SEMICONDUCTOR GM100HB12BTA TECHNICAL DATA 1200V/100A 2-PACK IGBT MODULE (Half - Bridge) FEATURES ·Field Stop Trench Technology ·Low VCE(sat) ·Low Turn-off loss ·Short tail current ·Positive temperature coefficient ·10us Short Circuit Capability ·UL Recognized. File No. E305401 APPLICATION ·Motor Controls OUTLINE DRAWING ·General purpose inverters ·Servo Controls _ 0.3 13 + Unit : mm _ 0.3 13 + _ 0.3 13 + 2 _ 0.3 23 + 3 _ 0.5 35 + _ 0.5 28 + 5 4 _ 0.3 23 + _ 0.5 80 + _ 0.5 93 + 5 4 4. G1 5. E1 6. G2 7. E2 _ 0.5 31 + _ 0.5 30 + _ 0.5 30 + _ 0.3 17 + _ 0.5 22 + 1. C2 /E1 2. E2 3. C1 3 _ 0.5 6+ 1 2 _ 0.3 25 + 6 7 6 7 1 _ 0.3 17 + _ 0.3 14 + INTERNAL CIRCUIT MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-to-Emitter Voltage VCES 1200 V Gate-Emitter Voltage VGES ±20 V Continuous Collector Current DC IC 100 A Pulsed Collector Current 1ms ICP 200 A PD 416 W Viso 2500 V Junction Temperature Tj -40 ~ +150 ℃ Storage Temperature Tstg -40 ~ +125 ℃ Weight 190±5 g Mounting Torque (M6) M 5 N.m Terminal Connection torque (M5) M 4 N.m Power Dissipation Isolation Voltage test AC @ 1 minute Weight 2018. 01. 09 Revision No : 1 1/8 GM100HB12BTA ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Emitter Breakdown Voltage BVCES TEST CONDITION MIN. TYP. MAX. UNIT 1200 - - V Static VGE=0V , IC=1mA Collector Cut-off Current ICES VGE=0V, VCE=1200V - - 1.0 mA Gate Leakage Current IGES VCE=0V, VGE=±20V - - ±100 nA VGE=VCE, IC=1mA - 5.8 - V VGE=15V, IC=100A - 2.1 2.5 V VGE=15V, IC=100A, TC = 125℃ - 2.2 - V VGE=15V, IC=200A - 2.7 - V - 664 - nC - 123 - nC VGE(th) Gate Threshold Voltage Collector-Emitter Saturation Voltage VCE(sat) Dynamic Total Gate Charge Qg Gate-Emitter Charge Qge Gate-Collector Charge Qgc - 351 - nC Turn-On Delay Time td(on) - 331 - ns tr - 163 - ns - 581 - ns - 155 - ns - 13.3 - mJ - mJ Rise Time VCE=600V, VGE=±15V, IC= 100A td(off) Turn-Off Delay Time tf Fall Time VCE=600V, IC=100A, VGE=±15V,RG=10Ω Inductive Load, TC = 25℃ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 10.4 Total Switching Loss Ets - 23.7 Turn-On Delay Time td(on) - 330 - ns tr - 169 - ns - 624 - ns - 152 - ns - 13.8 - mJ Rise Time td(off) Turn-Off Delay Time tf Fall Time VCE=600V, IC=100A, VGE=±15V, RG=10Ω Inductive Load, TC = 125℃ - mJ Turn-On Switching Loss Eon Turn-Off Switching Loss Eoff - 11.3 - mJ Total Switching Loss Ets - 25.1 - mJ Input Capacitance Cies - 15148 - pF Ouput Capacitance Coes - 616 - pF Reverse Transfer Capacitance Cres - 179 - pF Short Circuit Current ISC - 540 - A VCE=30V, VGE=0V, f=1MHz VCC=600V, VGE=±15V, tpsc≤10us THERMAL CHARACTERISTIC CHARACTERISTIC SYMBOL Max Junction to Case (IGBT Part, Per 1/2 Module) Rth(j-c) 0.3 Junction to Case (Diode Part, Per 1/2 Module) Rth(j-c) 0.49 2018. 01. 09 Revision No : 1 UNIT ℃/W 2/8 GM100HB12BTA ELECTRICAL CHARACTERISTIC OF DIODE CHARACTERISTIC SYMBOL VF Diode Forward Voltage MIN. TYP. MAX. TC=25℃ - 2.2 2.6 TC=125℃ - 2.3 - TC=25℃ - 174 209 TC=125℃ - 218 - IF=100A, TC=25℃ - 59 71 RG=10Ω TC=125℃ - 74 - TC=25℃ - 5.77 6.92 TC=125℃ - 9.2 - IF = 100A trr Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge 2018. 01. 09 TEST CONDITION Irr Qrr Revision No : 1 UNIT V ns A nC 3/8 GM100HB12BTA Fig 1. Saturation Voltage Characteristics Fig 2. Saturation Voltage Characteristics 200 Common Emitter TC=25 C 180 18V 160 14V 140 120 12V VGE = 20V 100 Common Emitter VGE = 15V TC = 25 C TC = 125 C 180 15V 10V 80 60 40 Collector Current IC (A) Collector Current IC (A) 200 140 120 100 80 60 40 20 8V 20 160 0 0 Collector - Emitter Voltage VCE (V) 2 3 4 Fig 3. Saturation Voltage vs. Case Temperature Fig 4. Saturation Voltage vs. VGE 5.0 Collector - Emitter Voltage VCE (V) Collector - Emitter Voltage VCE (V) Common Emitter VGE = 15V 4.0 IC = 100A 3.0 2.0 IC = 200A 1.0 0.0 25 50 75 100 20 Common Emitter TC =25 C 16 IC = 100A IC = 50A 12 IC = 200A 8 4 0 0 125 4 8 12 16 Case Temperature TC ( C ) Gate - Emitter Voltage VGE (V) Fig 5. Saturation Voltage vs. VGE Fig 6. Capacitance Characteristics 20 100000 Common Emitter TC =125 C 16 IC = 100A 12 IC = 200A 8 20 Common Emitter VGE = 0V, f = 1MHZ TC = 25 C Cies IC = 50A Coes 10000 Cres 1000 4 100 0 0 4 8 12 16 Gate - Emitter Voltage VGE (V) 2018. 