MOTOROLA MRF21180R6 Rf power field effect transistor Datasheet

MOTOROLA
Freescale Semiconductor, Inc.
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by MRF21180/D
SEMICONDUCTOR TECHNICAL DATA
The RF Sub - Micron MOSFET Line
RF Power Field Effect Transistor
MRF21180R6
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
• Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts,
IDQ = 2 x 850 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 - 5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 - 10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF.
Output Power — 38 Watts (Avg.)
Power Gain — 12.1 dB
Efficiency — 22%
IM3 — 37.5 dBc
ACPR — - 41 dBc
• Internally Input and Output Matched, for Ease of Use
• High Gain, High Efficiency, and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2110 MHz, 170 Watts (CW)
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
2170 MHz, 170 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 04, STYLE 1
NI - 1230
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain- Source Voltage
VDSS
65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
380
2.17
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
0.46
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Class
1 (Minimum)
Machine Model
M3 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
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MRF21180R6
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
3
3.9
5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.18
0.22
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
6
—
S
Crss
—
3.6
—
pF
Characteristic
OFF CHARACTERISTICS (1)
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 µAdc)
Freescale Semiconductor, Inc...
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2)
2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. Each carrier has Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Gps
11
12.1
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
η
19
22
—
%
IM3
—
- 37.5
- 35
dBc
ACPR
—
- 41
- 39
dBc
IRL
—
- 12
-9
dB
Third Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW @ f1 - 10 MHz
and f2 +10 MHz)
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz; ACPR measured over 3.84 MHz BW @ f1 - 5 MHz
and f2 +5 MHz.)
Input Return Loss
(VDD = 28 Vdc, Pout = 38 W Avg., IDQ = 2 x 850 mA,
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz,
f2 = 2167.5 MHz)
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 170 W CW, IDQ = 2 x 850 mA, f = 2170 MHz
VSWR = 5:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Each side of device measured separately. Part is internally matched both on input and output.
(2) Measurements made with device in push - pull configuration.
(continued)
MRF21180R6
2
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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Freescale Semiconductor, Inc...
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued)
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
Gps
—
12
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
η
—
33
—
%
Two - Tone Intermodulation Distortion
(VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IMD
—
- 30
—
dBc
Two - Tone Input Return Loss
(VDD = 28 Vdc, Pout = 170 W, IDQ = 2 x 850 mA,
f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
IRL
—
- 12
—
dB
P1dB
—
180
—
W
Pout, 1 dB Compression Point
(VDD = 28 Vdc, IDQ = 2 x 850 mA, f = 2170 MHz)
(2) Measurements made with device in push - pull configuration.
MOTOROLA RF DEVICE DATA
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MRF21180R6
3
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VGG
VDD
R3
+
R1
B1
C8
C9
C14
C18
+
+
C19
C21
Z13
+
C23
C15
C11
C5
Z9
RF
INPUT
Z3
C1
Z5
C4
Z17
RF
OUTPUT
DUT
Z2
Z19
Z4
C2
VGG
Freescale Semiconductor, Inc...
Z15
Z7
R5
Z1
Z11
Z6
Z10
R4
R2
Z20
Z8
B2
Z12
Z16
C3
Z18
Z14
+
C24
C16
C12
VDD
C6
+
C7
C10
C13
C17
+
+
C20
C22
Figure 1. MRF21180 Test Circuit Schematic
Table 1. MRF21180 Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1, B2
Short Ferrite Beads
2743019447
Fair Rite
C1, C2, C3, C4
30 pF Chip Capacitors
100B300JCA500X
ATC
C5, C6, C7, C8
5.6 pF Chip Capacitors
100B5R6JCA500X
ATC
C9, C10
10 µF Tantalum Capacitors
T495X106K035AS4394
Kemet
C11, C12, C13, C14
1000 pF Chip Capacitors
100B102JCA500X
ATC
C15, C16, C17, C18
0.1 µF Chip Capacitors
CDR33BX104AKWS
Kemet
C19, C20
1.0 µF Tantalum Capacitors
T491C105M050
Kemet
C21, C22, C23, C24
22 µF Tantalum Capacitors
T491X226K035AS4394
Kemet
N1, N2
Type N Flange Mounts
3052-1648-10
Omni Spectra
R1, R2, R3, R4
10 Ω, 1/8 W Chip Resistors
R5
1.0 kΩ, 1/8 W Chip Resistor
Z1, Z20
Microstrip
0.790″ x 0.065″
Z2, Z19
Microstrip
0.830″ x 0.112″
Z3, Z18
Microstrip
0.145″ x 0.065″
Z4, Z17
Microstrip
1.700″ x 0.065″
Z5, Z6
Microstrip
0.340″ x 0.065″
Z7, Z8
Microstrip
0.455″ x 0.600″
Z9, Z10
Microstrip
0.980″ x 0.035″
Z11, Z12
Microstrip
0.510″ x 0.645″
Z13, Z14
Microstrip
0.770″ x 0.058″
Z15, Z16
Microstrip
0.280″ x 0.065″
WB1, WB2, WB3, WB4
Wear Blocks
Board
0.030″ Glass Teflon
RF-35, εr = 3.50
Taconic
PCB
Etched Circuit Boards
MRF21180 Rev. 4
CMR
MRF21180R6
4
MOTOROLA RF DEVICE DATA
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C19
C21
C14
C15C11
R4
B1
C18
R3
C5
C8 C10
C22
C1
C2
WB4
R5
C3
WB1
Freescale Semiconductor, Inc...
