SEMICONDUCTOR BSS63 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L L V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -6 V Collector Current IC -100 mA Emitter Current IE 100 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ᴱ Tstg -65ᴕ150 ᴱ Storage Temperature Range 1 P P J -110 3 MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K VCBO H Collector-Base Voltage 2 N UNIT C RATING A SYMBOL G CHARACTERISTIC D MAXIMUM RATING (Ta=25ᴱ) DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking Lot No. T6 Type Name ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -100 - - V Collector-Base Breakdown Voltage V(BR)CBO IC=-10Ọ A, IE=0 -110 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10Ọ A, IC=0 -6 - - V VCB=-90V, IE=0 - - -100 nA VCB=-90V, IE=0, Ta=150ᴱ - - -50 Ọ A VEB=-5V, IC=0 - - -200 nA VCE=-1V, IC=-10mA 30 - - VCE=-1V, IC=-25mA 30 - - IC=-25mA, IB=-2.5mA - - -0.9 IC=-25mA, IB=-2.5mA - - -0.25 IC=-75mA, IB=-7.5mA - - -0.9 50 - - MHz - 3 - pF Collector Cut-off Current ICBO Emitter Cut-off Current IEBO DC Current Gain hFE Base-Emitter Saturation Voltage VBE(sat) Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency Collector Output Capacitance 1998. 6. 15 Revision No : 1 Cob IC=-25mA, VCE=-5V, f=100MHz VCB=-10V, IE=0, f=1MHz V V 1/1