ON M1MA151WKT1 Common cathode silicon dual switching diode Datasheet

M1MA151WKT1,
M1MA152WKT1,
SM1MA151WKT1G
Common Cathode Silicon
Dual Switching Diodes
These Common Cathode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SC−59 package which is designed for low
power surface mount applications.
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SC−59 PACKAGE SINGLE SILICON
SWITCHING DIODES 40 V/80 V 100 mA
SURFACE MOUNT
Features
•
•
•
•
•
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
SC−59
CASE 318D
STYLE 3
3 CATHODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
40
80
Vdc
40
80
Vdc
100
150
mAdc
225
340
mAdc
500
750
mAdc
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
M1MA151WKT1
°C
M1MA151WKT1G
SC−59 3,000/Tape & Reel
(Pb−Free)
SM1MA151WKT1G
SC−59 3,000/Tape & Reel
(Pb−Free)
Reverse Voltage
M1MA151WKT1, SM1MA151WKT1G
M1MA152WKT1
VR
Peak Reverse Voltage
M1MA151WKT1, SM1MA151WKT1G
M1MA152WKT1
VRM
Forward Current
Single
Dual
IF
Peak Forward Current
Single
Dual
Peak Forward Surge Current
Single
Dual
IFM
IFSM
(Note 1)
1
THERMAL CHARACTERISTICS
Rating
Storage Temperature
Tstg
−55 to + 150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 sec
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 11
1
ANODE 2
MARKING DIAGRAM
Mx M G
G
Mx = Device Code
x
=T for 151
U for 152
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
M1MA152WKT1
M1MA152WKT1G
Package
Shipping†
SC−59
3,000/Tape & Reel
SC−59
3,000/Tape & Reel
SC−59 3,000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
M1MA151WKT1/D
M1MA151WKT1, M1MA152WKT1, SM1MA151WKT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Reverse Voltage Leakage Current
M1MA151WKT1, SM1MA151WKT1G
M1MA152WKT1
IR
Condition
Min
Max
Unit
VR = 35 V
VR = 75 V
−
−
0.1
0.1
mAdc
IF = 100 mA
−
1.2
Vdc
IR = 100 mA
40
80
−
−
Vdc
Forward Voltage
VF
Reverse Breakdown Voltage
M1MA151WKT1, SM1MA151WKT1G
M1MA152WKT1
VR
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
−
2.0
pF
trr
(Note 2)
IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
−
3.0
ns
Reverse Recovery Time (Figure 1)
2. trr Test Circuit
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
t
A
10%
RL
Irr = 0.1 IR
90%
VR
tp = 2 ms
tr = 0.35 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
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2
IF = 10 mA
VR = 6 V
RL = 100 W
M1MA151WKT1, M1MA152WKT1, SM1MA151WKT1G
100
IR, REVERSE CURRENT (mA)
100
10
1
0.1
155°C
0
0.2
TA = −55°C
25°C
0.4
0.6
0.8
1
1.2
1
0.1
TA = 25°C
0.01
0.001
TA = −55°C
0.0001
0.00001
1.4
TA = 150°C
10
0
10
20
30
40
50
60
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Reverse Leakage
0.64
Cd, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1000
0.62
0.6
0.58
0.56
0.54
0.52
0.5
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)
Figure 4. Diode Capacitance
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3
7
8
70
80
M1MA151WKT1, M1MA152WKT1, SM1MA151WKT1G
PACKAGE DIMENSIONS
SC*59
CASE 318D*04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
E
2
b
e
L
A1
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
STYLE 3:
PIN 1. ANODE
2. ANODE
3. CATHODE
C
A
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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M1MA151WKT1/D
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