NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 SILICON PLANAR DARLINGTON TRANSISTORS The BDX42, BDX43 and BDX44 are silicon NPN planar Darlington transistors and are mounted in Jedec TO-126 plastic package. They are intented for use in industrial switching applications. The complementary PNP types are the BDX45, BDX46 and BDX47 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCER Collector-EmitterVoltage VEBO Emitter-Base Voltage Value IC IC Collector Current ICM IB Base Current PT Power Dissipation TJ Junction Temperature TS Storage Temperature COMSET SEMICONDUCTORS 60 80 90 45 60 80 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 @ TC = 25° 5 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 Unit V V V 1 A 2 0.1 A 1.25 Watts 150 °C -65 to +150 1/3 NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 THERMAL CHARACTERISTICS Symbol RthJ-a RthJ-mb Ratings Value BDX42 Thermal Resistance, Junction to Ambient BDX43 BDX44 BDX42 Thermal Resistance, Junction to BDX43 Mounting base BDX44 Unit 100 K/W 10 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings ICES Collector cut-off current VBE = 0 ; VCE = 45V VBE = 0 ; VCE = 60V VBE = 0 ; VCE = 80V IEBO Emitter cut-off current IC =0 ; VEB = 4V IC=500 m A, IB=0.5 mA IC=1.0 A, IB=1.0 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=1.0 A, IB=4.0 mA IC=500 m A, IB=0.5 mA Tj=150 °C IC=1.0 A, IB=1.0 mA Tj=150 °C IC=1.0 A, IB=4.0 mA Tj=150 °C IC=500 m A, IB=0.5 mA VBE(SAT) Base-Emitter saturation Voltage (*) IC=1.0 A, IB=1.0 mA IC=1.0 A, IB=4.0 mA VCE=10 V, IC=150 mA hFE Min Typ Mx Unit Test Condition(s) DC Current Gain VCE=10 V, IC=500 mA COMSET SEMICONDUCTORS BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 - BDX42 BDX43 BDX44 BDX43 BDX42 BDX44 BDX42 BDX43 BDX44 - - 1.3 1.3 1.3 1.6 1.6 1.6 1.3 1.3 1.3 BDX43 - - 1.8 BDX42 BDX44 BDX42 BDX43 BDX44 BDX43 BDX42 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 - - 1.6 1.6 1.9 1.9 1.9 2.2 2.2 2.2 - 2/3 1000 1000 1000 2000 2000 2000 - 10 10 10 10 10 10 µA µA V V - NPN BDX42 – BDX43– BDX44 PNP BDX45 – BDX46 – BDX47 Symbol Test Condition(s) Ratings hfe Small Signal Current Gain ton Turn-on time VCE=5.0 V, IC=500 mA , f=35MHz IC=500 mA, IBon= -IBoff=0.5 mA toff Turn-off time ton Turn-on time IC=1 A, IBon= -IBoff=1.0 mA toff Turn-off time Min Typ BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 BDX42 BDX43 BDX44 MECHANICAL DATA CASE TO-126 DIMENSIONS mm min A B C D E F G H L M N P Pin 1 : Pin 2 : Case : inches max 7.4 7.8 10.5 10.8 2.4 2.7 0.7 0.9 2.2 typ. 0.49 0.75 4.4 typ. 2.54 typ. 15.7 typ. 1.2 typ. 3.8 typ. 3.0 3.2 min max 0.295 0.307 0.413 0.425 0.094 0.106 0.027 0.035 0.087 typ. 0.019 0.029 0.173 typ. 0.100 typ. 0.618 typ. 0.047 typ. 0.149 typ. 0.118 0.126 Emitter Collector Base COMSET SEMICONDUCTORS 3/3 - - 10 10 10 400 400 400 1500 1500 1500 400 400 400 1500 1500 1500 Mx Unit - - ns ns