01. 09 1 Collector - Emitter Voltage VCE (V) Capacitance (pF) Collector - Emitter Voltage VCE (V) 0 Revision No : 1 20 1 10 100 Collector - Emitter Voltage VCE (V) 4/8 GM100HB12BTA Fig 7. Turn-On Characteristics vs. Gate Resistance Fig 8. Turn-Off Characteristics vs. Gate Resistance 10000 td(on) 1000 tr 100 Common Emitter VCC = 600V, VGE = 15V IC = 100A TC = 25 C TC = 125 C 10 0 10 20 30 40 50 60 70 80 Switching Time (ns) Switching Time (ns) 10000 1000 td(off) tf 100 Common Emitter VCC = 600V, VGE = 15V IC = 100A TC = 25 C TC = 125 C 10 90 100 110 0 10 20 30 40 50 60 70 80 Gate Resistance RG (Ω) Gate Resistance RG (Ω) Fig 9. Switching Loss vs. Gate Resistance Fig 10. Turn-On Characteristics vs. Collector Current 1000 100 td(on) Eoff 10 Common Emitter VCC = 600V, VGE = 15V IC = 100A TC = 25 C TC = 125 C 1 Switching Time (ns) Switching Loss (mJ) Eon tr 100 10 Common Emitter VCC = 600V, VGE = 15V RG = 10Ω TC = 25 C TC = 125 C 1 0 10 20 30 40 50 60 70 80 90 100 110 0 30 60 90 120 150 180 210 Gate Resistance RG (Ω) Collector Current IC (Α) Fig 11. Turn-Off Characteristics vs. Collector Current Fig 12. Turn-Off Characteristics vs. Collector Current 10000 100 td(off) 1000 tf 100 Common Emitter VCC = 300V, VGE = 15V RG = 10Ω TC = 25 C TC = 125 C 10 1 Eon 10 Eoff 1 Common Emitter VCC = 600V, VGE = 15V RG = 10Ω TC = 25 C TC = 125 C 0.1 0 30 60 90 120 150 Collector Current IC (Α) 2018. 01. 09 Switching Time (ns) Switching Time (ns) 90 100 110 Revision No : 1 180 210 0 30 60 90 120 150 180 210 Collector Current IC (Α) 5/8 GM100HB12BTA Fig 14. Reverse Bias Safe Operating Area (Max) 800 15 600 10 400 VGE 5 200 0 VCE 0 -5 -200 -10 Common Emitter -400 IC = 100Α TC = 25 C -15 -200 -100 0 100 200 300 400 500 600 -600 700 250 Collector Current IC (A) 20 Collector - Emitter Voltage VCE (V) Gate-Emitter Voitage VGE (V) Fig 13. Gate Charge Characteristics VGE = 15V TC = 25 C, RG = 10 Ω 200 150 100 50 0 0 200 400 600 800 1000 1200 1400 Collector - Emitter Voltage VCE (V) Gate Charge Qg (nC) Fig15. Transient Thermal Response Curve Thermal Resistance (Zthjc) 101 100 10-1 IGBT : DIODE : 10-2 10-5 10-4 10-3 10-2 10-1 100 101 102 Rectangular Pulse Duration (sec) 2018. 01. 09 Revision No : 1 6/8 GM100HB12BTA Fig 17. Reverse Recovery Current Reverse Recovery Current IRRM (A) Fig 16. Forward Characteristics Forward Current IF (A) 1000 TC = 25 C 100 TC = 125 C 10 1 0 1 2 3 4 Forward Voltage VF (V) 90 80 70 60 50 40 30 Common Emitter VCC = 600V, VGE = 15V RG = 10 Ω TC = 25 C TC = 125 C 20 10 0 0 30 60 90 120 150 180 210 Forward Current IF (A) Fig 18. Reverse Recovery Current Reverse Recovery Time trr (ns) 300 250 200 150 100 Common Emitter VCC = 600V, VGE = 15V RG = 10 Ω TC = 25 C TC = 125 C 50 0 0 30 60 90 120 150 180 210 Forward Current IF (A) 2018. 01. 09 Revision No : 1 7/8 GM100HB12BTA Fig 19. Switching Test Circuit Diode Clamp /DUT C L G E _ + -10V Measurement Pulse + _ 600V C DUT/ DRIVER Rg G E VGE = 15V Fig 20. Definition Switching Time & Loss GATE VOLTAGE DUT 10% + Vg Vce OUT VOLTAGE AND CURRENT Vce Vcc 90% Vge + Vge + Vg 10% Ic Ic 90% Ic Ipk Ic Ic td(off) tf t2 Eoff = Vce Ic dt t1 ઠ t2 Eon = Vce Ic dt t1 tr td (on) 90% Ic 10% Ic ઠ t1 t2 t1 t2 Fig 21. Definition Diode Switching Time trr Ic tx trr Ic dt tx ઠ Qrr = 10% Irr Vcc Vpk DIODE REVERSE WAVEFORMS 2018. 01. 09 Revision No :1 8/8