ST5771-1 C TO-92 BE PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 100mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units V VCEO Collector-Emitter Voltage 15 VCBO Collector-Base Voltage 15 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units ST5771-1 350 2.8 125 mW mW/°C °C/W 357 °C/W ST5771-1 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* I C = 3.0 mA, I B = 0 15 V V(BR)CBO Collector-Base Breakdown Voltage I C = 100 µA, I E = 0 15 V V(BR)EBO Emitter-Base Breakdown Voltage I E = 100 µA, IC = 0 4.5 V V(BR)CES Collector-Emitter Breakdown Voltage I C = 100 µA 15 V ICBO Collector Cutoff Current VCB = 8.0 V, IE = 0 10 nA ICES Collector Cutoff Current IEBO Emitter Cutoff Current VCE = 8.0 V, IE = 0 VCE = 8.0 V, IE = 0, TA = 125 0C VEB = 4.5 V, IC = 0 10 5.0 1.0 nA µA µA ON CHARACTERISTICS* hFE DC Current Gain VCE( sat) Collector-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage IC = 10 mA, VCE = 0.3 V IC = 10 mA, VCE = 0.3 V, TA = - 55 °C IC = 1.0 mA, VCE = 0.5 V IC = 50 mA, VCE = 1.0 V IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 1.0 mA, IB = 0.1 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 30 150 15 30 20 0.8 0.15 0.18 0.6 0.8 0.95 1.5 V V V V V V SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance VCB = 5.0 V, f = 1.0 MHz 3.0 pF Ceb Emitter-Base Capacitance VEB = 0.5 V, f = 1.0 MHz 3.5 pF hfe Small-Signal Current Gain IC = 10 mA, VCE = 10 V, f = 100 MHz 7.0 SWITCHING CHARACTERISTICS 20 ns Turn-on Time VCC = 3.0 V I C = IB1 = IB2 = 1.0 mA VCC = 1.5 V, IC = 10 mA, 15 ns Delay Time I B1 = 1.0 mA 10 ns ts Storage Time ton td tr Rise Time toff Turn-off Time ts Storage Time tf Fall Time *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 15 ns VCC = 1.5 V, IC = 10 mA 20 ns I B1 = IB2 = 1.0 mA 20 ns 10 ns ST5771-1 PNP Switching Transistor