UTC MPSA06 Npn transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MPSA06
NPN SILICON TRANSISTOR
NPN TRANSISTOR
„
FEATURES
* Collector-emitter voltage: VCEO=80V
* Collector dissipation: PD=625mW
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MPSA06L-T92-B
MPSA06G-T92-B
MPSA06L-T92-K
MPSA06G-T92-K
Package
TO-92
TO-92
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., LTD
Pin Assignment
1
2
3
E
B
C
E
B
C
Packing
Tape Box
Bulk
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MPSA06
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
4
V
Collector Current - Continuous
IC
500
mA
625
mW
Total device Dissipation, @TA=25°С
PD
5
mW/°С
Derate above 25°С
1500
mW
Total device Dissipation, @TC=25°С
PD
12
mW/°С
Derate above 25°С
Junction Temperature
TJ
+125
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θJA
θJC
Junction-to-Ambient
Junction-to-Case
„
MIN
TYP
MAX
200
83.3
UNIT
°С/W
ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(Note 1)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
Dc Current Gain
SYMBOL
TEST CONDITIONS
BVCEO
IC=1.0mA, IB=0
80
BVEBO
ICEO
ICBO
IE=100μA, Ic=0
VCE=60V, IB=0
VCB=80V, IE=0
4
hFE
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=100mA, IB=10mA
IC=100mA, VCE=1V
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter On Voltage
VBE(ON)
SMALL-SIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
fT
IC=10mA, VCE=2V, f=100MHz
(Note 2)
Note 1. Pulse test: PW<=300μs, Duty Cycle<=2%
2. fT is defined as the frequency at which IhfeI extrapolates to unity.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
UNIT
V
0.1
0.1
V
μA
μA
0.25
1.2
V
V
100
100
100
MHz
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TYPICAL CHARACTERISTICS
Current-Gain-Bandwidth Product, fT(MHz)
Capacitance
80
TJ=25°С
60
40
Cibo
20
10
8.0
Cobo
6.0
4.0
0.1
0.5 1.0
5.0 10
50 100
Reverse Voltage, VR (Volts)
Active-Region Safe Operating Area
1.0k
700
500
100µs
ms
1.0
300
TC=25°С 1.0s
200
100
70
50
TA=25°С
Current Limit
Thermal Limit
Second Breakdown
Limit
30
20
10
1.0 2.0
5.0 10
50 100
Collector-Emitter Voltage, VCE (Volts)
“On” Voltages
1.0
TJ=25°С
VBE(SAT) @ IC/IB=10
0.8
Voltage, V (Volts)
DC Current Gain, hFE
„
NPN SILICON TRANSISTOR
0.6
VBE(ON) @ VCE=1.0V
0.4
0.2
VCE(ON) @ IC/IB=10
0
0.5 1.0
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5.0 10
50 100
Collector Current, IC (mA)
500
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TYPICAL CHARACTERISTICS(Cont.)
Collector-Emitter Voltage, VCE (Volts)
Collector Saturation Region
1.0
Base-Emitter Temperature Coefficient
TJ=25°С
0.8
IC=50mA
IC=250mA
IC=100mA
IC=500mA
-0.8
-1.2
0.6
-1.6
0.4
-2.0
0.2
IC=10mA
0
0.5 1.0
50 100
5.0 10
Collector Current, IC (mA)
RθVB for VBE
-2.4
500
-2.8
0.5 1.0
5.0 10
50 100
Collector Current, IC (mA)
500
Normalzed Transient Thermal
Resistance, r(t)
„
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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