LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G S-L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring 2 CASE 318, STYLE 21 SOT– 23 (TO–236AB) Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Drain Current – Continuous TC = 25°C (Note 1.) – Continuous TC = 100°C (Note 1.) – Pulsed (Note 2.) ID ID mAdc IDM ±115 ±75 ±800 VGS VGSM ±20 ±40 Vdc Vpk Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Gate Symbol Max Unit PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 556 °C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25°C Derate above 25°C PD 300 mW mW/°C Thermal Resistance, Junction to Ambient RθJA 417 °C/W TJ, Tstg -55 to +150 °C Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Junction and Storage Temperature 2.4 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. ORDERING INFORMATION Device Marking Shipping L2N7002LT1G S-L2N7002LT1G 702 3000 Tape & Reel L2N7002LT3G S-L2N7002LT3G 702 10000 Tape & Reel 1 3 Source THERMAL CHARACTERISTICS Characteristic Simplified Schematic Drain 2 (Top View) MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 702 1 Gate 702 W W Rating 2 Source = Device Code =Month Code Rev .O 1/4 LESHAN RADIO COMPANY, LTD. L2N7002LT1G , S-L2N7002LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 60 – – Vdc IDSS – – – – 1.0 500 µAdc Gate–Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF – – 1 µAdc Gate–Body Leakage Current, Reverse (VGS = – 20 Vdc) IGSSR – – -1 µAdc VGS(th) 1.0 1.6 2 Vdc ID(on) 500 – – mA – – – – 3.75 0.375 – – – – 1.4 – 1.8 – 7.5 13.5 7.5 13.5 gFS 80 – – mmhos Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – 17 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – 10 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – 2.5 5.0 pF td(on) – 7 20 ns td(off) – 11 40 ns VSD – – –1.5 Vdc IS – – –115 mAdc ISM – – –800 mAdc OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) VDS(on) Static Drain–Source On–State Resistance TC = 25°C (VGS = 10 V, ID = 500 mAdc) TC = 125°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C TC = 125°C rDS(on) Forward Transconductance (VDS ≥ 2.0 VDS(on), ID = 200 mAdc) Vdc Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time (V DD = 25 Vdc , ID ^ 500 mAdc, RG = 25 Ω, RL = 50 Ω, Vgen = 10 V) BODY–DRAIN DIODE RATINGS Diode Forward On–Voltage (IS = 115 mAdc, V GS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%. Rev .O 2/4 LESHAN RADIO COMPANY, LTD. L2N7002LT1G , S-L2N7002LT1G TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.0 VDS = 10 V TA = 25°C 1.6 1.4 9V 1.2 8V 1.0 7V 0.8 6V 0.6 0.4 5V 0.2 4V 3V 0 0.8 VGS = 10 V ID, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (AMPS) 1.8 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9.0 125°C 0.6 0.4 0.2 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 2.4 2.2 1.8 VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -o60 -o20 +o20 +o60 T, TEMPERATURE (°C) 9.0 10 Figure 2. Transfer Characteristics VGS(th), THRESHOLD VOLTAGE (NORMALIZED) r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) Figure 1. Ohmic Region 2.0 25°C -o55°C +o100 Figure 3. Temperature versus Static Drain–Source On–Resistance 1.2 1.05 VDS = VGS ID = 1.0 mA 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 +o140 -o60 -o20 +o20 T, TEMPERATURE (°C) +o60 +o100 Figure 4. Temperature versus Gate Threshold Voltage Rev .O 3/4 +o140 LESHAN RADIO COMPANY, LTD. L2N7002LT1G , S-L2N7002LT1G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S G C D H K J MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 A B C D G H J K L S V INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev .O 4/4