TAITRON MMBT2222A Smd general purpose transistor (npn) Datasheet

SMD General Purpose
Transistor (NPN)
MMBT2222A
SMD General Purpose Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistor for
Switching and Amplifier Applications
• RoHS compliance
SOT-23
Mechanical Data
Case:
SOT-23, Plastic Package
Terminals:
Weight:
Solderable per MIL-STD-202G, Method 208
0.008 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MMBT2222A
Unit
Marking Code
1P
VCBO
Collector-Base Voltage
75
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6.0
V
Collector Current
0.6
A
350
mW
2.8
mW/° C
Thermal Resistance, Junction to Ambient
357
° C /W
Junction Temperature
150
°C
-55 to +150
°C
IC
Ptot
RθJA
TJ
TSTG
Power Dissipation above 25°C (note 1)
Storage Temperature Range
Note: (1) Device mounted on FR-4 PCB 1.6’’ x 1.6’’ x 0.06’’
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON
Fax: (800)-TAITFA
(800)-824-8766
(800)-824-8329
(661)-257-6060
(661)-257-6415
Rev. A/AH 2007-11-13
Page 1 of 3
SMD General Purpose Transistor (NPN)
MMBT2222A
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
hFE
Description
D.C. Current Gain
Min.
Max.
Unit
Conditions
35
-
VCE=10V, IC=0.1mA
50
-
VCE=10V, IC=1mA
75
-
35
-
100
300
VCE=10V, IC=10mA
VCE=10V, IC=10mA
Ta=-55° C
VCE=10V, IC=150mA*
40
-
VCE=10V, IC=500mA*
50
-
VCE=1.0V, IC=150mA*
V(BR)CBO
Collector-Base Breakdown Voltage
75
-
V
IC=10µA, IE=0
V(BR)CEO
Collector-Emitter Breakdown Voltage*
40
-
V
IC=10mA, IB=0
V(BR)EBO
Emitter-Base Breakdown Voltage
6.0
-
V
IE=10µA, IC=0
-
0.3
-
1.0
0.6
1.2
-
2.0
10
nA
VEB=3V, VCE=60V
10
nA
10
µA
VCB=60V, IE=0
VCB=60V, IE=0,
Ta=125° C
VEB=3V, VCE=60V
VCEsat
Collector-Emitter Saturation Voltage*
VBEsat
Base-Emitter Saturation Voltage*
V
V
ICEX
Collector Cut-off Current
-
ICBO
Collector Cut-off Current
-
Base Cut-off Current
-
20
nA
Emitter Cut-off Current
-
10
nA
300
-
MHz
IBL
IEBO
fT
Current Gain-Bandwidth Product
Cobo
Output Capacitance
-
8.0
pF
Cibo
Input Capacitance
-
25
pF
Noise Figure
-
4.0
dB
Collector Base Time Constant
-
150
ps
td
Delay Time
-
10
tr
Rise Time
-
25
ts
Storage Time
-
225
tf
Fall Time
-
60
NF
rb’Cc
ns
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VEB=3V, IC=0
VCE=20V, IC=20mA,
f=100MHz
VCB=10V, f=1.0MHz,
IE=0
VEB=0.5V, f=1.0MHz,
IC=0
VCE=10V, IC=100µA,
Rs=1kΩ, f=1kHz
VCB=20V, IC=20mA,
f=31.8 MHz
IB1=15mA
IC=150mA
VCC=30V
VEB=0.5V
IB1=IB2=15mA
IC=150mA
VCC=30V
*Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0%
Rev. A/AH 2007-11-13
www.taitroncomponents.com
Page 2 of 3
SMD General Purpose Transistor (NPN)
MMBT2222A
Dimensions in mm
SOT-23
How to contact us:
US HEADQUARTERS
28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162
Tel: (800) TAITRON (800) 824-8766 (661) 257-6060
Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415
Email: [email protected]
Http://www.taitroncomponents.com
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Fax: +86-21-5424-9931
Rev. A/AH 2007-11-13
www.taitroncomponents.com
Page 3 of 3
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