Diodes MMDT5401-7-F Dual pnp small signal surface mount transistor Datasheet

MMDT5401
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
A
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMDT5551)
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 3)
"Green" Device (Note 4 and 5)
•
•
•
•
•
•
•
B2
E2
C1
G
H
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed
over Alloy 42 leadframe).
Terminal Connections: See Diagram
Marking Information: K4M, See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.006 grams (approximate)
Maximum Ratings
E1
B C
Mechanical Data
•
•
SOT-363
B1
C2
K
M
J
D
F
L
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
—
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
α
0°
8°
All Dimensions in mm
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-160
V
Collector-Emitter Voltage
VCEO
-150
V
Emitter-Base Voltage
Collector Current – Continuous
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage and Temperature Range
Notes:
VEBO
-5.0
V
IC
-200
mA
(Note 1)
(Note 1,2)
(Note 1)
Pd
200
mW
RθJA
625
°C/W
Tj, TSTG
-55 to +150
°C
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. Maximum combined dissipation.
3. No purposefully added lead.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30169 Rev. 9 - 2
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MMDT5401
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
V(BR)CBO
-160
⎯
V
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-150
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -10μA, IC = 0
VCB = -120V, IE = 0
VCB = -120V, IE = 0, TA = 100°C
Collector Cutoff Current
ICBO
⎯
-50
nA
μA
Emitter Cutoff Current
IEBO
⎯
-50
nA
VEB = -3.0V, IC = 0
hFE
50
60
50
⎯
240
⎯
⎯
IC = -1.0mA, VCE = -5.0V
IC = -10mA, VCE = -5.0V
IC = -50mA, VCE = -5.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.2
-0.5
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
⎯
-1.0
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Cobo
⎯
6.0
pF
VCB = -10V, f = 1.0MHz, IE = 0
Small Signal Current Gain
hfe
40
200
⎯
VCE = -10V, IC = -1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product
fT
100
300
MHz
Noise Figure
NF
⎯
8.0
dB
ON CHARACTERISTICS (Note 6)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Notes:
VCE = -5.0V, IC = -200μA,
RS = 10Ω, f = 1.0kHz
6. Short duration pulse test used to minimize self-heating effect.
10.0
VCE(SAT), COLLECTOR TO EMITTER
SATURATION VOLTAGE (V)
200
PD, POWER DISSIPATION (mW)
VCE = -10V, IC = -10mA, f = 100MHz
150
100
50
IC
IB = 10
1.0
TA = 150°C
0.1
TA = -50°C
TA = 25°C
0
0
25
DS30169 Rev. 9 - 2
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
0.01
1
200
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10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Collector Emitter Saturation Voltage
vs. Collector Current
MMDT5401
© Diodes Incorporated
1.0
10,000
VBE(ON), BASE EMITTER VOLTAGE (V)
hFE, DC CURRENT GAIN
0.9
1,000
100
10
1
1
VCE = 5V
T A = -50°C
0.8
0.7
0.6
T A = 25°C
0.5
0.4
T A = 150°C
0.3
0.2
0.1
0.1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 3, DC Current Gain vs. Collector Current
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Base Emitter Voltage vs. Collector Current
1,000
ft, GAIN BANDWIDTH PRODUCT (MHz)
VCE = 10V
100
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 5, Gain Bandwidth Product vs Collector Current
1
Ordering Information
Notes:
7.
(Note 7)
Device
Packaging
Shipping
MMDT5401-7-F
SOT-363
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YM
Data Code Key
Year
Code
Month
Code
DS30169 Rev. 9 - 2
1998
J
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
K4M = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
YM
K4M
K4M
2002
N
Apr
4
2003
P
May
5
2004
R
2005
S
Jun
6
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2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
MMDT5401
© Diodes Incorporated
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30169 Rev. 9 - 2
4 of 4
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MMDT5401
© Diodes Incorporated
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