Diodes MMBT3904T-7-F 60v npn small signal transistor Datasheet

MMBT3904T
60V NPN SMALL SIGNAL TRANSISTOR IN SOT523
Features
Mechanical Data

BVCEO > 40V

IC = 200mA Collector Current

Epitaxial Planar Die Construction

Ultra-Small Surface Mount Package

Complementary PNP Type: MMBT3906T



Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability





Case: SOT523
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads
Solderable per MIL-STD-202, Method 208
Weight: 0.002 grams (Approximate)
C
SOT523
B
E
Top View
Pin-Out Top View
Device Symbol
Ordering Information (Note 4)
Product
Status
Compliance
Marking
MMBT3904T-7-F
Active
AEC-Q101
1N
7
8
3,000
MMBT3904T-13-F
Active
AEC-Q101
1N
13
8
10,000
Notes:
Reel Size (inches) Tape Width (mm)
Quantity per Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
1N
YM
K2N
Date Code Key
Year
2013
Code
A
Month
Code
2014
B
Jan
1
2015
C
Feb
2
MMBT3904T
Document number: DS30270 Rev. 10 - 2
Mar
3
2016
D
Apr
4
YM
Marking Information
2017
E
May
5
1N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M or M = Month (ex: 9 = September)
2018
F
Jun
6
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2019
G
Jul
7
2020
H
Aug
8
2021
I
Sep
9
Oct
O
2022
J
Nov
N
2023
K
Dec
D
April 2016
© Diodes Incorporated
MMBT3904T
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Value
60
40
6
200
Unit
V
V
V
mA
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
ESD Ratings (Note 6)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Notes:
Symbol
Value
Unit
JEDEC Class
ESD HBM
ESD MM
4,000
400
V
V
3A
C
5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
P d, POWER DISSIPATION (mW)
250
200
150
100
50
0
0
100
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
MMBT3904T
Document number: DS30270 Rev. 10 - 2
200
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MMBT3904T
Electrical Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 7)
Symbol
Min
Max
Unit
BVCBO
BVCEO
BVEBO
ICEX
IBL
60
40
6





50
50
V
V
V
nA
nA
hFE
40
70
100
60
30


300


Collector-Emitter Saturation Voltage
VCE(SAT)

Base-Emitter Saturation Voltage
VBE(SAT)
0.65

0.20
0.30
0.85
0.95
COBO
CIBO
hIE
hRE
hFE
hOE


1
0.5
100
1
4
8
10
8.0
400
40
pF
pF
kΩ
x 10-4

µS
Current Gain-Bandwidth Product
fT
300

MHz
Noise Figure
NF

5
dB
SWITCHING CHARACTERISTICS
Delay Time
tD

35
ns
Rise Time
tR

35
ns
VCC = 3V, IC = 10mA,
VBE(OFF) = -0.5V, IB1 = 1mA
Storage Time
Fall Time
tS
tF


200
50
ns
ns
VCC = 3.0V, IC = 10mA
IB1 =- IB2 = 1.0mA
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Note:

V
V
Test Condition
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCE = 30V, VEB(OFF) = 3V
VCE = 30V, VEB(OFF) = 3V
IC = 100µA, VCE = 1V
IC = 1mA, VCE = 1V
IC = 10mA, VCE = 1V
IC = 50mA, VCE = 1V
IC = 100mA, VCE = 1V
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
VCB = 5V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 10V, IC = 1mA,
f = 1.0MHz
VCE = 20V, IC = 10mA,
f = 100MHz
VCC = 5V, IC = 100A,
RS = 1kΩ, f = 1MHz
7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT3904T
Document number: DS30270 Rev. 10 - 2
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MMBT3904T
Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
10
15
1
COBO , OUTPUT CAPACITANCE (pF)
f = 1MHz
CIBO , INPUT CAPACITANCE (pF)
V BE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
IC
IB = 10
10
5
Cibo
Cobo
0.1
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
Typical Base-Emitter
Saturation Voltage vs. Collector Current
0
0.1
1,000
VC E(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
TA = 125°C
h FE, DC CURRENT GAIN
100
1
1,000
100
T A = -25°C
TA = +25°C
10
VCE = 1.0V
1
0.1
1
10
VCB, COLLECTOR-BASE VOLTAGE (V)
Input and Output Capacitance vs.
Collector-Base Voltage
Document number: DS30270 Rev. 10 - 2
0.1
0.01
0.1
1
1,000
10
100
IC , COLLECTOR CURRENT (mA)
Typical DC Current Gain vs. Collector Current
MMBT3904T
IC
I B = 10
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1
10
100
IC , COLLECTOR CURRENT (mA)
Typical Collector-Emitter
Saturation Voltage vs. Collector Current
1,000
April 2016
© Diodes Incorporated
MMBT3904T
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
SOT523
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
0.50


G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45
0.65
0.50
0°
8°


All Dimensions in mm
A
B C
G
H
K
M
N
J
L
D
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT523
Y
Z
Dimensions Value (in mm)
Z
1.8
X
0.4
Y
0.51
C
1.3
E
0.7
C
X
MMBT3904T
Document number: DS30270 Rev. 10 - 2
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MMBT3904T
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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Document number: DS30270 Rev. 10 - 2
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