse width ≤ 30ns )
DC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, unless otherwise noted)
Limits
Symbol
Parameter
-70VL, -70VLL
-10VL, -10VLL
Test conditions
VCC=3.3±0.3V
Min
Typ
Max
Vcc
+0.3V
VCC=3.0±0.3V
Min
Typ
Max
Vcc
+0.3V
V
0.6
VIH
High-level input voltage
VIL
VOH1
Low-level input voltage
High-level output voltage 1
IOH= –0.5mA
VOH2
High-level output voltage 2
IOH= –0.05mA
VOL
II
Low-level output voltage
Input current
IOL=2mA
VI=0~Vcc
0.4
±1
0.4
±1
V
µA
IO
Output current in off-state
S1=VIH or S2=VIL or OE=VIH
VI/O=0~VCC
±1
±1
µA
ICC1
Active supply current
(Min cycle )
ICC2
Active supply current
(1MHz)
ICC3
ICC4
2.0
Stand-by current
2.4
2.4
V
V
Vcc
-0.5V
Vcc
-0.5V
V
–0.3
S1=VIL,S2=VIH,
other inputs=VIH or VIL
Output-open(duty 100%)
1) S2 ≤ 0.2V
2) S1 ≥ VCC–0.2V,
S2 ≥ VCC–0.2V
other inputs=0~VCC
0.6
–0.3
20
35
15
30
3
10
3
10
mA
-L
60
55
-LL
12
11
0.33
0.33
µA
S1=VIH or S2=VIL,
other inputs=0~VCC
Stand-by current
2.0
mA
* –3.0V in case of AC ( Pulse width ≤ 30ns )
CAPACITANCE (Ta=0~70°C, unless otherwise noted)
Symbol
CI
CO
Parameter
Input capacitance
Output capacitance
Test conditions
VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz
Note 1: Direction for current flowing into an IC is positive (no mark).
2: Typical value is Vcc = 3V, Ta = 25°C
3
MITSUBISHI
ELECTRIC
Min
Limits
Typ
Max
6
8
Unit
pF
pF
1997-1/21
MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL,
-70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
AC ELECTRICAL CHARACTERISTICS (Ta = 0~70°C, unless otherwise noted )
(1) MEASUREMENT CONDITIONS
1TTL
VCC ................................. 3.3±0.3V(-70VL,-70VLL,-10VL,-10VLL)
3.0±0.3V(-12VL,-12VLL,-15VL,-15VLL)
Input pulse level ............. VIH=2.2V,VIL=0.4V
Input rise and fall time ..... 5ns
Reference level ............... VOH=VOL=1.5V
Output loads ................... Fig.1,CL=100pF (-15VL,-15VLL,)
CL=30pF (-70VL,-10VL,12VL,-70VLL,-10VLL,12VLL)
CL=5pF (for ten,tdis)
Transition is measured ± 500mV from steady
state voltage. (for ten,tdis)
DQ
CL
including
scope and JIG
Fig.1 Output load
(2) READ CYCLE
Limits
Symbol
tCR
ta(A)
ta(S1)
ta(S2)
ta(OE)
tdis(S1)
tdis(S2)
tdis(OE)
ten(S1)
ten(S2)
ten(OE)
tV(A)
Parameter
Read cycle time
Address access time
Chip select 1 access time
Chip select 2 access time
Output enable access time
Output disable time after S1 high
Output disable time after S2 low
Output disable time after OE high
Output enable time after S1 low
Output enable time after S2 high
Output enable time after OE low
Data valid time after address
-70VL,VLL
Min
Max
70
70
-10VL,VLL
Min
Max
100
100
100
100
50
35
70
70
35
25
25
25
10
-12VL,VLL
Min
Max
120
120
120
120
60
40
35
35
10
150
150
75
50
50
50
40
40
10
10
10
5
10
10
5
-15VL,VLL
Min
Max
150
150
10
10
5
10
10
5
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
(3) WRITE CYCLE
Limits
Symbol
tCW
tw(W)
tsu(A)
tsu(A-WH)
tsu(S1)
tsu(S2)
tsu(D)
th(D)
trec(W)
tdis(W)
tdis(OE)
ten(W)
ten(OE)
4
Parameter
Write cycle time
Write pulse width
Address setup time
Address setup time with respect to W
