MCC HDB103G

MCC
Features
•
•
•
•
High Forward Surge Capability
Ideal for printed circuit boards
High Temperature Soldering: 250oC for 10 seconds
Reliable low cost construction utilizing molded plastic technique
Maximum Ratings
•
•
•
HDB101G
THRU
HDB107G
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
1.0 AMP. Glass
Passivated Bridge
High Efficient Rectifier
50 to 1000 Volts
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
For Capacitive Load, Derate Current by 20%
MCC
Part Number
HDB101G
HDB102G
HDB103G
HDB104G
HDB105G
HDB106G
HDB107G
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
DB-1
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
Notch
~
B
+
C
~
A
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
HDB101G-103G
HDB104G
HDB105G-107G
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
HDB101G-104G
HDB105G-107G
IF(AV)
IFSM
VF
IR
Trr
1.0 A
50A
TC = 40°C
G
8.3ms, half sine
TJ=150oC
1.0V
1.3V
1.7V
IFM = 1.0A;
TC = 25°C
5.0µA
500uA
TC = 25°C
TC = 125°C
50ns
75ns
D
F
DIMENSIONS
INCHES
DIM
A
B
C
D
E
F
G
MIN
.320
.245
.300
.236
.120
.016
.195
MAX
.335
.255
.350
.283
.130
.022
.205
MM
MIN
8.13
6.2
7.60
6.01
3.05
0.41
5.00
MAX
8.51
6.5
8.90
7.20
3.3
0.56
5.20
NOTE
IF=0.5A, IR=1.0A,
Irr=0.25A
www.mccsemi.com
Version: 3
2003/01/30
MCC
HDB101G thru HDB107G
FIG.2- MAXIMUM FORWARD
CURRENT DERATING CURVE
FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10W
NONINDUCTIVE
50W
NONINDUCTIVE
trr
1.0
+0.5A
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
0
-0.25A
(+)
1cm
FIG.3- TYPICAL REVERSE CHARACTERISTICS
40
60
80
100
120
140
150
o
AMBIENT TEMPERATURE. ( C)
FIG.4- TYPICAL FORWARD CHARACTERISTICS
1.0
Tj=25 0C
0
20
40
60
80
100
.4
25
20
15
10
5
10
20
NUMBER OF CYCLES AT 60Hz
7G
10
DB
B1
0
6G
~H
G
05
HD
B1
1.0
1.2
1.4
70
JUNCTION CAPACITANCE.(pF)
8.3ms Single Half Sine Wave
JEDEC Method
2
B10
HD
1G~
.2
FIG.6- TYPICAL JUNCTION CAPACITANCE
35
1
.8
0.01
FORWARD VOLTAGE. (V)
FIG.5- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
30
.6
0.1
0.001
120
HD
10
B10
Tj=125 0C
Tj=25 0C
1.0
HD
100
4G
10
INSTANTANEOUS FORWARD CURRENT. (A)
INSTANTANEOUS REVERSE CURRENT. ( A)
60Hz RESISTIVE OR
INDUCTIVE LOAD
20
SET TIME BASE FOR
5/ 10ns/ cm
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
PEAK FORWARD SURGE CURRENT. (A)
Copper Pauls
.51" x .51"
(13mm x 13mm)
0.5
0
1000
0
PCB
-1.0A
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
0.1
.06" (1.5mm)
AVERAGE FORWARD CURRENT. (A)
(+)
50Vdc
(approx)
(-)
(-)
DUT
50
100
60
50
40
HD
B10
1G~
HD
B10
HDB
5G
106
G~H
DB1
07G
30
20
Tj=25 0C
10
0
.1
.5
1
2
5
10
20
50
100 200
500
REVERSE VOLTAGE. (V)
www.mccsemi.com
Version: 3
2003/01/30