C4
WB3
WB2
C23
C6
B1
R1
C20
C7 C9
R2
C17
C16 C12
C13
MRF21180
Rev. 4
C24
Figure 2. MRF21180 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF21180R6
5
Freescale Semiconductor, Inc.
15
−45
Gps
10
−50
IM3
5
−55
ACPR
η
0
−60
10
1
50
−35
35
−40
30
−45
25
3rd Order
−50
20
5th Order
−55
15
η
−60
VDD = 28 Vdc, IDQ = 1700 mA
f1 = 2135 MHz, f2 = 2145 MHz
7th Order
−65
10
10
5
220
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency versus
Output Power
Figure 4. Intermodulation Distortion Products
versus Output Power
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
−35
IDQ = 1300 mA
−40
1500 mA
−45
2100 mA
VDD = 28 Vdc
f1 = 2135 MHz
f2 = 2145 MHz
1900 mA
1700 mA
−50
10
220
100
24
IRL
22
20
−9
η
−14
18
16
−29
−34
IM3
12
−39
Gps
ACPR
10
2090
2110
2130
2150
2170
Figure 5. Intermodulation Distortion versus
Output Power
Figure 6. 2 - Carrier W - CDMA Broadband
Performance
48
−44
2190
38
−25
η
Gps
37
40
11.5
32
11
24
10.5
16
VDD = 28 Vdc
IDQ = 1700 mA
f = 2140 MHz
η
9.5
MRF21180R6
6
−24
14
f, FREQUENCY (MHz)
1
−19
VDD = 28 Vdc, Pout = 38 W (Avg.)
IDQ = 1700 mA
f1 = f − 5 MHz, f2 = f + 5 MHz
2−Carrier W−CDMA, 10 MHz Carrier Spacing
3.84 MHz Channel Bandwidth
Each Carrier Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
Pout, OUTPUT POWER (WATTS) PEP
12.5
10
40
Pout, OUTPUT POWER (WATTS Avg.) W−CDMA
−30
12
−30
10
100
−26
IMD
36
−27
35
−28
34
−29
33
8
32
0
220
31
η, DRAIN EFFICIENCY (%)
−40
45
IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB)
20
−25
−30
Pout = 170 W (PEP)
IDQ = 1700 mA
f1 = 2135 MHz, f2 = 2145 MHz
−31
−32
24
25
26
27
28
29
Pout, OUTPUT POWER (WATTS)
VDD, DRAIN SUPPLY (V)
Figure 7. CW Performance
Figure 8. Two - Tone Intermodulation
Distortion and Drain Efficiency versus Drain
Supply
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IMD, INTERMODULATION DISTORTION (dBc)
−35
IM3 (dBc), ACPR (dBc)
25
IMD, INTERMODULATION DISTORTION (dBc)
−30
VDD = 28 Vdc, IDQ = 1700 mA
f1 = 2135 MHz, f2 = 2145 MHz
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF)
η, DRAIN EFFICIENCY (%)
η, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
30
−25
G ps , POWER GAIN (dB)
Freescale Semiconductor, Inc...