Chip select 1 setup time
Chip select 2 setup time
Data setup time
Data hold time
Write recovery time
Output disable time from W low
Output disable time from OE high
Output enable time from W high
Output enable time from OE low
-70VL,VLL
Min
Max
70
55
0
65
65
65
30
0
0
-10VL,VLL
Min
Max
100
75
0
85
85
85
40
0
0
25
25
5
5
-12VL,VLL
Min
Max
120
85
0
100
100
100
45
0
0
35
35
5
5
MITSUBISHI
ELECTRIC
-15VL,VLL
Min
Max
150
100
0
120
120
120
50
0
0
40
40
5
5
50
50
5
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1997-1/21
MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL,
-70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
(4) TIMING DIAGRAMS
Read cycle
tCR
A0~16
ta(A)
tv (A)
ta (S1)
S1
(Note 3)
tdis (S1)
S2
(Note 3)
ta (S2)
(Note 3)
tdis (S2)
ta (OE)
(Note 3)
ten (OE)
OE
(Note 3)
tdis (OE)
(Note 3)
ten (S1)
ten (S2)
DQ1~8
DATA VALID
W = "H" level
Write cycle (W control mode)
tCW
A0~16
tsu (S1)
S1
(Note 3)
(Note 3)
S2
tsu (S2)
(Note 3)
(Note 3)
tsu (A-WH)
OE
tsu (A)
tw (W)
trec (W)
W
tdis (W)
ten(OE)
ten (W)
tdis (OE)
DQ1~8
DATA IN
STABLE
tsu (D)
5
th (D)
MITSUBISHI
ELECTRIC
1997-1/21
MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL,
-70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
Write cycle ( S1 control mode)
tCW
A0~16
tsu (A)
tsu (S1)
trec (W)
S1
S2
(Note 3)
(Note 3)
(Note 5)
W
(Note 4)
(Note 3)
(Note 3)
tsu (D)
th (D)
DATA IN
STABLE
DQ1~8
Write cycle (S2 control mode)
tCW
A0~16
S1
(Note 3)
(Note 3)
tsu (A)
tsu (S2)
trec (W)
S2
(Note 5)
W
(Note 4)
(Note 3)
(Note 3)
tsu (D)
DQ1~8
th (D)
DATA IN
STABLE
Note 3: Hatching indicates the state is "don't care".
4: Writing is executed while S2 high overlaps S1 and W low.
5: When the falling edge of W is simultaneously or prior to the falling edge of S1
or rising edge of S2, the outputs are maintained in the high impedance state.
6: Don't apply inverted phase signal externally when DQ pin is output mode.
6
MITSUBISHI
ELECTRIC
1997-1/21
MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL,
-70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
POWER DOWN CHARACTERISTICS
(1) ELECTRICAL CHARACTERISTICS (Ta = 0~70°C, unless otherwise noted)
Symbol
Parameter
VCC (PD)
VI (S1)
Power down supply voltage
Chip select input S1
VI (S2)
Chip select input S2
ICC (PD)
Test conditions
Min
2
2.0
Limits
Typ
Max
V
V
0.2
VCC = 3V
-L
1) S2 ≤ 0.2V, other inputs = 0~3V
2) S1 ≥ VCC - 0.2V,S2 ≥ VCC - 0.2V
-LL
other inputs = 0~3V
Power down supply current
Unit
V
50
µA
0.3
10
(Note 7)
Note7: ICC (PD) = 1µA in case of Ta = 25°C
(2) TIMING REQUIREMENTS (Ta = 0~70°C, unless otherwise noted )
Symbol
tsu (PD)
trec (PD)
Parameter
Test conditions
Power down set up time
Power down recovery time
Min
0
5
Limits
Typ
Max
Unit
ns
ms
(3) POWER DOWN CHARACTERISTICS
S1 control mode
VCC
t su (PD)
3.0V*
3.0V*
t rec (PD)
2.2V
2.2V
S1 ≥ VCC - 0.2V
S1
S2 control mode
VCC
S2
t su (PD)
3.0V*
3.0V*
t rec (PD)
0.2V
0.2V
S2 ≤ 0.2V
*Note 2.7V(-12VL,-12VLL,-15VL,-15VLL)
7
MITSUBISHI
ELECTRIC
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