ON MMBFJ177LT1 Jfet chopper p-channel - depletion Datasheet

MMBFJ177LT1
JFET Chopper
P−Channel − Depletion
Features
• Pb−Free Package is Available
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2 SOURCE
MAXIMUM RATINGS
Rating
Drain−Gate Voltage
Reverse Gate−Source Voltage
Symbol
Value
Unit
VDG
25
Vdc
VGS(r)
−25
Vdc
3
GATE
1 DRAIN
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
SOT−23 (TO−236AB)
CASE 318−08
STYLE 10
THERMAL CHARACTERISTICS
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
1
2
MARKING DIAGRAM
6Y MG
G
1. FR−5 = 1.0 0.75 0.062 in.
1
6Y = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MMBFJ177LT1
SOT−23
3000 Tape & Reel
SOT−23
(Pb−Free)
3000 Tape & Reel
MMBFJ177LT1G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 3
1
Publication Order Number:
MMBFJ177LT1/D
MMBFJ177LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
V(BR)GSS
30
−
Vdc
IGSS
−
1.0
nAdc
VGS(off)
0.8
2.5
Vdc
Zero−Gate−Voltage Drain Current (VGS = 0, VDS = 15 Vdc) (Note 2)
IDSS
1.5
20
mAdc
Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc)
ID(off)
−
1.0
nAdc
rDS(on)
−
300
W
Ciss
−
11
pF
Crss
−
5.5
Characteristic
OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (VDS = 0, ID = 1.0 mAdc)
Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc)
Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc)
ON CHARACTERISTICS
Drain Source On Resistance (ID = 500 mAdc)
Input Capacitance
Reverse Transfer Capacitance
VDS = 0, VGS = 10 Vdc
f = 1.0 MHz
2. Pulse Test: Pulse Width < 300 ms, Duty Cycle ≤ 2%.
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2
MMBFJ177LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236AB)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MMBFJ177LT1/D
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