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
G ps , POWER GAIN (dB)
12.5
IDQ = 2100 mA
1900 mA
12.25
12
1700 mA
1500 mA
11.75
1300 mA
11.5
11.25
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
11
100
220
Pout, OUTPUT POWER (WATTS) PEP
−8
35
η
30
−13
IRL
25
20
−18
VDD = 28 Vdc
Pout = 170 W (PEP)
IDQ (ICQ) = 1700 mA
f1 = f − 5 MHz, f2 = f + 5 MHz
−23
15
−28
IMD
Gps
10
2090
2110
2130
2150
−33
2190
2170
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB),η, DRAIN EFFICIENCY (%)
Figure 9. Two-Tone Power Gain versus
Output Power
f, FREQUENCY (MHz)
Figure 10. Two-Tone Broadband Performance
−25
0
−30
3rd Order
−10
−35
VDD = 28 Vdc
Pout = 170 W (PEP)
IDQ = 1700 mA
f1 = 2140 MHz − Df/2, f2 = 2140 MHz + Df/2
−40
f1
3.84 MHz BW
f2
3.84 MHz BW
−20
−30
(dB)
IMD, INTERMODULATION DISTORTION (dBc)
Freescale Semiconductor, Inc...
10
−ACPR @
3.84 MHz BW
+ACPR @
3.84 MHz BW
−IM3 @
3.84 MHz BW
+IM3 @
3.84 MHz BW
−40
5th Order
−45
−50
7th Order
−50
−60
−55
0.1
1
10
20
−70
−20
−15
−10
−5
0
5
10
15
Df, TONE SEPARATION (MHz)
f, FREQUENCY (MHz)
Figure 11. Intermodulation Distortion
Products versus Two - Tone Spacing
Figure 12. 2-Carrier W-CDMA Spectrum
MOTOROLA RF DEVICE DATA
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20
MRF21180R6
7
Freescale Semiconductor, Inc.
f = 2170 MHz
Zsource
f = 2110 MHz
f = 2170 MHz
Freescale Semiconductor, Inc...
Zo = 5 Ω
Zload
f = 2110 MHz
VDD = 28 Vdc, IDQ = 2 X 850 mA, Pout = 38 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2110
2.45 + j2.08
2.65 + j1.52
2140
2.39 + j2.51
2.71 + j1.80
2170
2.16 + j3.14
2.64 + j2.04
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
−
−
Z
source
Output
Matching
Network
+
Z
load
Figure 13. Series Equivalent Input and Output Impedance
MRF21180R6
8
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NOTES
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MRF21180R6
9
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Freescale Semiconductor, Inc...
NOTES
MRF21180R6
10
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NOTES
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11
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PACKAGE DIMENSIONS
2X
A
bbb
G 4
1
2
3
4
T A
B
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.52 (38.61) BASED ON M3 SCREW.
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
aaa
bbb
ccc
B
(FLANGE)
4X
K
M
B
L
4X
Q
A
D
aaa
M
T A
M
B
M
ccc
M
T A
M
B
M
R
Freescale Semiconductor, Inc...
ccc
M
T A
M
B
(LID)
M
C
E
T
M
(INSULATOR)
M
T A
M
B
S
(INSULATOR)
PIN 5
bbb
F
H
N
(LID)
SEATING
PLANE
bbb
M
T A
M
B
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
CASE 375D - 04
ISSUE C
NI - 1230
M
INCHES
MIN
MAX
1.615
1.625
0.395
0.405
0.150
0.200
0.455
0.465
0.062
0.066
0.004
0.007
1.400 BSC
0.079
0.089
0.117
0.137
0.540 BSC
1.219
1.241
1.218
1.242
0.120
0.130
0.355
0.365
0.365
0.375
0.013 REF
0.010 REF
0.020 REF
MILLIMETERS
MIN
MAX
41.02
41.28
10.03
10.29
3.81
5.08
11.56
11.81
1.57
1.68
0.10
0.18
35.56 BSC
2.01
2.26
2.97
3.48
13.72 BSC
30.96
31.52
30.94
31.55
3.05
3.30
9.01
9.27
9.27
9.53
0.33 REF
0.25 REF
0.51 REF
DRAIN
DRAIN
GATE
GATE
SOURCE
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MRF21180R6
12
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MOTOROLA RF DEVICE MRF21180/D
DATA
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