Jiangsu BAS316 Switching diode Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-323 Plastic-Encapsulate Diodes
BAS316
SWITCHING DIODE
SOD-323
FEATURES


Very Small Plastic Package
High Switching Speed
APPLICATIONS

High-Speed Switching in e.g. Surface Mounted Circuits
MARKING: A6·
A6
The marking bar indicates the cathode
Solid dot = Green molding compound device,
if none,the normal device.
A6
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
Value
Unit
Peak Repetitive Reverse Voltage
85
VR
DC Blocking Voltage
75
IO
Continuous Forward Current
250
mA
Non-repetitive Peak Forward Surge Current@t= 8.3ms
2.0
A
Power Dissipation
250
mW
Thermal Resistance from Junction to Ambient
500
℃/W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
VRRM
IFSM
PD
RθJA
V
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage
Symbol
V(BR)
Reverse current
IR
Forward voltage
Total capacitance
Reverse recovery time
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VF
Ctot
trr
Test conditions
Max
Unit
V
VR=25V
30
nA
VR=75V
1
μA
IF=1mA
0.715
IF=10mA
0.855
IF=50mA
1
IF=150mA
1.25
VR=0V,f=1MHz
1.5
pF
4
ns
IR=100μA
IF= IR=10mA, Irr=0.1×IR
1
Min
100
Typ
V
D,Mar,2015
Typical Characteristics
Forward
Characteristics
Reverse
10000
250
Characteristics
(mA)
100
Ta=100℃
(nA)
1000
REVERSE CURRENT IR
T=
a 2
5℃
FORWARD CURRENT
IF
T=
a 1
00
℃
10
1
0.1
0.01
0.0
Ta=25℃
10
1
0.2
0.4
0.6
FORWARD VOLTAGE
0.8
VF
1.0
1.2
0
40
20
(V)
REVERSE VOLTAGE
Capacitance Characteristics
1.1
100
60
VR
80
(V)
Power Derating Curve
300
Ta=25℃
f=1MHz
(mW)
PD
1.0
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
250
0.9
200
150
100
50
0.8
0
0
5
10
REVERSE VOLTAGE
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15
VR
20
0
(V)
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
D,Mar,2015
SOD-323 Package Outline Dimensions
SOD-323 Suggested Pad Layout
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3
D,Mar,2015
SOD-323 Tape and Reel
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4
D,Mar,2015
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